2SC2412KXLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
2SC2412KxL^FT^M1_T¹_H²_R⁰_U^-M+
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
NPN Silicon
SOD-123+ PACKAGE
Pb Free Product
•
We declare that the material of product compliance with RoHS
P_•b^F-_BF^e_ar_t^ae_ce_h^t
u_par_ce_ks_{age is}
process desi
available
gn, excellent
pow
er
dissipatio
n
o
ffer
s
requiremPenatsc. kage
outline
RoHbeSttperrordeuvecrtsfeorlepaakcakginegcucrordenetsaunfdfixth”eGrm” al resistance.
H^•al^Lo^og^wen^prf^ore^fie^lep^sr^uo^rd^fau^cc^et ^mfo^or^upⁿa^tc^ek^din^ag^ppc^lo^icd^ae^tiosⁿufⁱfⁿix^o“^rH^de”^{r to}
2S^SC^OD2^-14²³1^H2KXLT1
optimize board space.
• Low power loss, high efficiency.
ORDE_• R_HI_igN_hG_cuIN_rrF_eO_ntR_cM_apA_aT_bI_iO_litN_{y, low forward voltage drop.}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
•^DG^evuⁱa^cr^edring for overvoltag^Me^ap^rkroⁱⁿte^gction.
Shipping
2^•S^UC2^lt4^ra12^hK^igQ^hL^-T^s1^{peed switchin}B^gQ^.
3000 Tape & Reel
• Silicon epitaxial planar chip, metal silicon junction.
2_•S_LC_e2_a4_d12_-fK_reR_eLT_p1_{arts meet env}B_irR_{onmental stand}3_a0_r0_d0_{s o}T_fape & Reel
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
2_•S_RC_o2_H41_S2_pK_rS_odL_uT_c1_{t for packing Gco1dFe suffix "G" 3000 Tape & Reel}
SOT– 23
Halogen free product for packing code suffix "H"
MAXIM^MU^eM^cR^hA^aTⁿINⁱG^cS^{al data}
• Epoxy : UL94-V0 rated flame retardant
Rating
Symbol Value
Unit
• Case : Molded plastic, SOD-123H
Co_•lle_Tc_eto_rmr–E_inm_ai_lt_ste_:r_PV_lao_tlt_ea_dge_termi
V
nals,
s^CEo^Ol
d
e
r
a
bl
50
e pe
r
V
,
MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3 ^{0.031(0.8) Typ.}
COLLECTOR
Collector–Base VMoletatgheod 2026 V CBO
60
V
Em^•itt^Pe^or–^laB^raⁱs^tye^:V^Ioⁿl^dtaⁱg^ce^{ated by catho}V^dE^eBO^band 7.0
V
1
Dimensions in inches and (millimeters)
BASE
Co^•lle^Mct^oo^ur C^ntuⁱⁿrr^gen^Pt ^o—^siC^tio^onⁿti^:n^Auoⁿu^ys I _C
150
Co^•lle^Wct^eor^{i g}p^ho^tw^:e^Ar ^pd^pis^rs^oip^xa^{i m}tio^an^{t e d}
0
.
0
11_P
gr
C
a
m
0.2
mAdc
W
2
EMITTER
Junction tem_Mpe_Ara_Xtu_IMre_{UM RATING}T_{Sj AND E}15_L0_ECTRIC°C_{AL CHARACTERISTICS}
RatinSgtosratg2e5t℃empaemrabtiuernet temperature uTn_sle_tgss ot-h5e5rw~is+e1s5p0ecifie°Cd.
S_Din_Eg_Vle_ICph_Eas_Me_Ah_Ral_Kf w_INa_Gve, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
2SC2412KQLT1_R=B_AQ_TINGS2SC2412KRLT1 =BR_SYMB2_OS_LC_F2_M4₁1₂2₀K_-MS_HLT_FM1₁=₃G_0-1_MF_{H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U}
M_Ear_Lk_Ein_Cg C_To_Rd_Ie_{CAL CHARACTERISTICS (TA = 25°C unless othe}1_rw2 _{ise note}1_d3_.)
14
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage ^{Characteristic}
VRRM
VRMS
20
30
40
1^S4^ymbol 21 ^Min28
Maxim^Cu^om^lleD^cC^toB^r–lo^Ec^mkiⁱn^ttg^erV^Bol^rt^ea^ag^ke^{down Voltage}
(I_C = 1 mA)
Maxim_Eu_mm_itA_tev_re_–r_Ba_age_seF_Bor_rw_eaar_kd_doR_wec_nti_Vfie_od_ltaC_gu_errent
VDC
IO
2^V0 (BR)CEO 30 ⁵⁰ 40
V _(BR)EBO
7
Peak F^(IoEr⁼wa⁵rd⁰S^µu^Arg⁾e Current 8.3 ms single half sine-wave _IFSM
superim^Copo^lls^ee^cd^too^rn^–Bra^ate^sd^el^Boa^red^a(J^kE^dD^oE^wCⁿ m^Voet^lth^ao^gd^e)
V _(BR)CBO
60
Typica^(Il^CT⁼her⁵m⁰a^µl R^Ae⁾ sistance (Note 2)
RΘJA
Typica^Cl ^oJ^lu^len^cc^tt^oio^rn^CC^ua^top^fa^fc^Cit^uan^rrc^ee^nt(Note 1)
CJ
I _CBO
—
Opera⁽t^Vin^Cg^B T⁼em⁶⁰pe^Vra⁾ ture Range
TJ
-55 to +125
Storag^Ee^mT^ite^tm^erp^ce^ura^totu^ffre^cuR^ra^renⁿg^te
TSTG
I _EBO
—
(V_EB = 7 V)
15
50
Ty₃p₅
—₅₀
—
—
—
—
16
18
10
115
60
80
100
150
M₄a₂x
Un₅it₆
70
105
—₆₀
V₈₀
100
150
1.0
—
V
30
—
V
40
0.1 ¹²⁰ µA
0^- .⁶1^{5 to +1}µ⁷A⁵
-55 to +150
120
200 V
140 ^V
200 ^V
A
A
℃
Collector-emit_Cte_Hr_As_Rat_Au_Cra_Tti_Eo_Rn_Iv_So_Tl_It_Cag_Se
Maxim⁽u^ICm^{/ I}FB o⁼rw⁵ar⁰d^mV^Aolt^/ag⁵e^mat^A1⁾.0A DC
SYMBOL FM120V-M_CH_E(sF_atM₎ 130-MH —FM140-MH FM—150-MH FM01.460-MH FMV180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
Maxim^Du^Cm^cA^uv^re^reraⁿg^te^traRⁿe^sv^fe^er^rs^re^aC^tiourrent at @T A=25℃
Rated⁽D^VC^CEB⁼loc⁶k^Vin^,g^IV^Co⁼lt¹a^mge^A)
@T A=125℃
IR
h _FE
120
––
560 _0.5 ––
10
m
Transition frequency
NOTES_(V: _{CE = 12 V, I E= – 2mA, f =30MHz )}
f_T
—
180
––
MHz
1- Mea_Osu_ur_te_pd_ua_tt_c1_apM_aH_cZ_itaa_nnd_ceapplied reverse voltage of 4.0 VDC.
2- Ther₍m_Va_Cl_BR₌es₁is₂ta_Vnc_,e_I F_E=rom_0AJ_,u_fn₌ct₁io_Mn _Hto_zA₎mbient
C _ob
—
2.0
3.5
pF
h _FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.