2SB766 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

WILLAS
SOT-8_1.9_0AP_SUla_Rs_FAt_Cic_E -_ME_On_UNc_Ta_Sp_Cs_HOu_Tl_Ta_Kt_Ye_BAT_Rr_Ra_IEn_Rs_Ri_Es_Ct_To_IFr_Is_{ERS -20V- 200V}
SOD-123+ PACKAGE
FM120-M
2SB766 ^THRU
FM1200-M
Pb Free Prod
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TRANSISTO^•R^Loop(P^wtimN^pirP_zoe)^{fibleosaurdrfaspceacmeo. unted application in order to}
FEATURES • Low power loss, high efficiency.
z Large c^•o^Hlle^igc^hto^cur^rp^reoⁿw^{t c}e^ar^pd^abis^ils^iti^yp^, a^lot^wio^fn^orP^w_C^{ard voltage drop.}
z Pb-Free^{• H}pa^igc^hk^sa^ug^rge^e i^cs^apa^av^ba^iliⁱl^ta^y.ble
• Guardring for overvoltage protection.
RoHS p•roUdlturacthifgohr-pspaecekdinsgwictcohdinegs. uffix ”G”
Halogen^{• S}frⁱe^lie^copⁿr^eo^pd^itu^ac^xt^iaf^lo^pr^lapⁿa^ac^rk^ci^hnⁱg^p,c^mo^ed^te^al s^siu^lif^cf^oixⁿ“^jH^un”^ction.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MAXIMUM R_•A_R^MT_o^I_H^LIN^-_S^SG_p^T_rS^D_od^-1(_uT_c⁹_t⁵a_f=⁰_o⁰_r2_p5^/2_a℃_c²_k⁸_inu_gn_cl_oe_ds_es_suo_fft_ixh_"e_Gr_"wise noted)
SOT-89
Symbol
Halogen fre_Pe_ap_raro_mdu_ec_tt_ef_ror packing code su_Vff_aix_lu"H_e" _Unit
Mechanical data
1. BASE
V_CBO
Collector-Base Voltage
-30
V
0.040(1.0)
V_CEO
V_EBO
y _IC
• Epoxy : UL94-V0 rated flame retardant
C_{• C}ol_ale_sc_eto_: r_M-E_om_ldi_ett_de_pr
Voltage
lastic, SOD
-1
23H
-25
V
E_• m_Teit_rt_mer_in-B_aa_lss_:e_PV_lao_telta_dg_tee_{rminals, solderable}-_p5_{er MIL-ST}V_D-750,
Collector Cu^Mrren^tht^o-^dCo²⁰n²tin⁶uous
-1
A
2. COLLECTOR
0.031(0.8) Typ.
3. EMITTER
0.024(0.6)
0.031(0.8) Typ.
P_C
C^{• P}ol^ole^lac^rtⁱo^tyr P^{: I}oⁿw^die^cr^aD^tei^dss^bip^ya^ct^aio^thn^{ode band} 500
mW
Dimensions in inches and (millimeters)
r _TJ
J^• u^Mn^oc^utiⁿo^tnⁱⁿT^ge^Pm^op^se^itrⁱa^otⁿur^:e^Any
150
℃
a _Tstg
S^• t^Wor^eaⁱg^ge^htT^:e^Am^ppp^re^or^xaⁱt^mur^ae^{ted 0.011 gram} -55~150
℃
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
ELECT_RR_aI_tC_ingA_sL_atC₂₅H_℃AR_amA_bC_ieT_ntE_teR_mI_pS_eT_raI_tC_urS_{e u}(_nT_lea_s=_s2_o5_th℃_erwu_isn_el_se_ps_es_cifo_iedth_. erwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
For c^Pap^aa^rc^ai^mtiv^ee^tl^eo^rad, derate current by 20% ^Symbol
Test conditions
Min Typ Max Unit
lim Collector-base breakdowRnAvToINltGaSge
Marking Code
Collec_Mto_ar_x-_imem_umit_Rte_er_cub_rr_ree_na_tk_Pd_eo_akw_Rn_evv_eo_rslt_ea_Vg_oe_ltage
V_(BR)CBO^SYMI^B_C^O=^L-1^FM0μ¹²A^0-,^MI^H_E=^F0^{M130-MH FM140-MH FM150-MH FM}-3¹0^{60-MH FM180-MH FM1100-MH FM}V^{1150-MH FM1200}
12
13
14
15
16
V_{(BR)CEO VRR}I_CM =-2m₂A₀, I_B=0 ₃₀
40
50
-2₆5₀
18
10
115 120
80
100
V₁₅₀
200
Emitte^Mr-^ab^xa^ims^ue^mb^Rr^Mea^Sk^Vd^oo^ltaw^gn^e voltage
e _{Maximum DC Blocking Voltage}
V_(BR)EBO ^VRMI_E^S=-10μ¹A⁴, I_C=0 ²¹
28
35
-⁴5²
VDC
20
30
40
50
60
56
70
V¹⁰⁵
140
80
100
150
200
r _{CollecMtoarximcuumt-oAfvfecraugrereFnortward Rectified Current ICBO IOVCB=-20V, IE=0}
1.0
-0.1 μA
P ^{EmittePrecakuFt-oorwffarcduSrurregenCt urrent 8.3 ms single half sine-wI}E^aB^vO^e _IFS^V_MEB^{=-4V, I}C⁼⁰
30
-0.1 μA
superimposed on rated load (JEDEC method)
DC cu^Trr^ye^pin^cat ^lg^Ta^hi^en^{rmal Resistance (Note 2)}
h_{FE(1) RΘ}V_JACE=-10V, I_C=-500mA
85 ₄₀
340
Typical Junction Capacitance (Note 1)
Operating Temperature Range
h_FE(2) ^CJV_CE=-5V, I_C=-1A
TJ
-55 to +125
50 ¹²⁰
-55 to +150
CollecStotorr-aegme TitetmerpesraattuureraRtaionngevoltage
V_CE(sat) TSTIG_C=-500mA, I_B=-50mA
- 65 to +1-705.2 -0.4
V
Base-emitter saturatio_Cn_HAv_Ro_Alt_Ca_Tg_Ee_RISTICS
V_BE(sat)SYMI_BCO=_L-5_F0_M0₁m₂₀A_-M,_HI_BF=_M-₁5₃0_0-m_MHA_{FM140-MH FM150-MH FM160-MH F}-_M0₁.₈8₀5_{-MH FM}-₁1₁.₀2_{0-MH FM1}V_{150-MH FM1200}
Transi^Mti^ao^xn^imf^ur^meq^Fu^oe^rwn^ac^rdy^{Voltage at 1.0A DC}
f_T ^VFV_CE=-10V, I_C=-50mA⁰,^.5f=⁰200MHz ^0.70
200 ^0.85
MH^0.z⁹
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
CollecRtoatredouDtCpBultocckainpgaVcoilttaangece
@T A=125C℃_ob
V_CB=-10V, I_E=0, f=1MHz
10 20
30
pF
NOTES:
CLASS^1-I^MF^eI^aC^suA^reT^dI^aO^{t 1}N^MHO^ZF^andh^a_F^p_E^p₍^l₁^ie₎^{d reverse voltage of 4.0 VDC.}
2- Thermal Resistance From Junction to Ambient
Rank
Q
R
S
Range
85-170
120-240
170-340
Marking
AQ
AR
AS
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.