2SA812XLT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
2SA812xLT^F1^M_T¹_H²_R⁰_U^-M+
1.0A^GS^eURⁿF^eA^rC^aE ^lM^POU^uN^rT^pS^oCH^sO^eTT^TKY^raBⁿAR^sRⁱI^sER^toRE^rsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FE^•A^LT^oU^wR^pE^{rofile surface mounted application in order to}
ƽ_•H_Loig_oph_wtiV^mpo^iozlt_wa^eg_ebe_ro:_laoV^rs_C^ds_EO,shp=_iag-^c5_he0_e.V_ff._iciency.
ƽ_•E_Hpi_it_ga_hxia_cl_up_rrla_en_na_tr_ct_ayp_pe_a._{bility, low forward voltage drop.}
ƽ_•N_HP_iN_ghco_sm_urp_gle_em_ce_an_pt_a: 2_bS_iliC_ty1_.623
ƽ_•W_Ge_uade_rdc_rla_inr_ge _ft_oh_rat_ot_vh_ee_rvm_oa_ltt_ae_gri_eal_po_rof p_tero_ctd_iu_oc_nt_. compliance with RoHS requirements.
•^PU^bl^-t^Fra^reh^eig^ph^a-^cs^kp^ae^ged^e s^isw^ait^vc^ahⁱi^ln^ag^b.^le
•RSoiHlicSopnreopdiutactxifaolrpplaacnkainr gchciopd, emesutafflixsi”liGco” n junction.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•_HL_ae_loa_gd_e-f_nre_fre_ep_ea_pr_rts_odm_ue_ce_t t_foe_rn_pv_air_co_kn_inm_ge_cn_ota_dl_es_sta_un_ffd_ixa_“r_Hds_” of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
SOT-23
DEV^HI^aC^loE^genM^frA^eeR^pK^roI^dN^ucG^{t fo}A^r N^paD^ckiO^ngR^coD^dE^e R^suI^fN^fixG^"HI^"NFORMATION
Mechanical data
Device
Marking
• Epoxy : UL94-V0 rated flame retardant
Shipping
2_•S_CA_a8_s1_e2Q_{: M}LT_o1_ld
ed
plastic,
M8
SOD-123H
3000/Tape&Reel
2•STAe8rm12inRaLlTs1:Plated terminalsM, 6solderable per MIL-ST30D0-07/5T0a^,pe&Reel
0.031(0.8) Typ.
1
BASE
3
COLLE⁰C^.0T⁴O⁰R^(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
2_•S_PA_o8_la12_riS_tyLT_{: I}1_ndicated
by
M7
cathode
band
3000/Tape&Reel
2
Dimensions in inches and (mil_Elim_Me_ITt_Te_Ers_R)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratin_Mgs_Aa_Xt 2_IM5℃_UMamb_Rie_Ant _Tte_Im_Np_Ger_Sature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load^R,^ad^teⁱⁿra^gte current by 20% ^Symbol
L2SA812
Unit
Collector-Emitter Voltage
RATINGS
V_CEOSYMBOL
-50
V
FM120-MH FM130-MH FM140-MH FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
U
Marki^Cng^oC^lleo^cd^te^{or-Base Voltage}
V_CBO
12^-60 13
V₁₄
15
16
18
10
115 120
Maxim_Eu_mm_itR_tee_rc_-u_Br_are_sn_et P_Ve_oa_lk_taR_ge_everse Voltage
V_EBO ^VRRM
20_-6 30
V⁴⁰
50
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
Collector current-continuoun
IC
-150
mAdc
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Vo
56
70
105
140 ^Vo
80
100
150
200 ^Vo
Maximum Average Forward Rectified Current
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typica_Tl T_Hhe_Erm_Ra_Ml R_Aes_Lista_Cnc_He_A(N_Rot_Ae 2_T)_EERISTICS RΘJA
40
℃
TOyppeircaatlinJgunTcetimonpeCraatpuarecitRaannc_Cege_h(N_ao_rt_ae_c1_t)_eristic
CJ
TJ
Symb_-o₅₅l _{to +125} Max
Unit ¹²⁰
-55 to +150
P
℃
Storag^Te^oT^te^am^{l D}pe^era^vtⁱu^cr^ee ^DRa^isn^sgⁱe^{pation FR-5 Board, (1)} TSTG
P_D
- 65 to +175
℃
T_A=25^oC
200
mW
Derate abov^Ce^H2^A5^RoAC^CTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
VF
FM120-MH
FM130-MH FM₁14_.80-MH
0.50
FM150-_mMH_WF_/M_oC160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UN
Vo
Maxim^Tum^heA^rmve^ara^lg^Re^eR^se^isve^tarsⁿe^cC^eu^, r^Jre^unⁿt^ca^tt^ion@^tT^oA^A=2^m5^b℃^ient _IR
R _θJA
556
o_{C/W 0.5}
mA
Rated _TD_oC_taB_llo_Dck_ei_vng_icV_eo_Dlta_isg_se_ipation @T A=125℃
P_D
10
NOTES^A: ^{lumina Substrate, (2) TA=25 oC}
1- Meas_Du_ere_rd_aa_tet 1_aM_bH_oZ_vean₂d₅a^op_Cplied reverse voltage of 4.0 VDC.
200
mW
2.4
mW/^oC
2- Therm_Thal_eR_re_msi_ast_la_Rnc_ee_sF_isro_tam_nJ_cu_en_,ct_Jio_un_nto_ctA_iom_nbi_te_ont_Ambient
R _θJA
417
o_C/W
Junction and Storage Temperature
Tj ,Tstg -55 to +150
o_C
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.