2SD874 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SD874^THRU
FM1200-M+
Pb Free Product
Features
TR• ABNatSchISprToOceRss(dNePsiNgn), excellent power dissipation offers
Package outline
SOT-89
FE_• A_LboeT_wtU^tepR^rrroE^efviS_{leerssuerlfeaackeamgoeucnutrerdenatpapnlidcathtieornmianlorredseisr}
tance.
to
z ^opL^to^imw^izC^{e b}o^oll^ae^rc^dt^so^pr^a-E^cem^. itter Saturation Voltage
SOD-123H
z^{• Lo}L^wa^prg^oe^weC^{r l}o^ol^sle^s,c^hto^igr^hP^eo^ffiw^cie^enr ^cD^y.issipation
• High current capability, low forward voltage drop.
z• HiMghinsiuPrgoewcaepraTbyiliptye. Package
0.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
z^{• G}_P^ua_b^rd_-F^ri_rⁿ_e^g_e^fo_p^{r o}_a^v_c^e_k^r_a^vo_g^lt_e^ag_is^{e p}_a^r_v^o_a^te_i^c_la^tio_bⁿ_le^.
• Ultra high-speed switching.
• Si^Rlic^oo^Hn ^Sep^pit^ra^ox^dia^ul ^cp^tla^fn^oa^rr ^pc^ahi^cp^k, ⁱmⁿe^gta^cl^os^dili^eco^sn^uj^fu^fn^ixct^”i^Gon^”.
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
• Le_Ha_ad-_lofr_gee_enpa_fr_rt_es_em_pee_rot e_dn_uv_cir_to_fn_om_r e_pn_at_cal_ks_inta_gnd_ca_or_des o_sf_{uffix “H”}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MA^HX^aI^lM^ogU^enM^freR^eA^prT^oI^dN^ucG^{t f}S^or (^pT^ac_a^k=ⁱⁿ2^g5^c℃^odeu^sn^ul^fe^fixs^"s^H"otherwise noted)
Mechanical data
0.040(1.0)
•^SE^yp^mox^by^o:^l UL94-V0 rated flame ret^Pa^ard^ra^an^mt ^eter
Value
Unit
0.024(0.6)
• CVaCsBeO: MoldeCdopllleacsttoicr-,BSaOsDe-V1o2l3taHge
,
• TVer_Cm_EOinals :PClaotelledctteorrm-Einmailtste, sr oVlodletaragbele per MIL-STD-750
30
V
0.031(0.8) Typ.
25
V
0.031(0.8) Typ.
y _VEBO
M_Ee_mth_io_ttd_er2_-B02_a6_{se Voltage}
r ^{• Po}_I^l_C^{arity : Ind}_C^ic_o^a_ll^t_e^e_c^d_to^b_r^y _C^ca_u^t_r^h_re^o_n^d_t^{e band}
• Mounting Position : Any
P_C
Collector Power Dissipation
a _{• Weight : Approximated 0.011 gram}
R_θJA
Thermal Resistance From Junction To Ambient
5
V
1
Dimensio_Ans in inches and (millimeters)
500
mW
250
℃/W
in ^{Tj MAXJIMunUcMtionRTAeTmINpeGraStuAreND ELECTRICAL CHARACTER1I5S0TICS ℃}
Ratings at _T25_st℃_g ambie_Sn_tt_ot_re_am_gp_ee_Tra_et_mur_pe_eu_rn_al_te_us_rs_eotherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
-55~+150
℃
For capacitive load, derate current by 20%
lim ^{ELECTRICARLACTIHNGASRACTERISTICSSY(MTBaO=L25FM℃120u-MnHleFMs1s30o-MtHhFeMr1w40-iMsHeFMs1p5e0-cMHifFieMd16)0-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent P_Pe_aa_rk_aR_me_eve_ters_re Voltage
VRRM_Symb2_o0_l
T³⁰est con⁴d⁰itions⁵⁰
60 _Min80 _Typ 100 _Max 150 _Unit 200 Volts
Maximu_Cm_oR_llM_eS_ctV_oo_rl_-ta_bg_ae_{se breakdown voltage}
VRMS_V(BR)CB1_O4 _IC=2₁1_0µA,IE=2₀8
35
42 ₃₀ 56
70
105 _V 140
Volts
e Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
VDC
20
V_(BR)CEO
30
40
I_C=2mA,I_B=0
50
60
80
25
100
150
200
V
Volts
r _{Maximum Average Forward Rectified Current}
IO
1.0
Amps
Emitter-base breakdown voltage
V_(BR)EBO I_E=10µA,I_C=0
5
V
P ^{Peak Fo}_C^rw_o^a_l^r_l^d_e^S_c^u_t^r_o^g_r^{e C}_cu^ur_t^r_-^e_o^nt_ff^8._c³_u^m_r^s_re^si_n^ng_t^{le half sine-wave} IFSM _ICBO
V_CB=20V,I_E=0
30
0.1
µA
Amps
superimposed on rated load (JEDEC method)
Typical ^ETh^mer^itm^teal^rR^ce^usi^ts^-t^oa^fn^fce^cu(N^ro^reteⁿ2^t)
RΘJA ^IEBO
V_EB=4V,I_C=0
40
0.1
µA
℃/W
Typical Junction Capacitance (Note 1)
CJ hFE(1)
V_CE=10V, I_C=500mA
120 85
340
PF
Operatin^Dg^CTe^cm^up^re^reraⁿtu^tre^gaRⁱaⁿnge
TJ _hFE(2)
-_V55_CEto₌₅+_V12_, 5_IC=1A
50 ^{-55 to +150}
℃
Storage Temperature Range
TSTG
Collector-emitter saturation voltage
V_CE(sat)
I_C=500mA,I_B=50mA
- 65 to +175
0.4
V
℃
Base-emitCteHrAsRaAtCuTrEaRtiIoSnTICvSoltage
Maximu_Tm_raF_nor_sw_ia_tir_od _nVo_fl_rta_eg_qe_ua_et_n1_c.0_yA DC
Maximu_Cm_oA_llv_ee_cra_tg_oe_rR_oe_uv_te_prs_ue_tC_cu_arr_pe_an_ct a_itt_an@_cT_eA=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBO^VLBFEM(s1a2t)0-MH F^ICM⁼13⁵0⁰-M⁰H^mF^AM^,1^IB4⁼0-⁵M⁰H^mFM^A150-MH FM160-MH FM180-MH FM1100-MH^1.F²M1150-MH^VFM1200-MH UNIT
VF _fT
IR _Cob
VCE=10⁰V^.5,⁰IC=50mA, f=2⁰0^.0⁷M⁰ Hz
V_CB=10V, I_E=0, f=1MHz
0.5
10
0₂.8₀5₀
0.9 _MHz 0.92
20
pF
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Ther^Cma^Ll R^Ae^Ssis^Sta^In^Fce^ICFr^Aom^TIJ^Oun^Nctio^On t^Fo A^hm^Fb^Eie⁽¹n⁾ t
RANK
RANGE
MARKING
Q
85–170
ZQ
R
120–240
ZR
S
170–340
ZS
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.