2SB1308 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-50V, -3A)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SB1308 ^THRU
FM1200-M+
Pb Free Product
TRANS^FIS^eT^aO^tR^ur(P^eN^sP)
• Batch process design, excellent power dissipation offers
FEATUR^bE^etS^{ter reverse leakage current and thermal resistance.}
z Po^•w^Loe^opr^wtimT^pir^rzoa_efn^ibls^eoi^ss_aurto_drfr^{aspceacmeo. unted application in order to}
z Ex^•c^Le^oll^wen^pot ^wD^eC^{r lo}c^su^sr^,r^heⁱn^ght G^effa^icin^iency.
z Lo^•w^HC^igo^h l^cle^uc^rrt^eoⁿr^t-^ce^am^pait^bte^ilir^tyS^{, l}a^ot^wu^fr^oa^rt^wio^an^rdV^voo^ll^tt^aa^gg^ee^drop.
• High surge capability.
z Pb•-GFuraeredripngafcokr oavgeervoilstaagevparioltaebctlioen.
Ro^••H_SUS_illtircap_ohnrⁱo^gehd_p-iu_tsapc_xet_iaef_ldo_psr_lawp_nitaa^crhc_cik^nhi^gin_p.,g_mc_eo_tad_{l s}e_ilis_cou_nff_ji_ux_nc”_tG_io”_n.
Ha^•lo^Leg^ae^dn^-frefr^ee^pe^arp^tsro^md^eeu^tc^et^nvfo^irr^onp^ma^ecⁿk^tain^{l s}g^tac^ndo^ad^re^dss^ou^f ffix “H”
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Package outline
SOT-89
SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
MAXIM•UEMpoxRyA: UTLIN94G-VS0 (rTat_ae=d2f5la℃meurentlaerdsasntotherwise noted)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
Symbol
Parameter
,
• Terminals :Plated terminals, solderable per MIL-STD-750
V_CBO
Colle_Mc_eto_thr-_oB_da₂s₀e₂V₆oltage
V_{CE•OPolarit}C_y o_{: I}ll_ne_dc_it_co_ar-_teE_dm_bit_yte_cr_aV_tho_olt_da_eg_be_and
Value Unit ^{0.031(0.8) Typ.}
0.031(0.8) Typ.
-30
V
-20
D^Vimensions in inches and (millimeters)
V_EB•_OMountiEnmg Pittoesri-tBioanse: AVnoyltage
-6
V
I_C• WeightC:oAllpepcrtooxriCmuartreedn0t .011 gram
-3
A
P_C
C_Mo_All_Xec_IMtor_UP_Mow_Re_Ar _TD_Ii_Nss_Gip_Sati_Aon_{ND ELECTRICAL CHARAC}50_T0_ERISTICSmW
Rati^Rng^θs^JAat 25℃ ^Ta^hm^eb^rmien^at^l t^Rem^espⁱe^sr^ta^atⁿur^ce^eu^Fn^rle^os^ms o^Jt^uhⁿe^crw^tii^osⁿe ^Tsp^oe^Aci^mfie^bdⁱ.^ent
250
℃/W
SingleTpj hase haJlfuwnacvtieo,n60THezm, preesriastiuvreeof inductive load.
150
℃
For c_Ta_sp_tgacitive lo_Sa_td_o,_rd_ae_gr_eat_Te_ec_mur_pre_en_rt_ab_tuy_r2_e0%
-55~+150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
E_ML_axE_imC_uT_mR_RMIC_SA_VL_oltaC_geHARACTERISTICS (T_a=_V2_R5_M℃_S unl₁e₄ss oth₂₁erwise₂₈speci₃f₅ied) ₄₂
18
10
115 120
80
100
150
200 V
56
70
105
140 ^V
Maximum DC Blocking Voltage
Maximum Aver^Pag^ae^raF^morw^eta^erd^r Rectified Current
VDC
Sy_Im_O bol
Collector-base breakdown voltage
V_(BR)CBO
Peak Forward Surge Current 8.3 ms single half sine-wave
su^Cp^oer^li^lm^ep^co^ts^oe^rd^-eon^mra^itte^ted^rlo^bad^re(J^aE^kD^dE^oC^wmⁿeth^vo^od^l)^tage
V₍^I_B^FS_R^M_)CEO
T^Eyp^micⁱa^tl^tT^eh^r-e^brm^aa^sl^eR^bes^ri^est^aa^kn^dce^o(^wNoⁿte^v2^o)^ltage
V_{R(BΘRJ)AEBO}
T_Cyp_oic_la_lel _cJu_tonc_rti_con_utC_-a_op_fa_f c_cit_uan_rrc_ee_n(N_t ote 1)
O_Ep_mera_itti_tn_eg_r T_ce_um_tp_-oer_fa_ftu_cr_ue_rR_rean_ng_te
Storage Temperature Range
DC current gain
I^C_C^J_BO
I^T_E^J_BO
TSTG
h_FE
20
30
40
Test conditions
I_C=-50µA,I_E=0
I_C=-1mA,I_B=0
I_E=-50µA,I_C=0
V_CB=-20V,I_E=0
-55 to +125
V_EB=-5V,I_C=0
V_CE=-2V, I_C=-0.5A
50
60
80
100
150
Min _1.0Typ
Max
Unit
-30
V
-20 ³⁰
V
-6 ₄₀
120
- 65 to +175
82
V
-0.5
µA
-_-5₀5_.5to +150 _µA
390
200 ^V
A
A
℃
Collector-emittCerHAsRaAtuCrTaEtRioISnTvICoSltage
M_Cax_oim_lleu_cm_toFo_rr_ow_uar_td_pV_uo_tlt_ca_age_paat_c1_it.0_aA_ncD_eC
Maximum Average Reverse Current at @T A=25℃
R_Ta_rte_ad_nD_sC_itiB_ol_noc_fk_rin_eg_qV_uo_elt_na_cge_y
@T A=125℃
NOTES:
SVY_CM_EB_(sO_atL₎ FM12I0_C-M=H-1F.M51A3,0I-_BM=H-0F.M1154A0-MH FM150-MH FM160-MH FM180-MH-0F.M415100-MH FVM1150-MH FM1200-MH U
V_CF_ob
V_CB=-20V,I_E⁰=^.50⁰, f=1MHz ^0.70
60 ^0.85
pF ^0.9
0.92 V
IR
VCE=-6V,IC=-50mA,
f_T
0.5
10 ₁₂₀
MHz
m
f=30MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C^2- L^ThA^erS^mS^al I^RF^eI^sC^istA^anT^ceIO^FroN^m O^JunF^ctih^on_FE^{to Ambient}
RANK
P
Q
R
RANGE
82–180
120–270
180–390
MARKING
BFP
BFQ
BFR
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.