2SB766A Datasheet, PDF (1/2 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SB766A ^THRU
FM1200-M+
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
TRANSIS_•T_LO_oR_w (_pP_roN_fiP_le)_{surface mounted application in order to}
SOD-123H
optimize board space.
FEATURE^• S^{Low power loss, high efficiency.}
z Large^•• _HHc_io^iggl_hhle_scc_uut_rro_grer_enp_{ct a}o^cpaw_ape_bair^bliid_tlyii^t.s^y,s^li^op^wa^ft^oio^rwn^aP^rd_C^{voltage drop.}
z Pb-F•reGeuaprdarcinkgafogreoviesrvaovltaagileapbrloetection.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
RoHS^{• U}p^ltr^ro^ad^hu^igc^ht^-sfo^per^ep^da^sc^wk^iti^cn^hgⁱⁿc^go^. de suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halog• eLenafdr-efreeeppraordtsumcet efot ernpvairocnkminegntcaol sdtaendsaurfdfisxo“fH”
SOT-89
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
MAXIMUM• ^RR^oHA^ST^pI^rN^odG^ucS^{t f}(^oT^{r p}a=^ac2^k5ⁱⁿ℃^{g co}u^dn^el^se^us^ffs^{ix "}o^Gt^"herwise noted)
Halogen free product for packing code suffix "H"
1. BASE
Symbol MechanPicaraalmdetaerta
Value
Unit
V_CBO
V_CEO
y _VEBO
I_C
r _PC
• E_Cp_oo_lx_ley_c:_toU_rL_-B94_a-_sV_e0_Vr_oa_lt_te_ad_geflame retardant_-60
V
• C_Ca_os_le_le:_cM_too_r-ld_Ee_md_itp_tela_rs_Vti_oc_l,_taS_gO_eD-123H _-50
V
,
• T_Ee_mrm_iti_tn_ea_r-ls_Ba:P_sl_eat_Ve_od_ltt_ae_grm_einals, solderable_-p₅er MIL-STD_V-750
Method 2026
Collector Current -Continuous
-1
A
• Polarity : Indicated by cathode band
• M^Co^ou^lln^et^cin^tog^rP^Po^os^wit^eio^rn^D:ⁱA^ssnⁱy^pation
500
mW
2. COLLECTOR
0.031(03.8.)ETyMp. ITTER
1
2
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a _TJ
• W^Jueⁿig^ch^tit^o:ⁿA^Tp^ep^mro^px^eim^raa^tt^ue^rd^e 0.011 gram ¹⁵⁰
℃
in ^Tstg
Storage Temperature
MAXIMUM RATINGS
AND^-5E^5~L¹E⁵C⁰TRICA^℃L
CHARACTERISTICS
ELEC^RT^aR^tinIC^gsA^aL^{t 2}C^5℃HA^amR^bA^ieC^ntT^teE^mR^peIS^raT^tuI^rC^e S^unl(^eT^sa^s=^o2^th5^e℃^rwisu^en^sl^pe^es^cis^fieo^d.therwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
For cap_Pa_ac_rit_aiv_me _elo_ta_ed_r, derate current by 20% _Symbol
Test conditions
Min Typ Max Unit
lim Collector-base breakdoRwAnTIvNoGltSage
Marking Code
Colle_Mc_at_xo_imr-_ue_mm_Rit_et_ce_ur_rrb_er_ne_t a_Pk_ead_ko_Rw_en_vev_rso_elt_Va_og_lte_age
V= _(BR)CB^S_O^YMBOIc^L=^F-1^M0¹²Î¼⁰A^-M,I^H_E ^FM0^{130-MH FM140-MH FM150-MH F}-^M6¹0^{60-MH FM180-MH FM1100-MH FM}V^{1150-MH FM1200-MH}
12
13
14
15
16
18
10
115 120
= V_(BR)CEVORRMIc=-2m₂₀A,I_B 0 ₃₀
40
50 ^-56⁰0
80
100
V₁₅₀
200
e _{EmitMtearx-ibmausmeRbMrSeaVkodltaogwe n voltage}
= V_(BR)EBV_ORMSI_E=-101μ4A,I_C 021
28
35
-542
56
70
V105
140
r _{ColleMcatxoimr ucmutD-oCffBlcouckrirnegnVtoltage}
= I_CBO ^VDC V_CB=-2²⁰0V,I_E 0³⁰
40
50
60
80 _-01_.0₁0 _μA150
200
P ^{EmitMtearxicmuutm-oAffvecruagrereFnotrward Rectified Current= IEBO IO VEB=-4V,IC 0}
1.0
-0.1 μA
DC
Peak Forward Surge Current 8.3 ms single half
c_su_ur_pr_ee_rin_mt_pog_sa_edin_{on rated load (JEDEC method)}
sine-w_hav_Fe_{E(1) I= FSMVCE=-10V,IC -500mA}
= h_FE(2) V_CE=-5V,I_C -1A
85 ₃₀
340
50
Typical Thermal Resistance (Note 2)
RΘJA
40
Colle_Tc_yt_po_icr_a-_le_Jm_uni_ctt_tie_or_n s_Ca_at_pu_ar_ca_itati_no_cn_{e (}v_No_ol_teta₁g₎e
V_{CE(sat) C}= _J I_C=-500mA,I_B -50mA
120 -0.2
-0.4
V
Base^O-e^pem^rait^titⁿe^gr^Ts^ea^mt^pu^er^ra^at^tuio^ren^Rv^ao^nglt^eage
Storage Temperature Range
Transition frequency
V_BE(sat) ^T= ^J I_C=-500mA,^-I⁵_B⁵ -^to50⁺m¹²A⁵
TSTG
f_T
V_CE=-= 10V,I_C -5= 0mA,f 200MHz
-0.85 ^-55-^t1^o.2⁺¹⁵⁰ V
- 65 to +175
200
MHz
Collector output cap^Ca^Hc^Ait^Ra^An^Cc^Te^ERISTICS
Maximum Forward Voltage at 1.0A DC
C_ob^SY= ^MBOV= ^L_CB^F=^M-¹1²0^0-V^M,^HI_E^FM0¹,³f^0-1^MM^H H^FMz^{140-MH FM150-MH FM160-MH FM}2¹0^{80-MH FM}3¹¹0^{00-MH FM}p¹F^{150-MH FM1200-MH}
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
CLA_RS_atS_edIF_DI_CC_BA_loT_ckIO_ingN_VoO_ltaF_geh_FE(1)
@T A=125℃
IR
0.5
10
Rank_NOTES:
Q
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Range
2- Thermal
Resistance
From
Junction
to
Ambi⁸e⁵nt^-170
R
120-240
S
170-340
MAKING
BQ
BR
BS
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.