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2SC4617 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT | |||
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WILLAS
SOT-523 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SCT4H61R7U
FM1200-M+
Pb Free Product
Features
⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TRâ¢ALNoSw IpSroTfOileRsu(rNfaPceNm) ounted application in order to
optimize board space.
⢠Low power loss, high efficiency.
FEA⢠HTiUghRcEuSrrent capability, low forward voltage drop.
⢠High surge capability.
z ⢠GLuoawrdrCingofbo:rCovoebrv=o2lt.a0gpeFp(rToytepc)tion.
z ⢠UCltoramhpiglhe-mspeenedt stowit2cShiAng1.774
⢠Silicon epitaxial planar chip, metal silicon junction.
z ⢠LMeaodi-sfrteuerpeaSrtsemneseitt ievnivtiyroLnmeevnetlal1standards of
MIL-STD-19500 /228
⢠RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
⢠Epoxy : UL94-V0 rated flame retardant
Package outline
SOT-523
SOD-123H
1.
BA00..S1143E60((33
.7)
.3)
2. EMITTER
3. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
⢠CSaysmeb:oMl olded plastic, SOD-123H
Parameter
,
VCBâ¢OTerminals :PlatedCtoelrlemcitnoar-lsB,assoeldVeoraltbalgeeper MIL-STD-750
Method 2026
VCEO
Collector-Emitter Voltage
⢠Polarity : Indicated by cathode band
VEBâ¢O
Mounting
Emitter-Base
Position : Any
Voltage
IC
â¢
Weight
:
Collector Current
Approximated 0.011 gram
-Continuous
0.031(0.8) Typ.
Value
60
Unit 0.031(0.8) Typ.
V
50
V
Dimensions in inches and (millimeters)
7
V
150
mA
PC
Collector Power Dissipation
150
mW
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
TJ
Junction Temperature
Ratings at 25â ambient temperature unless otherwise specified.
150
â
SingTlsetgphase half wave, 60SHtzo, rraegsiestTiveemopf ienrdautcutrivee load.
-55-150
â
For capacitive load, derate current by 20%
ELECTRICAL CHARACTERISTICS
RATINGS
(Ta=25â unless otherwise specified)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UNIT
Marking Code
Maximum RecurrenPt PaeraakmReetveerrse Voltage
12
13
14
15
16
VRRSMymbo2l0 Te3s0t cond4it0ions 50
60
18
10
80Min 10T0yp
115 120
1M5a0x 20U0nit Volts
MaximCuomllReMcStoVro-bltaagsee breakdown voltage
VRMVS(BR)CBO14 IC=5021uA, IE=028
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
5660
70
80
100
105
14V0
Volts
150
200 Volts
MaximCuomllAevcetroagre-eFmoriwttaerrd bRreectaifkieddoCwurnrevntoltage
IOV(BR)CEO IC=1mA, IB=0
1.0
50
V Amps
PsuepaekriFmEopmrwosiatertddeSornu-brrgaaetesCdeulorbraerdnet(aJ8E.k3DdmEoCswsminnegtvlheoohdla)talf gsiene-wave IFSVM (BR)EBO IE=50uA, IC=0
30
7
V Amps
TypicaCl Tohlleermctaol rRecsuistt-aonfcfec(uNrorteen2)t
Typical Junction Capacitance (Note 1)
OperaEtinmgiTtteemrpceuratt-uoreffRcaungrreent
Storage Temperature Range
RÎJA ICBO
CJ
TJ IEBO
TSTG
VCB=60V, IE=0
V-E5B5=7toV+, 1IC2=50
40
0.1
120
-55 to +150 0.1
- 65 to +175
μA â/W
PF
μA â
â
DC current gain
CHARACTERISTICS
MaximCumollFeocrwtoarrd-eVmolitattgeerast a1.t0uAraDtCion voltage
Maximum Average Reverse Current at @T A=25â
RatedTDrCanBsloictikoinng fVroeltqaugeency
@T A=125â
hFE
VCE=6V, IC=1mA
120
560
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF VCE(sat)
IR
fT
IC=50mA0,.5IB0=5mA
0.70
0.5
VCE=12V, IC=2mA, f=100MHz 10
0.85
00.9.4
180
0.V92 Volts
mAmps
MHz
NOTESC: ollector output capacitance
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- ThCermLaAl RSeSsisItFanIcCeAFrTomIOJuNnctOionFto hAmFEbient
Rank
Cob
Q
VCB=12V, IE=0, f=1MHz
R
3.5
pF
S
Range
120-270
180-390
270-560
Marking
BQ
BR
BS
2012-06
WILLAS ELECTRONIC CORP.
2013-12
WILLAS ELECTRONIC CORP.
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