2SD1766 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (32V, 2A)

WILLAS
FM120-M+
2SD1766 ^THRU
SOT₁-_.8_0A9_SP_URla_FAs_Ct_Eic_M-_OE_UNn_Tc_Sa_Cp_HOs_Tu_TKla_Yt_Be_ART_Rr_IEa_Rn_Rs_Ei_Cs_Tt_IFo_IEr_Rs_{S -20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
TRANSIST_•O_BR_atc(_hN_pP_roN_c)_{ess design, excellent power dissipation offers}
FEATURES^{better reverse leakage current and thermal resistance.}
z Lo^•w^LoV^opwt_CimE^p_(irszoaeft)^ibl.^eV_osaC^ur_Edr(^f_s^as_apct)^e=_ac0^me.^o.1^u6ⁿV^te(^dT^ay^pp^p.)^li(^cI^a_C^t/ⁱI^o_Bⁿ=ⁱ2ⁿA^or/0^de.2^r A^to)
z _Pb^•_-F^Lo_r^w_ee^po_p^w_a^er_c^lo_k^s_a^s_g^{, h}_e^ig_i^h_s^e_a^ffi_v^ci_a^e_iⁿ_l^c_a^y_b^. _le
• High current capability, low forward voltage drop.
Ro_•H_HS_ighp_sr_uo_rd_geuc_cat_pf_ao_br_ilp_itya_. cking code suffix ”G”
Ha^•lo^Gg^ue^arn^drfⁱⁿre^ge^forp^or^vo^ed^rvu^oc^ltt^agfo^er^prp^oa^tec^ck^tii^onⁿg^. code suffix “H”
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MAXIMUM RMIALT-SINTDG-1S95(T00a=/22258℃ unless otherwise noted)
Symbol ^{• RHoaHloSgepnrofrdeue}P^cta_pfrr^ooa^rdm^puace^ctt^kfe_oinr_{rgpacockdiengsucfofidxe"Gsu"ff}V_ixa_"lu_He_"
Unit
V_CBO
M^Ce^ollc^ech^toa^r-n^Bi^ac^seal ^Vd^oa^ltat^ga^e
40
V
V_CEO
V_EBO
I_C
P_C
T_J
• CEoplolexcyto: Ur-EL9m4i-ttVe0r rVaoteltadgfleame retardant 32
V
• _EC_mas_ite_te:_rM_-Bo_al_sd_eed_Vp_ol_la_tas_gti_ec, SOD-123H
5
V
,
• _CTe_or_llm_ecin_toa_rls_C:P_urla_rete_nd_{t -}t_Cer_om_ni_tn_ina_uls_o,_us_solderable p₂er MIL-STD_A-750
Method 2026
•
Collector
Polarity :
dissipation
Indicated by
cathode
ba
nd
500
mW
• ^JM^uoⁿu^cn^tiotinⁿg^TP^emos^pit^eio^ran^tu: A^reny
150
℃
T_stg
• _SW_toe_ri_ag_gh_et :_TA_ep_mp_pro_ex_ri_am_tua_rt_eed 0.011 gram _-55-150
℃
Package outline
SOT-89
1. BASE
SOD-123H
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
ELECTRICAL CH^MA^AR^XA^IMC^UT^MER^RI^AS^TT^II^NC^GS^S(T^Aa^N=^D25^E℃^LEu^Cn^Tle^Rs^Is^CAo^Lth^Ce^Hrw^Ai^Rs^Ae^Cs^Tp^Ee^Rc^Ii^Sfi^Ted^IC)^S
Ratings at 25℃ ambient temperature unless otherwise specified.
Single p_Pha_as_re_amha_elf_tew_rave, 60Hz, resistive of indu_Sc_ytiv_me_blo_oa_ld.
For capacitive load, derate current by 20%
Test conditions
Min Typ Max Unit
Collector-base breakd^Ro^Aw^Tn^INv^Go^Sltage
Marking Code
CollMeacxtiomru-memReitctuerrrebnrt ePaekakdRoewvnersveoVltoaltgagee
Maximum RMS Voltage
Emi_Mtt_ae_xr_im-b_ua_ms_De_Cb_Bre_loa_ck_kid_ngow_Von_ltav_go_eltage
Coll^Me^ac^xtⁱo^mr^umcu^At^v-o^erf^af^gc^eu^Fr^or^re^wn^at^{rd Rectified Current}
V_(BR)C^S_B^Y_O^MBOI^L_C=^FM5¹0²Î¼⁰A^-M,^HI_E^F=^M0^{130-MH FM140-MH FM150-MH FM16}4^0-0^{MH FM180-MH FM1100-MH FM115}V^{0-MH FM1200-MH}
12
13
14
15
16
18
10
115 120
V_(BR)CV_EORRM I_C=1m20A, I_B=030
40
50
6032 80
100
15V0
200
VRMS
14
21
28
35
42
56
70
105
140
V_(BR)EBVODC I_E=50₂μ₀A, I_C=0₃₀
40
50
60 ⁵
80
100
15^V0
200
I_CBO ^IO V_CB=20V, I_E=0
1.0
1
μA
Emi^Pt^ete^akr ^Fc^ou^rwt-^ao^rdff^Sc^uru^gr^er^Ce^un^rt^{rent 8.3 ms single half sine-wav}I^eEBO IFSM VEB=4V, IC=0
superimposed on rated load (JEDEC method)
30
1
μA
DC ^Tc^yu^pr^icr^ae^ln^Tt^hg^era^min^{al Resistance (Note 2)}
Typical Junction Capacitance (Note 1)
CollOepcetroarti-negmTeitmteprersaatutruerRaatniogne voltage
Storage Temperature Range
h_FE(1^R₎ ^ΘJA V_CE=3V, I_C=500mA
CJ
V_CE(sat)TJ I_C=2A, I_B=0^-5.⁵2A^{to +125}
TSTG
8⁴2⁰
390
120
-55 to +₀1_.5₈0
V
- 65 to +175
Transition frequency
f_T
V_CE=5V, I_C=50mA, f=100MHz
100
MHz
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ColMleacxtiomrumouFtoprwuatrdcaVpoaltacgietaant c1e.0A DC
C_ob VF V_CB=10V, I_E=0, f=01.M50Hz
0.70
300.85
0.p9 F
0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
CLASSIFICATION OF h_FE(1)
NOTES:
Ra1n-kMeasured at 1 MHZ and applied reverse voltagePof 4.0 VDC.
0.5
10
Q
R
2- Thermal Resistance From Junction to Ambient
Range
82-180
120-270
180-390
Marking
DBP
DBQ
DBR
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.