2SC1766 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN)

WILLAS
SO_1.0T_A-_S8_U9_RFP_ACl_Eas_MOti_Uc_N-_TE_Sn_CHc_Oa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IET_Rr_Ra_En_CTs_IFi_Is_ERto_S r_-2s_{0V- 200V}
SOD-123+ PACKAGE
FM120-M+
2SC1766 ^THRU
FM1200-M
Pb Free Produc
TRANSIS^FT^eO^aR^tu(N^reP^sN)
• Batch process design, excellent power dissipation offers
FEATUR^bE^eS^{tter reverse leakage current and thermal resistance.}
z
Pb-^•F^Lr^oe^we ^pp^ra^oc^fik^lea^sg^ue^rfais^cea^mva^oi^ulⁿa^tb^el^de^{application in order to}
optimize board space.
RoH• SLopwropdowucetr lfoosrsp, ahcigkhinegfficcoiednecys. uffix ”G”
Hal^•og^He^ign^h f^cr^ue^re^repⁿr^to^cd^au^pc^at^bf^ilo^itr^y,p^la^owck^fi^on^rg^wac^ro^dd^ve^ols^tau^gff^eix^d“^rH^op”^.
z Sm^••a_GHll^iugF_ahl_ra_dst_ruirP_ngga^efc_ock^ar a^poag_vebe_{rilvitoyl.tage protection.}
z Hig•hUSltrpaeheigdhS-swpeitecdhsinwgitcThiinmge.
z Low^{• S}C^ilo^icl^oleⁿc^et^poⁱr^ta-e^xim^ali^ptt^le^ar^nas^ra^ct^huⁱr^pa^, t^mio^en^talv^so^illⁱt^ca^ogⁿe^junction.
• Lead-free parts meet environmental standards of
APPLICAMTILIO-SNTDS-19500 /228
z Pow^{• R}e^or^HA^Sm^prp^ol^dif^ui^ce^tr^{for packing code suffix "G"}
Halogen free product for packing code suffix "H"
Package outline
SOT-89 _SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
MAXIM_•U_EM_poR_xyA_:T_UI_LN₉G_4-S_V0(_rT_aate=_d2_f5_la℃_meu_rn_etl_ae_rs_ds_ano_t therwise noted)
0.040(1.0)
0.024(0.6)
Symb•oCl ase : Molded plastic, SOPDa-r1a2m3Heter
,
y _{VCBO• TerminCaollsle:cPtloart-eBdatseermVionlatalsg,esolderable per MIL-STD-750}
Value Unit _{0.031(0.8) Typ.}
50
V
0.031(0.8) Typ.
r _VCEO
Collec^Mto^er^th-E^om^{d 2}itt⁰e²r⁶Voltage
V_EBO^{• Polari}E^tym^: i^Itⁿte^drⁱ-^cB^aa^tes^de ^bV^yo^clt^aa^tg^he^{ode band}
a _{• Mounting Position : Any}
I_C
Collector Current
• Weight : Approximated 0.011 gram
in ^PC
Collector Power Dissipation
50
5
2
500
V
D_Vimensions in inches and (millimeters)
A
mW
R_θJA
T^Mhe^Ar^Xm^Ia^Ml R^Ue^Msis^Rta^An^Tc^Ie^NF^Gro^Sm^AJ^Nun^Dct^Eio^Ln^ET^Co^TA^Rm^Ib^Cie^An^Lt ^CHARA2^C5^T0^ERISTIC℃^S/W
Ratin_Tg_js at 25℃_Jua_nm_cb_tii_oen_nt_Tte_em_mp_pe_era_ratu_ture_reunless otherwise specified.
150
℃
Single phase half wave, 60Hz, resistive of inductive load.
For^Tc^sa^tp^gacitive l^Soa^tod^r,^ad^ge^era^Tte^emcu^prr^ee^rn^at^tb^uy^re20%
-55~+150
℃
lim ^RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
EL^MaE^rkCⁱⁿT^gR^CoIC^deAL CHARACTERISTICS (T_a=25℃ unle¹s²s oth¹e³rwise ¹s⁴pecifi¹e⁵d) ¹⁶
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
e _{Maximum RMPSaVraolmtageeter}
r _{CMoalxliemcutmorD-CbaBsloeckbinrgeaVkoldtaogwe n voltage}
P ^{CMoalxliemcutmorA-veemraigteteFrobrwraeradkRdeoctwifinedvCoulrtraegnte}
Sym^VRb^Mo^Sl
V_(BR^V_)C^D_B^C_O
V_(BR)^I_C^O_EO
1_T4_{est co}2_n1_ditions28
I_C²=⁰100µA,³I⁰_E=0 ⁴⁰
I_C=1mA,I_B=0
35 _Min42 _Typ 56 _Max 70 _Unit 105
140
50 ₅₀60
80
100 _V 150
200
50 ^1.0
V
E^Pm^eai^ktt^Fe^or^rw-b^ara^ds^Se^urb^gere^Ca^uk^rrd^eno^tw^8.3n^mv^so^slⁱtⁿa^gg^lee^{half sine-wave}V(BRIF)ESBMO
superimposed on rated load (JEDEC method)
Collector cut-off current
Typical Thermal Resistance (Note 2)
I_CRBΘOJA
E_Tm_ypi_ictt_ae_l r_Juc_nu_ctt_i-_oo_nf_Cf _ac_pu_ar_cr_ite_an_nct_{e (Note 1)}
I_EBCOJ
Operating Temperature Range
D_SC_torc_agu_err_Te_en_mt_pg_era_ai_tn_{ure Range}
h_FET₍₁J₎
h_F^T_E^S₍₂^T₎*^G
I_E=100µA,I_C=0
V_CB=50V,I_E=0
V_EB=5V,I_C=0
V_CE=2V^-5, ⁵I_C^t=^o0⁺.¹5²A⁵
V_CE=2V, I_C=2A
5 30
40
120
70
20^{- 65 to +175}
V
0.1
µA
0.1
µA
2^-4⁵0^{5 to +150}
Collector-emitte_Cr _Hs_Aa_Rtu_Ar_Ca_Tti_Eo_Rn_ISv_To_IClt_Sage
V_{SCYE(MsaBt)OL FM}I_C1=₂₀1_-MA_H,I_BF=_M5₁₃0₀m_-MA_{H FM140-MH FM150-MH FM160-MH FM180-M}0_H._F5_M1100-MHV_{FM1150-MH FM1200-MH}
BMaasxiem-uemmFitotrewrarsdaVtuolrtaagteioant 1v.0oAltDagCe
V_BEV_(sF_at) I_C=1A,I_B=50mA0.50
0.70
01.8.25
V 0.9
0.92
T^Mr^aa^xn^ims^uit^mio^An^vefr^rae^gq^eu^Re^en^vc^ey^{rse Current at @T A=25℃}
f_TIR
Rated DC Blocking Voltage
@T A=125℃
VCE=2V,IC=0.5A,f=100MHz
0.₁5₂₀
10
MHz
C_NL_OA_TES_SS_: IFICATION OF h_FE(1)
1- Measu_Rre_Ad_Nat_K1 MHZ and applied reverse vo_Pltage of 4.0 VDC.
2- Therm_Ra_Al R_Ne_Gsis_Etance From Junction to A₈m_2–bie₁nt₈₀
Q
120–270
Y
180–390
MARKING
P1766
Q1766
Y1766
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.