2SB1197KXLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – Low Frequency Transistor

WILLAS
2SB1197KxL^FT^M_T1¹_H²_R⁰_U^-M+
Low Frequency Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
PNP Silicon • Low profile surface mounted application in order to
optimize board space.
SOD-123H
• Low power loss, high efficiency.
• HFigEhAcTuUrrRenEt capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Hig_ƽh_Hs_igu_hrg_ce_urc_ra_enp_ta_cb_ail_pit_ay_c._{ity in compact package.}
• Guar_ICdr₌in_íg₀f_.8o_Ar _.overvoltage protection.
• Ult_ƽra_Eh_pi_itg_ah_x-_ias_lp_pe_lae_nd_as_rw_tyi_ptc_eh_. ing.
• Sil_ƽic_Non_PNep_ci_ota_mx_pia_lel_mp_ela_nn_t:a₂r_Sc_Dh₁ip₇,₈m_1Ketal silicon junction.
• Lead-free parts meet environmental standards of
MI^ƽL-^WST^eD^d-^e1^c9^la5^r0^e0^th/2^a2^t 8^{the material of product compliance with RoHS requirements.}
• RoHS^Pp^br^-o^Fd^ru^ect^efo^pr ^ap^cac^kk^ain^gg^eco^isde^as^vu^affiⁱx^la"G^b"^le
0.071(1.8)
0.056(1.4)
SOT– 23
Halog_Re_on_Hfr_See_pp_rr_od_du_uc_ct _tfo_fr_op_ra_pck_ai_cng_kic_no_gde_cs_ou_dff_eix_s"H_u"_{ffix ”G”}
Mec_Hh_aa_lon_gi_ec_na_frl_ed_e a_prt_oa_{duct for packing code suffix “H”}
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
3 0.024(0.6)
COLLECTOR
D^• E^CV^aI^sC^eE^{: M}M^oA^ldR^eK^dI^pN^laG^stA^icN^, D^SOO^DR^-1D²E³R^HING INFORMATION
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Device _{Method 2026}
Marking
Shipping
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
• Pol₂a_Sr_Bity₁₁:₉I₇n_Kd_Qic_La_Tte₁d by cathode ba_An_Hd_Q
• Mo₂u_Sn_Btin₁₁g₉P₇o_Ks_Rit_Li_To₁n : Any
AHR
• Weight : Approximated 0.011 gram
3000/Tape&Reel
3000/Tape&Reel
Dimensions in inches and (millim₂eters)
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating^Ms a^At^X2^I5^M℃^UMam^RAbi^Te^In^Nt^Gte^Sm^(Tp^ae⁼ra²t⁵u^qr^Ce ⁾unless otherwise specified.
Single phase half w^Pa^ave^ra,^m60^etH^ez^r , resistive of ind^Su^yc^mti^bv^oe^l load. ^Limits
Unit
For capacitCivoellelocatodr,-bdaesreatveocltuargrent by 20% VCBO
−40
V
Collector-em_Ri_Atte_Tr_INvo_Glt_Sage
Marking CodEemitter-base voltage
Maximum R_Cec_ou_llr_ere_cn_tot_rP_ce_ua_rk_reR_ne_t verse Voltage
Maximum R_CM_oS_llV_eco_tl_ota_rg_pe_{ower dissipation}
Maximum D_JC_uB_nclo_tc_iok_nin_tg_emVo_pl_eta_rg_ae_ture
Maximum Av_Se_tora_rg_ae_geFo_terw_ma_pr_ed_raR_te_uc_retified Current
VCEO _{SYMBOL FM}−3₁2_20-MH FM130-MHVFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH _{FM1200-MH U}
VEBO
−512
13 V 14
15
16
18
10
115 120
IC ^VRRM −0².8⁰
30 _A 40
50
60
80
100
150
200 V
PC ^VRMS
0.¹2⁴
21 _W 28
35
42
56
70
105
140 ^V
Tj ^VDC
15²0⁰
30 _°C 40
50
60
80
100
150
200 ^V
Tstg ^IO −55 to 150
°C
1.0
A
Peak Fo_Erw_La_Erd_CS_Tu_Rrg_Ie_CC_Au_Lrre_Cn_Ht 8_A.3_Rm_As_Cs_Tin_Egl_Re _Ih_Sa_Tlf _Is_Cin_Se-₍w_Ta_av₌e_25qCIF)SM
30
A
superimposed on rated load (JEDEC method)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junc^Ctio^on^lleC^ca^top^ra^-bci^ata^sn^ec^be^r(^eN^ao^kt^de^o1^w)^{n voltage}
BVCBO_CJ −40
−
−
V IC= −50µA
120
P
Operating Te^Cm^op^llee^cra^totu^r-r^ee^mRⁱa^ttn^eg^re^{breakdown voltage BVCEO}TJ ^−32
− -55 to−+125 V IC= −1mA
-55 to +150
Storage TemEpmeritateturr-ebaRsaenbgreeakdown voltage
BVETBOSTG −5
−
−
V IE= −50µA - 65 to +175
Collector cutoff current
ICBO
−
− −0.5 µA VCB= −20V
Emitter ^Ccu^Ht^Aof^Rf ^Acu^Cr^Tre^En^Rt^ISTICS
IEB^SO^YMBOL−^FM120-M−^{H FM1}−³0⁰.^-5^{MH FM}µ¹⁴A^0-MH V^FMEB¹=⁵⁰−^-4^MV^{H FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 V
Collector-emitter saturation voltage VCE(sat) −
− −0.5
V IC/IB= −0.5A/ −50mA
Maximum Average Reverse Current at
Rated DC Bl^Doc^Cki^cn^ug^rrV^eoⁿl^tta^tg^rae^{nsfer ratio}
@T A=25℃
@T A=125℃
hFE
IR
120
−
390
0.5
−
VCE= −3V, IC= −1₁0₀0mA
m
Transition frequency
fT
−
200
− MHz VCE= −5V, IE=50mA, f=100MHz
NOTES: _{Output capacitance}
Cob
−
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
12
30
pF VCB= −10V, IE=0A, f=1MHz
2- Thermal Resistance From Junction to Ambient
h_FE values are classified as follows :
Item(*)
Q
hFE
120~270
R
180~390
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.