2SB1132 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

WILLAS
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SOD-123+ PACKAGE
FM120-M+
2SB1132^THRU
FM1200-M+
Pb Free Product
Features
TRANS_•I_BS_aT_tcO_hR_pro(P_ceN_sP_{s d}) _{esign, excellent power dissipation offers}
FEATUR^bE^eS^{tter reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
z LowopVti_Cm_Ei₍z_se_at)board space.
z _Pb^•_-^L_F^o_r^w_e^p_e^ow_p^e_a^r_c^lo_k^s_a^s,_g^h_e^igh_is^eff_a^ic_v^ie_aⁿ_i^c_l^y_a^. _ble
• High current capability, low forward voltage drop.
Ro^•H^HS^ighp^sr^uo^rgd^eu^cc^at^pafo^bir^litp^y.acking code suffix ”G”
Ha^••lo_UGg_lutrae_arn^dhriigfⁿr_hge_-sfe^oprep^oer^vdo^esrd^vwu^oitlc_ctaht^ginf^eo_gp.r^rop^tea^cc^tik^oiⁿn^. g code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
MAXIM• ULeMadR-fAreTeIpNaGrtsSm(eTeat=e2n5vi℃ronumnelnetsalsstoatnhdaerrdws iosfe noted)
MIL-STD-19500 /228
Symb^• o^Rl^{oHS product fo}P^r a^pr^aa^cm^kine^gte^cr^{ode suffix "G"}
Value
Halogen free product for packing code suffix "H"
Unit
M ^VCBO ec^Ch^oa^llen^cti^oc^r-a^Bl^asd^ea^Vt^oa^ltage
-40
V
V_{CEO• Epox}C_yo_:l_Ule_Lc₉to₄r_--_VE₀m_ri_att_te_er_dV_flo_al_mta_ege_retardant
-32
V
Package outline
SOD-123H
SOT-89
1. BASE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2. COLLECTOR
3. EMITTER
1
2
3
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
V_EBO• CaseE:mMitoteldre-BdapsleasVtiocl,taSgOeD-123H
-5
V
,
I_C ^{• Term}Cⁱⁿo^an^lstin^:Puo^lau^tes^dC^to^el^rl^mecⁱⁿto^ar^lsC^, u^sr^or^le^dn^et^{rable per MI}-^L1^-STD-750A
0.031(0.8) Typ.
0.031(0.8) Typ.
I_CP*
Pulsed^MC^eo^thlle^oc^dto²r⁰²C⁶urrent
• Polarity : Indicated by cathode band
P_C
Collector Power Dissipation
• Mounting Position : Any
-2
A
500
mW
Dimensions in inches and (millimeters)
T_J
Junction Temperature
• Weight : Approximated 0.011 gram
150
℃
T_stg
Storage Temperature
-55~150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
6LQJOHSXOVH,3: PV
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
E^FL^oE^{r c}C^apT^aR^citIⁱC^veA^loL^adC^{, d}H^eA^raR^teA^cuC^rrT^enE^t R^byIS²⁰T^%ICS (Ta=25℃ unless otherwise specified)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code _Parameter
Maximum Recurrent Peak Reverse Voltage
M^Ca^oxi^lm^leu^cm^toR^rM^-bS^aV^so^elta^bg^re^{eakdown voltage}
Symbol ¹²Test c¹o³ndition¹s⁴
15
16 _Min18 _Typ10 _Max115 _Uni1_t20
VRRM
20
30
40
50
60
80
100
150
200 Volt
V_V(BRRM)CSBO I_1C4=-50μA₂,₁I_E=0 ₂₈
35
42 ^-4056
70
105 ^V 140 ^Volt
Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
V₍^V_B^D_R^C_)CEO
20
30
I_C=-1mA,I_B=0
40
50
60
80
-32
100
150
200 ^Volt
V
Maximum Average Forward Rectified Current
IO
1.0
Amp
P^Eea^mk ⁱF^to^terw^ra^-brd^aS^su^erg^be ^rC^eu^arr^ke^dnt^o8^w.3ⁿms^vs^oin^ltg^ale^gh^ealf sine-wave ^V(_I^B_F^R_S⁾_M^EBO
superimposed on rated load (JEDEC method)
T^Cyp^oic^lla^el ^cT^th^oe^rrm^ca^ul ^tR^-e^os^fi^fst^ca^unc^re^re(Nⁿo^t te 2)
R^ICΘ^BJ^OA
Typical Junction Capacitance (Note 1)
CJ
O^Ep^mera^itt^tin^eg^r T^ce^um^t-p^oe^fra^ft^cur^ue^rR^reaⁿng^te
I_TEJBO
S_Dto_Crag_ce_uT_rre_em_np_ter_ga_atu_ir_ne Range
TS_hT_FG_E
I_E=-50μA,I_C=0
V_CB=-20V,I_E=0
V_EB=-4_-5V₅,I_tCo=₊0₁₂₅
V_CE=-3V,I_C=-100mA
-5
30
V
Amp
40
-0.5 μA
℃/W
120
PF
-55 to +150^-0.5
μA
℃
- 65 to +175
82
390
℃
M^Ca^oxi^lm^leu^cm^toF^ro^-r^ew^mard^ittV^{eCorHltasAgaRetAu}aCt^rTa1E.^t0^iRoAI^{nSDTCvICoSltage}
M_Ta_rx_aim_nsum_itiA_ov_ner_fa_rg_ee_qR_ue_ev_ne_crs_ye Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
S_VY_CVM_EFB_(sO_atL₎
FM1_I2_C0₌-M_-5H₀F₀M_m13_A0_,-M_IB0H_=.5F_-50M₀14_m0-_AMH
FM150-MH FM160-MH
0.70
FM180-MH _-F₀M_.1₂100-MH_-0FM_.51150-MH
0.85
0.9
V^FM1200-MH
0.92
UNI
Volt
IfR_T
V_CE=-5V,I_C=-50mA,f=30MHz
0.5
150
10
MHz
mAm
N^COT^oE^llS^e:^{ctor output capacitance}
C_ob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h_FE
V_CB=-10V,I_E=0,f=1MHz
20
30
pF
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
BAP
2012-06
BAQ
BAR
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.