2SC1623XLT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
2SC1623xL^FT^M_T1¹_H²_R⁰_U^-M+
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
We^• d^Le^oc^wla^pre^owth^ea^rt^lt^oh^se^s,m^ha^igte^hri^ea^fl^fo^icf^ieprⁿo^cd^yu^. ct compliance with RoHS requirements.
• High current capability, low forward voltage drop.
Pb_•-F_Hr_ie_ge_h
package is available
surge capability.
Ro_•H_GS_up_ar_ro_dd_riu_nc_gt_ff_oo_rr_op_va_ec_rk_vi_on_lg_tac_go_ed_pe_ros_tu_ef_cf_tix_io”_nG_. ”
0.146(3.7)
0.130(3.3)
Ha•loUgletrna fhreigeh-psrpoedeudctswfoirtcphaincgki.ng code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MA_•X_R^MI_o^IM_H^L-_SU^S_p^TM_r^D_od^-1_uR_c⁹A_t⁵_f⁰_oT⁰_rI_pN^/2_aG_c²_k⁸S_{ing code suffix "G"}
HalogenRfraeteinpgroduct for packing coSdyemsubfofixl "H" Value
Unit
SOT– 23
Col^Mlec^eto^cr-E^hm^aitⁿteⁱr^cV^aol^lta^dge^ata
V_CEO
50
Col^•le^Ect^po^or-^xB^ya^:s^Ue^LV⁹⁴o^-lt^Va⁰ge^{rated flame retar}V^d_C^a_Bⁿ_O^t
60
• Case : Molded plastic, SOD-123H
Emitter-Base Voltage
V_EBO
7_,
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector curren_Mt-c_eo_thn_oti_dnu₂o₀u₂n₆
I_C
150
TH_•E_PR_oM_larA_ityL_: C_InH_dicA_aR_teA_{d b}T_yE_cE_atR_hoIS_deT_bIC_anS_d
• Mounting PosCitihoanr:aAcnteyristic
Symbol
V
V
V
0.031(0.8) Typ.
mAdc
1
BASE
0.040(1.0)
30.024(0.6)
COLLECTOR
0.031(0.8) Typ.
Max
Dimensions in inches and (millimet₂ers)
Unit
EMITTER
Tota_• l_WD_ee_iv_gi_hc_te_:D_Ai_ps_ps_rip_oa_xit_mio_an_tF_edR₀-5_.0B₁o₁a_gr_rd_a,_m(1)
P_D
T_A=25^oC _{MAXIMUM RATINGS AND ELECTRICAL CHARA}2_C2_T5_ERISTICm_SW
Rat^Din^egs^raa^tet 2^a5^b℃^ova^em²b⁵ie^oCnt temperature unless otherwise specified.
1.8
mW/^oC
Sing^Tl^he^ep^rh^ma^ase^{l R}ha^el^sf ⁱw^sta^avⁿe^c, ^e6^,0H^Juzⁿ, r^ce^tis^oisⁿtiv^toe ^Aof^min^bdⁱu^ecⁿt^tive load.
R θJA
556
o_C/W
For_Tc_oa_tp_aa_lc_Diti_eve_viclo_ead_D,_id_se_sr_ipa_ate_tic_ou_nrrent by 20%
P_D
Alumina Substra^Rte^A, ^T(2^IN)^GT^SA=25 ^oC
Marking Code
Maxi^Dm^eu^rm^atR^ee^acu^br^ore^vn^et
P²e⁵a^ok^CReverse
Voltage
Maxi^Tm^hu^em^rmRM^alS^RV^eo^sltⁱa^sg^tae^{nce, Junction to Ambient}
Maxi^Jm^uuⁿm^ctD^ioCⁿB^aloⁿc^dki^Sng^toV^ro^al^gta^ege^Temperature
Maxi^Dmu^Em^VA^Iv^Cer^Eage^MFo^Arw^Rar^Kd ^IR^Nec^Gtified Current
SYMBOL FM120-MH FM130-MH₃₀F₀M140-MH FM15_m0-_WMH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VRRM
VRMS
12
20
R₁₄θJA
13
14
30 ^2.4 40
21 ⁴¹⁷28
m₅₁₀₅W/^oC
16
60
3^oC5 ^/W 42
18
10
115 120
80
100
150
200 Vo
56
70
105
140 ^Vo
VDC ^Tj 2^,T0^stg 3^-0^{55 to +}4¹0⁵⁰ 50^oC
60
80
100
150
200 ^Vo
IO
1.0
Am
Peak
For²w^Sar^Cd ¹S⁶ur²g³e^QCu^Lr^Tre¹n⁼t 8^L.⁵3
ms
single^2Sha^Clf ¹si⁶n²e-³w^Rav^Le^T1
=L6
IFSM
2SC1623SLT1=L7
30
Am
super_Eim_Lpo_Ese_Cd_Ton_Rra_ICted_Alo_Lad_C(J_HED_AEC_Rm_Ae_Ctho_Td)_{ERISTICS (TA=25oC unless otherwise noted)}
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (No^Cte^ha1)^racteristic
CJ
Symbol
Min
120^Typ
Max
Unit
P
OperOatiFngFTCemHpAerRatAurCe RTaEnRgeISTICS
TJ
-55 to +125
-55 to +150
℃
Stora_Cg_oe_lT_lee_cm_top_rer_Cat_uu_tr_oe_fR_f a_Cn_ug_re_{rent (VCB=60V)}
TSTG
I _CBO
- ^{- 65 to +}-¹⁷⁵
0.1
µA
℃
Emitter Cutoff Current (VBE=5V)
CHARACTERISTICS
I _EBO
0.1
µA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.