2SB1073 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

WILLAS
SO₁T_.0-_A8_S9_URP_FAla_CEs_Mti_Oc_U-_NE_Tn_Sc_CHa_Op_Ts_TKu_Yl_Ba_At_Re_RT_IEr_Ra_Rn_ECs_Ti_Is_FIt_Eo_RSrs_{-20V- 200V}
SOD-123+ PACKAGE
FM120-M+
2SB1073 ^THRU
FM1200-M+
Pb Free Product
Features
Package outline
TRANSIS^• T^BbO_eattR_tcehr(^prP_er ^ovN^ceP^er _ss)_es
design,
leakage
excellent power dissipation offers
current and thermal resistance.
FEATUR^•E^LS^{ow profile surface mounted application in order to}
optimize board space.
z Lo_•w_Lc_owol_ple_oc_wt_eo_rr_l-_oe_sm_s,i_htt_ie_gr_h s_efa_fit_cu_iera_nt_ci_yo_.n voltage V_CE(sat)
z La^•rg^He^igp^he^ca^urk^recⁿo^t l^cle^apc^ato^br^ilic^tyu^, r^lore^wn^fot ^rI^w_C^{ard voltage drop.}
z Pb^•-F^Hr^ige^he^sp^ura^gc^ek^ca^apg^ae^bii^ls^itya^. vailable
• Guardring for overvoltage protection.
Ro•HUSltrparhoigdhu-cstpefoerd pswaictckhiningg.code suffix ”G”
Ha^•lo^Sg^ile^icn^onfr^ee^pe^itap^xrⁱo^ald^pu^lacⁿt^af^ro^cr^hp^ipa^,c^mk^ein^tag^{l s}c^ilo^icd^oe^{n j}s^uuⁿf^cf^tiⁱx^on“^.H”
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
SOT-89 ^SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2. COLLECTOR
3. EMITTER
1
2
3
0.071(1.8)
0.056(1.4)
MAXIMU^• M^RoR^HSA^pT^roIN^duG^ctS^for(T^paa^c=^k2ⁱⁿ5^g℃^codu^en^sl^ue^ffs^ixs^"Go^"therwise noted)
Halogen free product for packing code suffix "H"
Symbol_MechaniP_ca_ara_lm_de_ate_tr_a
Value
Unit
0.040(1.0)
V_CBO • Ep_Co_ox_lly_e:_cU_toL_r9_-B4_a-V_se0 r_Va_ote_ltd_agfl_eame retardant -30
V
0.024(0.6)
V_CEO
V_EBO
y _IC
r _PC
• Ca_Cs_oe_lle: M_cto_ol_rd_-Eed_mp_itl_ta_es_rt_Vic_o, _lS_taO_gD_e-123H
-20
V_,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base Voltage
-7
V
Method 2026
• Po^Cla^or^lli^ety^ct:^oI^rnd^Ci^uca^rrt^eeⁿd^tb^-y^Cc^oaⁿt^thⁱⁿo^ud^oe^ub^sand ^-4
A
• MCouonllteinctgoPr oPsoiwtioenr :DAisnsyipation
0.5
W
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a _TJ
• WJeuignhctti:oAnpTpermoxpimeraatteudre0.011 gram 150
℃
in ^Tstg
Stora_Mge_AT_Xe_Im_Mp_Ue_Mrat_Rur_Ae_{TINGS AND}-5_E5_L-_E15_C0_TRICA℃_{L CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
ELE^SCⁱⁿT^glR^e I^pC^haA^sL^{e h}C^alH^{f w}A^aR^veA^{, 6}C^0HT^zE^, R^reI^sS^istT^ivI^eC^oS^{f in}(^dT^ua^c=^ti2^ve5^l℃^oadu^. nless otherwise specified)
For capacitive load, derate current by 20%
lim ^{Parameter RATINGS}
Marking Code
Co_Mll_ae_xc_imto_ur_m-b_Ra_es_ce_urb_rer_ne_t a_Pk_ed_ako_Rw_en_vev_rso_elt_Va_og_lte_age
e CoMllaexcimtourm-eRmMiStteVrolbtargeeakdown voltage
Maximum DC Blocking Voltage
SymSbYoMlBOL FMT1e2s0-tMHcoFMn1d3i0t-iMoHnFsM140-MH FM150-MH FM160-MMHinFM180T-MyHpFM110M0-MaHx FM115U0-nMiHt FM1200-MH
12
13
14
15
16
18
10
115 120
V_(BR)VCBRORM I_C=-₂1₀0μA,I_E=₃0₀
40
50
60 ^-30 80
100
150^V 200
V_(BR)^V_CE^R_O^MS
14
21
I_C=-1mA,I_B=0
28
35
42 _-20 56
70
105_V 140
VDC
20
30
40
50
60
80
100
150
200
r _{EmMitatxeimr-ubmasAevebrargeeaFkodrwoawrdnRveoclttifaiegdeCurrent}
V_(BR)EBI_OO I_E=-10μA,I_C=0
1-.70
V
P _CoP_lle_ea_ck_tF_oo_rrw_ca_urd_t-S_ou_fr_fge_cC_uu_rr_rr_een_nt_t8.3 ms single half sine-wave_{ICBOIFSM VCB=-30V,IE=0}
30
-0.1
μA
superimposed on rated load (JEDEC method)
Em^Ti^yt^pte^icr^alc^Tu^ht^e-^ro^mf^af^lc^Ru^er^sr^ise^tn^ant^{ce (Note 2)}
Typical Junction Capacitance (Note 1)
I_EBO^RΘJA V_EB=-7V,I_C=0
CJ
40
-0.1
μA
120
DCOcpuerrarteinngtTgemaipnerature Range
h_FE TJ V_CE=-2V,I^-_C⁵=⁵-^t2^oA⁺¹²⁵
120
-55 to +315105
Storage Temperature Range
Collector-emitter saturation voltage
TSTG
V_CE(sat) I_C=-3A,I_B=-100mA
- 65 to +175
-1
V
CHARACTERISTICS
Tra_Mn_as_xi_imtio_umn _Ffr_oe_rwq_au_rden_Vc_oly_{tage at 1.0A DC}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
f_{T VF} V_CE=-6V,I_C=-50m₀A_.5,₀f=200MHz _0.70
12_0.0₈₅
0.^M9 ^Hz 0.92
Co^Mll^ae^xc^imto^ur^mo^Au^vt^ep^rau^gt^ec^Ra^ep^va^ec^rsi^eta^Cn^uc^rre^{ent at @T A=25℃} Cob ^IR VCB=-20V,IE=0,f=1MHz
Rated DC Blocking Voltage
@T A=125℃
0.5
40
pF
10
NOTES:
CL¹A^- S^MeS^asIF^urI^eC^{d a}A^t T^{1 M}IO^HZN^anO^d F^apph^lie_F^d_E^{reverse voltage of 4.0 VDC.}
2- Thermal Resistance From Junction to Ambient
Rank
Q
R
Range
120-205
180-315
Marking
IQ
2012-06
2012-0
IR
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WILLAS ELECTRONIC CORP.