2SD1898 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (80V, 1A)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
2SD1898
TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage and Current
z Excellent DC Current Gain Linearity
z _{Pb-Free package is available}
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
z Low Collector-Emitter Saturation Voltage
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
250
150
-55~+150
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ
V_(BR)CBO I_C=50µA,I_E=0
100
V_(BR)CEO I_C=1mA,I_B=0
80
V_(BR)EBO I_E=50µA,I_C=0
5
I_CBO
V_CB=80V,I_E=0
I_EBO
V_EB=4V,I_C=0
h_FE
V_CE=3V, I_C=500mA
82
V_CE(sat) I_C=500mA,I_B=20mA
f_T
VCE=10V,IC=50mA, f=100MHz
100
C_ob
V_CB=10V, I_E=0, f=1MHz
20
Max
1
1
390
0.4
Unit
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
P
82–180
Q
120–270
DF
R
180–390
2012-0
WILLAS ELECTRONIC CORP.