2SK3018WT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-323 Plastic-Encapsulate MOSFETS

WILLAS
1^S.0^OA S^TU^-R³F²AC³E^PM^lO^aU^sNT^tiS^cC^-H^EOⁿTT^cK^aY^pBA^sR^uR^lI^aER^teRE^MCT^OIFI^SER^FS^E-2^T0V^S- 200V
SOD-123+ PACKAGE
FM120-M+
2SK3018WTTH1RU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
N-chabentnteerlreMveOrsSeFleEaTkage current and thermal resistance.
• Low profile surface mounted application in order to
FEAT^oU^ptR^imE^izS^{e board space.}
z ^• L^Lo^oww^po^on^w-^er^re^ls^osis^st^,a^hn^igc^he^efficiency.
• High current capability, low forward voltage drop.
z • FHaigshtssuwrgietcchaipnagbisliptye. ed
z ^• L^Go^uw^ardv^roⁱⁿlt^ga^fg^ore^od^veri^rv^ve^oltm^aga^ek^pe^rs^oteth^ci^ts^iond^.evice ideal for portable equipment
• Ultra high-speed switching.
z _• E_Sia_lis_coily_{n e}d_pe_its_ai_xg_ian_le_pd_lad_nari_rv_ce_hic_pi_,r_mcu_etit_as_{l silicon junction.}
z ^• E^Lea^as^dy^-ft^ro^eep^pa^ar^ra^tsll^mel^{eet environmental standards of}
z _{• R}P^M_ob^I_H^L-^-_SF^S_pr^Te_r^D_oe_d^-1_up_c⁹_ta⁵_f⁰c_o⁰_rk_p^/a²_ag_c²_k⁸e_ini_gs_coa_dv_ea_si_ul_fa_fib_{x "}l_Ge_"
R^Hao^loH^geSⁿ p^frr^eo^ed^pu^roc^dt^ucfo^{t f}r^orp^pa^ac^ckⁱiⁿn^gg^coc^do^ed^se^uffs^ixu^"f^Hfi^"x ”G”
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
1. GATE
2. SOURCE
3. DRAIN
3
1 ^{0.012(0.3) Typ.}
2
0.071(1.8)
0.056(1.4)
M_He_ac_loh_ga_enn_fi_rc_ea_e l_pd_roa_dt_ua_{ct for packing code suffix “H”}
• Epoxy : UL94-V0 rated flame retardant
Marking: KN
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
MO_•S_TF_erE_mT_inM_alsA_:X_PlI_aM_teU_d M_terR_miA_naT_lI_sN_{, s}G_oS_lde(_rT_aa_bl=_{e p}2_e5_r°_MC_ILu_-Sn_Tle_Ds_-7s₅₀o^,therwise noted)
0.040(1.0)
0.024(0.6)
Equivalent circuit
0.031(0.8) Typ.
Symbol Para^Mm^ee^tt^he^or^{d 2026}
Value
Units
VDS^{• Polarit}D^y r^:a^Inin^d-^icS^ao^teu^drc^be^{y c}v^ao^tl^hta^og^dee ^band
VGS^•S ^MountGⁱⁿa^gt^Pe-^oS^so^itu^iorⁿce^{: A}Vⁿo^yltage
• Weight : Approximated 0.011 gram
ID
Continuous Drain Current
30
±20
0.1
V
Dimensions in inches and (millimeters)
V
A
PD
P^Mo^Aw^Xer^IMD^Uiss^Mip^Rat^Aio^Tn^{INGS AND ELECTRICAL CHA}0.^R2^ACTERIW^STICS
Rat_Tin_Jgs at 25℃_Ja_um_ncb_ti_ie_on_nt t_Te_em_mpe_pr_ea_rtu_ar_te_uru_enless otherwise specified.
150
Single phase half wave, 60Hz, resistive of inductive load.
