2SB1386 Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor(-20V,-5A)

WILLAS
S₁O_.0AT_S-8_UR9_FAP_Cl_Ea_Ms_Ot_Uic_NT-E_SCn_Hc_Oa_TTp_Ks_Yu_BAla_Rt_Re_IERT_Rra_ECn_Ts_IFi_IEs_Rt_So_-r₂s_{0V- 200V}
SOD-123+ PACKAGE
FM120-M+
2SB1386 ^THRU
FM1200-M+
Pb Free Product
Features
TRANSI^•S^BT^aO^tcR^{h p}(^rP^ocN^eP^ss) ^{design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
FEATUR^{• L}E_oopS^{wtimpirzoefibleosaurdrfaspcea}
moun
ce.
ted
ap
plicati
on
in
order
to
z Low^{• L}c^oo^wlle^poc^wto^er^r s^loa^st^su^, r^ha^igti^ho^en^ffv^ico^ieltⁿa^cg^y.e
z Exe^•c^Hllⁱe^gn^h t^cuc^ru^rerrⁿe^t n^cat-^pto^ab-g^ilia^tyi^,n^loc^wh^fa^or^ra^wc^at^re^dr^vis^ot^lti^ac^gs^{e drop.}
• High surge capability.
z _{Pb-•FGreuearpdraincgkfaogr oeviesrvaovltaagileapbrloetection.}
Package outline
SOT-89 ^SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
RoH^• S^Ultp^raro^hd^igu^hc^-t^spfo^er^edpa^swck^iti^cn^hgⁱⁿc^go^. de suffix ”G”
Hal_••og_LSee^ilain^cdof_-nr_fre_eee_ep
i_pta_rx_oi_dal_up_cla_t n_foa_rr c_ph_aip_c,_km_ine_gta_cl _osi_dli_eco_sn_uju_ffn_ixct_“io_Hn_”.
parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MAXIMU_HM_aloR_geA_nT_frI_eN_e G_prS_odu(T_cta_f=_or2_p5_a℃_ckinu_gn_cl_oe_ds_es_suo_ffit_xh_"e_Hr_"wise noted)
2. COLLECTOR
3. EMITTER
Symbol^MechanPⁱa^cra^am^l e^dte^ar^ta
Value
Unit
V_CBO ^{• E}_C^po_o^x_ll^y_ec^: _t^U_o^L_r-⁹_B⁴_a^-_s^V_e⁰ _V^ra_o^t_l^e_ta^d_g^f_e^{lame retardant}
-30
V
• Case : Molded plastic, SOD-123H
V_CEO
Collector-Emitter Voltage
-20
,
• Terminals :Plated terminals, solderable per MIL-STD-750
V
V_EBO
Emitter-Ba_Ms_ee_thV_oo_dlt₂a₀g₂e₆
-6
V
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
I_C
• PColoanrittinyu: oInudsicCaotelldecbtyorcaCtuhrordeentband
-5
A
I_CP* ^{• M}P^ou^ulⁿs^teⁱⁿd^gC^Po^ol^sle^itc^iotoⁿr ^:C^Auⁿr^yrent
-10
A
P_C
• W_Ce_oig_llh_et_c:_toA_rp_Pp_oro_wx_eim_r a_Dt_ie_sd_si0_p._a0_t1_io1_ngram
0.5
W
Dimensions in inches and (millimeters)
T_J
Junct_Mion_AXTe_IMmp_Ue_Mrat_Rur_Ae_{TINGS AND ELEC}1_T5_R0_{ICAL CHAR}℃_ACTERISTICS
T_sR_tgatings atS2t5o℃ragaemTbeiemntpteermaptuerreature unless otherwise-s5p5e~c1ifi5e0d.
℃
*S^Sinⁱⁿg^gle^lep^pu^hl^as^se^e,P^hW^al=^f 1^w0^am^ves^{, 60Hz, resistive of inductive load.}
For capacitive load, derate current by 20%
ELECTRICAL CHA_RR_ATA_INC_GT_SERISTICS (Ta=2_S5_Y℃_MBOu_Ln_Fl_Me₁s₂₀s_-Mo_Ht_Fh_Me₁₃r₀w_-Mi_Hs_Fe_M1s₄p_0-e_Mc_H i_Ff_Mie₁₅d_0-)_{MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN}
Marking Code
Maximum RePcaurrraemnt ePteeark Reverse Voltage
12
13
14
15
16
18
10
115 120
SymVRbRoMl 2T0est co3n0ditions40
50
60 Min 80 Typ 100 Max 150Unit 200 Vo
Maximum RMS Voltage
C_Mo_al_xle_imc_ut_mor_D-b_Ca_Bs_le_ocb_kir_ne_ga_Vk_od_ltao_gw_en voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Vo
V_(BRV)DCCBO I_C=₂₀-50μA,I_3E0=0
40
50
60 ^-30 80
100
150 ^V 200
Vo
C^Mo^al^xle^imc^ut^mor^A-e^vem^rait^gt^ee^Fr ^ob^rwre^aa^rdk^Rd^eo^cw^tifn^iedv^Co^ult^ra^regⁿe^t
V_(BR)^I_C^O_EO I_C=-1mA,I_B=0
1.0_-20
V
Am
Peak Forward Surge Current 8.3 ms single half
E_sm_upi_et_rt_ie_mr_p-_ob_sa_edse_onb_rar_te_ea_d k_lod_adow_(JEn_Dv_Eo_Cl_mta_eg_the_od)
sine-wave_V(BRIF)ESBMO
I_E=-50μA,I_C=0
30_-6
V
Am
C^To^ypllⁱe^cac^lt^To^hr^ec^rmu^at-^l o^Rf^ef^sc^isu^tarⁿr^ce^en⁽t^{Note 2)}
Typical Junction Capacitance (Note 1)
E^Om^peit^rt^ae^tir^ngcu^Tet-^mo^pf^ef^rc^atu^ur^rere^Rn^at^nge
Storage Temperature Range
DC current gain
I_C^R_B^Θ_O^JA
CJ
I_EB^T_O^J
TSTG
h_FE
V_CB=-20V,I_E=0
V_EB=-5V^-5,I⁵_C=^to0⁺¹²⁵
V_CE=-2V,I_C=-500mA
40
-0.5
μA
℃
120
P
-55 to +15_-0_0.5
μA
℃
- 65 to +175
℃
82
390
CHARACTERISTICS
C_Mo_al_xle_imc_ut_mor_F-e_orm_wait_rt_de_Vr_os_lta_agtu_er_aa_tt₁io_.0n_A v_Do_Cltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
V_CEV(sFat) I_C=-4A,I_B=-100₀m_.5A₀
0.70
0.85
-1 _0.9 V _{0.92 Vo}
Maximum Average Reverse Current at @T A=25℃
T_Rra_atn_es_d i_Dti_Con_Blofr_ce_kiq_ngue_Vn_olc_tay_ge
@T A=125℃
f_T^IR
V_CE=-6V,I_C=-50mA,f=30MHz
0.5
10
120
MHz
mA
C_No_Ol_Tl_Ee_Sc_:tor output capacitance
C_ob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h_FE
V_CB=-20V,I_E=0,f=1MHz
60
pF
Rank
P
Q
R
Range
82-180
120-270
180-390
Mar₂k₀in₁g_2-06
BHP
BHQ
WILLAS ^BE^HL^RECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.