2SK3018LT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOS FETS

WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SK3018LTT1HRU
FM1200-M+
Pb Free Product
N-ch_Fa_en_an_te_ul M_reO_sSFET
Package outline
• Batch process design, excellent power dissipation offers
FEA_• T_LbU_oewtR^tepE^rrroS^{efvileerssuerlfeaackeamgoeucnutrerdenatpapnlidc}
thermal resistan
ation in order to
ce.
z L^oo^ptw^imo^izn^e-^bre^oas^ri^dst^sa^pn^ac^ce^e.
z
•
•
F_HLoa_igws_ht^pcs^ouww_rrei_et^rnc^lth^ocsin_asp,g_ahs^ibgp_ihlie_teye_,ffd_{liocwiefnocryw. ard}
voltage
dr
op.
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z • LHoigwh svuorlgteagcaepdabriivlitey.makes this device ideal for portable equipment
z ^• E^Ga^uas^ri^dly^rind^ge^fs^oi^rg^on^ve^ed^rvod^lr^ti^av^ge^e c^pi^rr^oc^teu^cit^ts^ion.
• Ultra high-speed switching.
z _• E_Sia_lis_coy_nto_epp_ita_axra_ial_lle_pll_{anar chip, metal silicon junction.}
z ^• _P^Le_b^a_-^d_F^-_r^fr_e^e_e^e _p^pa_a^r_c^ts_k^m_ag^ee_e^t _i^e_s^nv_a^ir_v^o_aⁿ_i^m_la^e_bⁿ_l^t_e^{al standards of}
MIL-STD-19500 /228
• ^RRo^oH^HS^Spr^pod^rouc^dt^ufo^cr^tp^fa^oc^rki^pn^ag^cc^koⁱdⁿe^gsu^cf^ofix^d"^eG"^{suffix ”G”}
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
H^Haa^lolo^gg^enen^fref^ere^pe^rodp^ur^co^td^fou^rc^pt^af^co^krⁱⁿp^g a^coc^dk^ein^sg^uffc^ixo^"d^He^" suffix “H”
M_Me_ac_rkh_ina_gn_:i_Kc_Nal data
MO^•S^EF^pE^oT^xyM^{: U}A^LX⁹⁴IM^-VU^{0 r}M^ateR^dA^flT^amIN^eG^reS^ta(^rdT^aaⁿ=^t 25°C unless otherwise noted)
• Case : Molded plastic, SOD-123H
Symbol Parameter
V, alue
• Terminals :Plated terminals, solderable per MIL-STD-750
U⁰n^.0i³t¹s^{(0.8) Typ.}
Equivalen0.0t40c(1i.0r)cuit
0.024(0.6)
0.031(0.8) Typ.
VDS
DrainM-Seothuorcde2V02o6ltage
30
V
VGSS^{• Polari}G^tya^:t^Ieⁿ-^dSⁱo^cau^tr^ec^de ^bV^yo^clt^aa^tg^he^{ode band}
ID ^{• Mount}Cⁱⁿo^gn^Ptin^ou^sio^tiu^osⁿ D^{: A}raⁿi^yn Current
PD ^{• Weigh}P^t o^{: A}w^pe^pr^rD^oxis^imsip^aa^teti^don^{0.011 gram}
±20
0.1
0.35
V
Dimensions in inches and (millimeters)
A
W
TJ
JMunAcXtioIMn UTeMmRpeAraTtIuNreGS AND ELECTRICAL CH1A5R0ACTERIS℃TICS
Ra_Ttin_stg_gs at 25℃_Sa_tom_rabi_ge_ent_Tte_em_mp_pe_era_ratu_ture_reunless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For^Rc^θa^Jp^Aacitive lo^Ta^hd^e,^rd^me^ara^lt^Re ^ecu^sr^isre^tantⁿb^cy^e,20^J%^{unction-to-Ambient}
