2SC2881 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
2SC2881
TRANSISTOR (NPN)
SOT-89
FEATURES
z Small Flat Package
z High Transition Frequency
1. BASE
z High Voltage
z Pb-Free package is available
2. COLLECTOR
RoHS product for packing code suffix ”G”
3. EMITTER
Halogen free product for packing code suffix “H”
APPLICATIONS
z Power Amplifier and Voltage Amplifier
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
y _Symbol
r _VCBO
V_CEO
a _VEBO
in ^IC
P_C
R_θJA
T_j
lim ^Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
800
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
e _{ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)}
r _Parameter
P Collector-base breakdown voltage
Symbol
V_(BR)CBO
Test conditions
I_C=1mA,I_E=0
Min Typ
120
Max
Unit
V
Collector-emitter breakdown voltage
V_(BR)CEO I_C=10mA,I_B=0
120
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=1mA,I_C=0
5
V
Collector cut-off current
I_CBO
V_CB=120V,I_E=0
0.1
µA
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
0.1
µA
DC current gain
h_FE
V_CE=5V, I_C=100mA
80
240
Collector-emitter saturation voltage
V_CE(sat) I_C=500mA,I_B=50mA
1
V
Base-emitter voltage
V_BE
V_CE=5V, I_C=0.5A
1
V
Transition frequency
f_T
VCE=5V,IC=100mA
120
MHz
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
30
pF
CLASSIFICATION OF h_FE
RANK
O
RANGE
80–160
MARKING
CO1
2012-0
Y
120–240
CY1
WILLAS ELECTRONIC CORP.