2SB1440 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

WILLAS
SO_1.0T_A-_S8_U9_RFP_ACla_Es_Mt_Oi_Uc_N-_TE_Sn_Cc_HOa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IET_Rr_Ra_En_CTs_IFis_IEt_Ro_Sr_-2s_{0V- 200V}
SOD-123+ PACKAGE
FM120-M+
2SB1440 ^THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
TRANSIS^beT^tO^teR^{r re}(^vP^eN^rsP^e )^{leakage current and thermal resistance.}
FEATU^•R^LoE^opS^{wtimpirzoefibleosaurdrfaspceacmeo. unted application in order to}
z Lo• wLocwoplloewcetrolro-sesm, hitigtehresffaictiuernactyi.on voltage V_CE(sat)
z Fo^• r^Hlⁱo^ghw^c-^ufr^re^reqⁿu^t e^can^pc^ay^bio^liu^tyt^,p^lou^wt a^fom^rwp^al^rif^dic^va^olt^ti^ao^gn^{e drop.}
• High surge capability.
z Pb_• -_GF_ur_ae_re_drip_na_g c_fok_ra_og_vee_rvis_olta_av_geai_pl_ra_ob_tele_ction.
Package outline
SOD-123H
SOT-89
1. BASE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
R^•oH^UlS^trap^hrⁱo^gd^h-u^sc^pt^ef^eo^dr^sp^wa^itc^ck^hiⁱn^ngg^. code suffix ”G”
H_••a_LSlo_eilg_aice_do-n^nfrf_eer_epe^ipe^taaxp_ritar_so^lmpd^leu^aec^ntat_erf_no^cvhr_irip^po,a_nmmck^eeti_nn^atlg_aslic_slio_tcaod_nne_djaus_rnu_dcsf^tfⁱi_oox_fn“^.H”
MAXIM_•U_R^MM_o^I_H^L-_SR^S_pA^T_r^DT_od^-I¹_uN_c⁹G_t⁵_f⁰_oS⁰_{r p}^/(²_aT_c²a_k⁸=_in2_g5_c℃_odeu_sn_ufl_fe_ixs_"s_G"otherwise noted)
Symbol ^HP^aa^lr^oa^{gen free product for}m^pe^acte^kir^{ng code suffix "H"}
Mechanical data
V_CBO
Collector-Base Voltage
• Epoxy : UL94-V0 rated flame retardant
Value
-50
Unit
V
V_{CEO • Cas}C_eo_:l_Mle_oc_lt_do_er-_dE_pm_lait_ste_tir_cV_{, S}o_Olta_Dg_-e_123H
-50
V
V_{EBO • Term}E_im_nait_lt_ser_:-_PB_laa_ts_ee_dV_teo_rl_mta_ig_ne_{als, solderable per MIL-S}-5_TD-750, V
2. COLLECTOR
3. EMITTER
1
2
3
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
I_C
Collecto^Mr^eC^thu^orr^de²n⁰t ²-C⁶ ontinuous
-2
A
P_C
• Pola_Cr_oit_ly_le:_cI_tn_od_ric_Pa_ot_wed_erby_Dc_isa_st_ih_po_ad_tie_onband
T_J
• Mou_Jn_ut_nin_cg_tioP_nos_Ti_eti_mon_pe: A_ran_ty_ure
T_stg
• Wei_Sg_th_ot_r:_aA_gp_ep_Tr_eo_mxim_pea_rt_ae_td_ur0_e.011 gram
500
mW
150
℃
-55~150
℃
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
E_RL_aE_tiC_ngT_sR_atIC₂₅A_℃L_aC_mH_biA_enR_{t t}A_emC_pT_erE_atR_urI_eS_uT_nI_leC_sS_{s o}(_thT_ea_r=_w2_is5_e℃_speu_cin_fiele_d.ss otherwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitiv^Pe^alo^raad^m, ^ed^te^era^rte current by 20%
Symbol
Test conditions
Min Typ Max Unit
Collector-base bre^Rak^Ad^To^INw^Gn^S voltage
Marking Code
V^S_(B^Y_R^M_)C^B_B^O_O^L
FM_I1_C12₌₂0_--M₁H_0μFM_A1_1,3_3I0_E-₌M₀H
FM140-MH
14
FM150-MH
15
FM160-MH_-5F₀M180-MH
16
18
FM1100-MH
10
FM1150-MH_VFM1200-MH
115 120
UN
M_Ca_ox_li_lm_eu_cm_toR_r-e_ec_murr_ie_ttn_et _rPe_ba_rk_eR_akev_de_ors_we_nVo_vlt_oa_lg_te_age
= V₍^V_B^R_R^R_)C^M_EO I_C²=⁰-1mA,³I⁰_B 0 ⁴⁰
50
60 _-50 80
100
150 _V 200
Vol
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Vol
M_Ea_mxi_im_ttu_em_r-D_bC_asB_elo_bck_ri_eng_akV_dol_ota_wge_{n voltage}
V_(BV_RD₎C_EBO I_E²=⁰-10μA³, ⁰I_C=0 ⁴⁰
50
60 _-5 80
100
150 _V 200 ^Vol
Maximum Average Forward Rectified Current
IO
Collector cut-off current
= I_CBO V_CB=-50V, I_E 0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
s_Eu_mpe_ir_tim_tep_ros_ce_ud_to_-n_or_fa_fte_cd_ulo_rra_ed_n(J_tEDEC method)
= I_EBO V_EB=-5V, I_C 0
Typical Thermal Resistance (Note 2)
RΘJA
1.0
Am
-1
μA
30
Am
-1
μA
40
℃/W
Typical Junction Capacitance (Note 1)
h^C_FE^J ₁
V_CE=-2= V, I_C -200mA
120₁₂₀
340
PF
ODpCercatuinrgreTnemt gpearianture Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
ThS_FT_EG₂ V_CE== -2V, I_C -1A
- 65 to +₆1₀75
℃
Collector-emitteCrHsAaRtAuCraTtEioRInSTvIoClStage
Maximum Forward Voltage at 1.0A DC
= VSY_CM_E(B_saO_t)L FMI1_C2=0--M1HAF, MI_B130--5M0HmFAM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH-0F.M31150-MHVFM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vol
M^Ba^ax^sim^eu^- m^emAvⁱe^ttr^eag^re^sR^ae^tuve^rr^as^te^ioCⁿur^vre^on^lt^ta^at^ge@T A=25℃ ^{= V}BE_IR(sat) ^IC^{=-1A, I}B ^-50mA
0.5
Rated DC Blocking Voltage
@T A=125℃
10
Transition frequency
f_T
V_CE=-1= 0V, I_C 50= mA, f 200MHz
NOTES:
-1..2
V
mAm
80
MHz
1_C- M_oe_lla_es_cur_te_od_ra_ot 1_uM_tpH_uZ_ta_cn_ad_pa_app_cli_ie_td_anre_cve_erse voltage of 4.0 VDC_C. _ob
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h _FE1
V_CB=-10V, I_E=0, f=1MHz
60
pF
Rank
R
S
Range
120-240
170-340
Marking
2012-06
2012-0
1L
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.