℃
ForTcsatgpacitive loSatdo,rdaegreatTeecmurpreenrtabtuyr2e0%
-55-150
℃
RθJA
Therm^Ra^Al^TR^INe^Gsi^Sstance from Junctio^Sn^YMto^BOA^Lm^Fb^Mie¹²n⁰t^{-MH FM13}6⁰2^-M5^{H FM140-M}℃^{H F}/W^{M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH} UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Max_Mim_Oum_SR_Fe_Ecu_Trre_En_Lt P_Ee_Cak_TR_Rev_Ie_Crs_Ae _LVo_Clta_Hge_ARACTERV_IR_SRM_TICS(2_T0_a=25℃30_unles4_s0 _othe5_r0_{wise n}6_o0_ted) 80
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
Max^Pim^au^rm^amD^eC^teBl^rocking Voltage
Symbo_Vl_DC Test₂C₀onditi₃o₀n
40
50 ^M6ⁱⁿ0 ^Ty8^p0
Max^Oim^ffum^ChA^ave^rr^aa^cg^te^eF^ro^isrw^tia^cr^sd Rectified Current
IO
1.0
Drain-Source Breakdown Voltage
V(BR)DSS VGS = 0V, ID = 10µA
30
100
70
Ma₁x₀₀
150
105
Unit₁s₅₀
V
200 Volts
140 ^Volts
200 ^Volts
Amps
Pea_Zk _eFo_rorw_Gard_atS_eur_Vge_olC_taur_gre_ent_D8_r.3_aim_ns_Csi_ung_rrle_enha_tlf sine-wav_IDe_{SS IFSM VDS =30V,VGS = 0V}
superimposed on rated load (JEDEC method)
30
0.2
µA
Amps
Typ^Gica^al^tT^eh^–er^Sm^oa^ul ^rR^ce^esi^ls^eta^an^kc^ae^g(^eNo^ct^ue^r2^r)^ent
IGSS _RΘJA VGS =±20V, VDS = 0V
40
±500 nA
℃/W
Typ_Gica_al_tJ_eun_Tc_hti_ro_en_sC_ha_op_ldac_Vita_on_ltc_ae_g(_eNote 1)
VGS(th) ^CJ VDS = 3V, ID =100µA
0.8 ¹²⁰
1.5
V
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Stor_Dag_rae_iT_ne_-Sm_op_uer_ra_ct_eure_OR_na_-Rng_ee_sistance
RDS(on^T)^{STG VGS = 4V, ID =10mA}
- 65 to +175
8
Ω
℃
VGS =2.5V,ID =1mA
13
Ω
Forward Trans^Cc^Ho^An^Rd^Au^Cc^Tta^En^Rc^ISe^TICS
Maximum Forward Voltage at 1.0A DC
gFS^SYMBOV^L D^FS^M1=²3⁰V^-M,^HID^FM=¹³1⁰0^-Mm^HA^FM140-MH
VF
0.50
FM150-MH F₂M₀160-MH
0.70
FM180-MH FM1100-MH
0.85
F_mM_S1150-MH
0.9
FM1200-MH
0.92
UNIT
Volts
Max^Dim^yuⁿm^amAvⁱe^cra^Cge^haR^re^av^cer^ts^ee^riC^su^trⁱr^ce^sn^*t at @T A=25℃
IR
Rate_Ind_pD_uC_{t C}Bl_aoc_pk_ain_cg_itaV_nol_cta_ege
@T A=125℃_Ciss
0.5
10 ₁₃
pF
mAmps
NOTOESu:tput Capacitance
Coss
1- M_Rea_es_vur_ee_rd_sa_et 1_TM_raH_nZ_sa_fend_{r C}ap_ap_plie_ad_cr_ie_tave_nr_cse_evoltage of 4.0_CV_rsD_sC.
2- Thermal Resistance From Junction to Ambient
Switching Characteristics*
VDS =5V,VGS =0V,f =1MHz
9
pF
4
pF
Turn-On Delay Time
td(on)
15
ns
Rise Time
Turn-Off Delay Time
tr
td(off)
VGS =5V, VDD =5V,
ID =10mA, Rg=10Ω, RL=500Ω
35
ns
80
ns
Fall Time
tf
2012-06
*These parameters have no way to verify.
2012-0
80
ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.