-55~+150
357
℃
℃ /W
Mar^Mkin^Og ^SCo^Fd^Ee ^T
ELEC^RAT^TR^INIC^GSAL
CHARACTER^SYI^MS^BT^OI^LC^FS^M(¹₁T²₂⁰a^-M=^H2^F5^M℃¹₁³₃⁰u^-Mn^Hl^Fe^Ms¹₁s⁴₄^0-o^Mt^Hh^Fe^M₁r¹w⁵₅^0-i^Ms^He^FMn₁¹o₆⁶⁰t^-e^Md^H )^FM1₁⁸₈^0-MH
FM1100-MH
10
FM1150-MH
115
FM1200-MH
120
UNIT
Max_Pim_au_rm_amR_eec_teur_rrent Peak Reverse Voltage
Max_Oim_fu_f m_ChR_aM_rS_acV_to_elt_ra_ig_se_tics
Max_Dim_raum_in-D_SC_oB_ul_ro_cc_ekin_Bg_reV_ao_klta_dg_oe_{wn Voltage}
Maximum Average Forward Rectified Current
Zero Gate Voltage Drain Current
Symbo^Vl^RRM Test²C⁰onditi³o⁰n
40
VRMS
14
21
28
VDS ^VDC VGS ²=⁰0V, ID ³=⁰10µA ⁴⁰
IO
IDSS
VDS =30V,VGS = 0V
50 _M6_in0 _Ty8_p0 _Ma1_x00 _Unit1_s50
35
42
56
70
105
50
3⁶0⁰
80
100
V¹⁵⁰
1.0
0.2
µA
200 Volts
140 ^Volts
200 ^Volts
Amps
Pea_Gk F_ao_tr_ewa_–r_Sd _oS_uur_rg_ce_eC_lu_er_are_kn_at 8_g._e3 m_cus _rs_rin_eg_nle_t half sine-wav_IGe_{SS IFSM VGS =±20V, VDS = 0V}
superimposed on rated load (JEDEC method)
30
±500 nA
Amps
Typ^Gica^al^tT^eh^Ter^hm^ra^el^sR^he^os^li^dsta^Vn^oc^le^ta(^gN^eote 2)
VGS(th_R) _ΘJA VDS = 3V, ID =100µA
0.8 ₄₀
1.5
V
℃/W
Typical Junction Capacitance (Note 1)
CJ _{VGS = 4V, ID = 10mA}
120
8
Ω
PF
Ope^Dra^rt^ainⁱⁿg ^-T^Se^om^up^re^cr^eatu^Ore^n-R^Ra^eng^se^istance
RDS(on) _TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG ^{VGS =2.5V,ID =1mA}
- 65 to +175
13
Ω
℃
Forward Transconductance
gFS
VDS =3V, ID = 10mA
20
mS
Dynamic Cha^Cr^Ha^Ac^Rte^Ar^Cis^Tt^Eic^Rs^IS*^TICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
Max^Iiⁿm^pu^um^t A^Cv^ae^pra^ag^ce^itR^aeⁿv^ce^erse Current at @T A=25℃ ^Ciss _IR
0.5 ¹³
pF
Rate_Od_uD_tpC_uB_tlo_Cc_aki_pn_ag_cV_ito_alt_na_cge_e
@T A=125℃_Coss
VDS =5V,VGS =0V,f =1MHz
10 ₉
pF
mAmps
NOTRESe:verse Transfer Capacitance
Crss
1- M_Sea_wsu_ir_te_cd_ha_it_n1_gM_CH_hZ_aa_rn_ad_ca_tp_ep_rlie_isd_tr_ie_cv_se_*rse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Turn-On Delay Time
td(on)
4
pF
15
ns
Rise Time
tr
VGS =5V, VDD =5V,
35
ns
Turn-Off Delay Time
td(off)
ID =10mA, Rg=10Ω, RL=500Ω,
80
ns
Fall Time
tf
* These parameters have no way to verify.
2012-06
80
ns
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.