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2SB1260 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SB1260 THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
TRANSbISetTteOr rRev(ePrsNePle)akage current and thermal resistance.
FEATU• RLoEwSprofile surface mounted application in order to
z
optimize board space.
Po• wLoewr pTorwaenrsliosstso,rhigh efficiency.
z H•igHhigVhoclutarrgeent acanpdabCiluitryr,elonwt forward voltage drop.
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z Lo•wHiCghoslluercgetocra-epambiitlittey.r saturation voltage
• Guardring for overvoltage protection.
z Pb• -UFltrreaehigpha-cspkeaegdeswisitcahivnag.ilable
Ro• HSiSlicopnroedpiutacxtiafol prlapnaacrkcihnipg, cmoedtael ssiluicfofinxju”Gnc”tion.
• Lead-free parts meet environmental standards of
HalMogILe-SnTfDre-1e95p0r0o/d2u2c8t for packing code suffix “H”
• RoHS product for packing code suffix "G"
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
MAXIM• EUpMoxRy :AUTLI9N4G-VS0 r(aTtead=2fla5m℃e ruentalredsasntotherwise noted)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
Symbol
Parameter
,
• Terminals :Plated terminals, solderable per MIL-STD-750
VCBO
CollMecettohro-Bd a2s0e2 6Voltage
y VC•EOPolarityC:oInlledcictoarte-EdmbyittceartVhoodltaegbeand
Value 0.031(0.8) TypU. nit
0.031(0.8) Typ.
-80
V
-80
DiVmensions in inches and (millimeters)
r VE•BOMountinEgmPitotesrit-iBoans:eAnVyoltage
-5
V
IC• Weight C: AopllepcrotoxrimCautrerden0t.011 gram
-1
A
a PC
MCAolXleIcMtoUr MPoRweArTDINisGsipSatAioNnD ELECTRICAL CHARAC5T0E0RISTICSmW
in RatinRgsθJaAt 25℃ Tamhebriemnat lteRmepseisratatunreceunFlerosms oJthuenrcwtiisoensTpoecAifmiedb.ient
250
℃/W
SingleTpjhase halfJwunacveti,o6n0THezm, rpeesirsatitvuereof inductive load.
150
℃
For caTpstagcitive loaSdt,odraegraeteTceumrrpeentrabtyu2re0%
-55~+150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
lim Marking Code
12
13
14
15
16
18
MEaLxEimCumTRReIcCurAreLnt CPeHakARRevAerCseTVEolRtagISe TICS (Ta=V2RR5M℃ un2le0ss ot3h0erwis4e0spec5if0ied) 60
80
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
Maximum DC BPloacrkainmg Veoteltarge
SVyDmC bol 20 Test30conditi4o0ns 50 Min60 Typ80
e MCaxoimlluemctAovre-rbaagse eFobrwreaardkRdeocwtifniedvCoultraregnet
V(IBOR)CBO IC=-50µA,IE=0
-80 1.0
10
100
70
Max100
115
150
105
Unit150
V
120
200 V
140 V
200 V
A
r PeCaok lFloercwtaordr-SeumrgeittCeurrrebnrte8a.3kmdsoswinnglevhoalltfasginee-wave
V(BR)CEO
IFSM
P suEpemrimitpteosre-bd aonseratbedreloaakdd(JoEwDEnCvmoeltthaogde)
V(BR)EBO
IC=-1mA,IB=0
IE=-50µA,IC=0
-80
30
-5
V
A
V
TyCpoiclalleTchteorrmcaluRt-eosifsftacnucrer(eNnotte 2)
RIΘCJBAO
VCB=-60V,IE=0
40
-1
µA
℃
TyEpmicailttJeurncctiuont-oCfafpaccuitrarnecnet(Note 1)
Operating Temperature Range
CIEJBO
TJ
VEB=-5-54Vto,I+C=1205
120
-55-1to +150 µA
StDorCagceuTrermepnetragtaurienRange
TShTFGE
VCE=-3V, IC=-0.1A
82- 65 to +175 390
Collector-emitter saturation voltage
Collector outpCuHt AcRapACacTEitRanIScTeICS
Maximum Forward Voltage at 1.0A DC
MTaxriamnusmitAiovenrafgreeqRueevenrcseyCurrent at
Rated DC Blocking Voltage
@T A=25℃
@T A=125℃
VCE(sat) IC=-500mA,IB=-50mA
-0.4
V
SYMCBoOb L
VF
FM120V-MCHB=F-M11030V-,MIEH=F0M,1f4=01-MMHHFMz150-MH FM160-MH
0.50
0.70
2FM5180-MH FM1100-MH
0.85
FpMF1150-MH
0.9
FM1200-MH
0.92
U
V
VCE=-5V,IC=-50mA,
IRfT
f=30MHz
0.5 100
10
MHz
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF hFE
RANK
P
RANGE
82–180
MARKING
Q
120–270
ZL
R
180–390
2012-06
WILLAS ELECTRONIC CORP
2012-0
WILLAS ELECTRONIC CORP.