2SC4672 Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor (50V, 2A)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SC4672 THRU
FM1200-M+
Pb Free Produc
TRANS_•^FIS_B^e_aT_t^aO_ch^tR^u_pr^r(_oN^e_ceP^s_sN_s )_{design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
FEATU_•R_LE_oS_{w profile surface mounted application in order to}
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z
• Low power loss, high efficiency.
Exc_• e_Hl_il_ge_hn_ct_uh_rFreEnC_{t c}h_aa_pr_aa_bc_ilt_ie_tyr_,i_ls_ot_wic_fs_{orward voltage drop.}
z Co^•m^Hp^igle^hm^sue^rn^gets^cath^pe^ab2^ilS^ityA^. 1797
z Pb^•-F^Gr^ue^ae^rdp^riaⁿc^gk^foa^rg^oe^veis^rva^olv^taa^gil^ea^pb^rl^oe^tection.
• Ultra high-speed switching.
Ro_•H_SS_ilip_coro_nd_eu_pc_itt_af_xo_iar_lp_pa_lac_nk_ain_r g_chc_ipo_,d_me_es_tau_lf_sfi_ix_lic"_oG_n"_junction.
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MAXIM_•U_R^MM_o^I_H^LR^-_S^SA_p^T_rT^D_od^-IN¹_uc⁹G_t⁵_f⁰_oS⁰_{r p}(^/2T_ac²_ak⁸=_in2_g5_c℃_odeu_sn_ufl_fe_ixs_"s_G"otherwise noted)
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M _VCBO ech_Ca_oln_lei_cc_toa_r-Bl _ad_sa_e t_Va_oltage
V_CEO^{• Epoxy}C^:o^Ull^Le⁹c⁴to^-r^V-⁰Em^rai^tt^ete^dr^fV^lao^mlt^eag^ree^tardant
V_EBO^{• Case} E^{: M}m^oit^lt^de^er-^dB^pa^lase^stiV^co^, l^Sta^Og^De^-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
I_C
Collector Current
Method 2026
P_{C• Polari}C_tyo_:ll_Ie_nc_dt_io_cr_aP_teo_dw_be_yr_cD_ai_ts_hs_oi_dpa_et_bio_an_nd
R_{θJA• Mount}T_inh_ger_Pm_oa_sl_itR_ioe_ns_:is_At_na_ynce From Junction To Ambient
T_j • WeighJtu:nAcptipornoxTiemmapteedra0t.u0r1e1 gram
Package outline
SOT-89
SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Value
Unit
60
V
50
V
0.040(1.0)
0.024(0.6)
6
V ^{0.031(0.8) Typ.}
0.031(0.8) Typ.
2
A
500
250
150
m_DW_{imensions in inches and (millimeters)}
℃/W
℃
T_stg
Storage Temperature
MAXIMUM RATINGS
AND
ELECTRICAL
CHAR^-5A^5~C⁺T¹E⁵R⁰ ISTICS^℃
Ratings at 25℃ ambient temperature unless otherwise specified.
EL_SiE_ngC_leT_pR_haIC_seA_hL_alfC_wH_avA_e,R₆₀A_HC_z,T_reE_sR_istI_iS_veT_oI_fC_inS_du(_cT_tivae=2_lo5_ad℃_. unless otherwise specified)
For capacitive load, derate current by 20%
Paramet_Re_Ar _TINGS
C_Mo_arl_kle_inc_gt_Co_or-_db_ease breakdown voltage
Symbol
Test conditions
Min Typ Max Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V_(BR)CBO I_C1=₂50µA,I_1E3=0
14
15
6₁0₆
18
10
V₁₁₅
120
C^Mo^axll^imec^ut^mo^Rr-^ee^cm^uri^rt^etⁿe^tr^Pb^eare^k a^Rk^ed^veo^rw^sen^Vv^olo^tal^gta^ege
V_(B^V_R^R_)C^R_E^M_O I_C²=⁰1mA,I_B³=⁰0
40
50 ₅6₀0
80
100
V¹⁵⁰
200
E^Mm^axiⁱt^mte^umr-b^Ra^Ms^Se^Vb^or^lte^aa^gekdown voltage
Maximum DC Blocking Voltage
Collector cut-off current
Maximum Average Forward Rectified Current
Emitter cut-off current
V_(B^V_R^R_)E^M_B^S_O I_E¹=⁴50µA,I²_C¹=0
28
35
6⁴²
56
70
V¹⁰⁵
140
I_C^V_B^D_O^C
V²_C⁰_B=60V,I³_E⁰=0 ⁴⁰
50
60
80
0.¹1⁰⁰
µA¹⁵⁰
200
IO
I_EBO
V_EB=5V,I_C=0
1.0
0.1
µA
D^PeC^akc^Fu^or^rwre^an^rdt^Sg^ua^rgi^en^{Current 8.3 ms single half sine-wave} h^IF^FE^SM
superimposed on rated load (JEDEC method)
C_Tyo_pl_il_ce_ac_{l T}to_her-_re_mm_ali_Rtt_ee_sr_iss_taa_nt_cu_er₍a_Nt_oio_ten₂₎voltage
V_{CRE(ΘsJaAt)}
V_CE=2V, I_C=500mA
I_C=1A,I_B=50mA
82 ³⁰
40
390
0.35
V
TryapincaslitJiuonnctiforneCqaupeancictaynce (Note 1)
C^Oo^pell^re^atcⁱⁿt^gor^Teo^mu^pt^ep^ru^att^uc^rea^Rp^aaⁿc^gi^etance
Storage Temperature Range
f_TCJ
C^T_ob^J
TSTG
VCE=2V,IC=0.5A, f=100MHz
V_CB=10^-5V⁵, I^to_E=⁺0¹,²f⁵=1MHz
120 210
25
- 65 to +175
MHz
-55 to +150 _pF
CLASSIFICATIO_CHN_ARO_AF_CTh_EFREISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Ave^Rra^Ag^Ne ^KReverse Current at @T A=^P25℃
Rated DC Blo_Rc_Aki_Nng_GV_Eoltage
@₈T₂A_–=1₁25₈℃₀
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
Q
R
0.5
120–270
180–390
10
NOTES: MARKING
DKP
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
DKQ
DKR
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.