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2SD999CK Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – (NPN) Plastic-Encapsulate Transistor | |||
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PRIMARY CHARACTERISTICS
PC
500mW
VCEO
25V
IC
1.0A
VCE(sat)
0.4V
hFE
200â400
TJ,Max
150â
FEATURES
ï¬ Low Collector-Emitter Saturation
Voltage
ï¬ Mini Power Type Package
ï¬ Excellent DC Current Gain Linearity
ï¬ Moisture Sensitivity Level 1
Ϯ^ϵϵϵ<
SOT-89 PACKAGE
1. BASE
2. COLLECTOR
3. EMITTER
MARKING CODE : CK
MECHANICAL DATA
ï¬ Caseï¼Molded plastic, SOT-89
ï¬ Polarityï¼As Above Marked
ï¬ Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
ï¬ Epoxy : UL94-V0 rated flame
retardant
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)*
hFE(2)*
Collector-emitter saturation voltage
VCE(sat)*
Base-emitter saturation voltage
VBE(sat)*
Base -emitter voltage
VBE*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=1V, IC=100mA
VCE=1V, IC=1A
IC=1A,IB=0.1A
IC=1A,IB=0.1A
VCE=6V, IC=10mA
VCE=6V,IC=10mA
VCB=6V, IE=0, f=1MHz
Min Typ
30
25
5
200
50
0.6
130
22
Max
0.1
0.1
400
0.4
1.2
0.7
Unit
V
V
V
µA
µA
V
V
V
MHz
pF
2015.01
www.willas.com.tw
Rev. J01
P1
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