2SA1797 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-50V, -3A)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
2SA1797
TRANSISTOR (PNP)
FEATURES
Low saturation voltage
Excellent DC current gain characteristics
Pb-Free package is available
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-6
-2
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-50µA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-50µA, I_C=0
I_CBO
V_CB=-50V, I_E=0
I_EBO
V_EB=-5V, I_C=0
h_FE
V_CE=-2V, I_C=-500mA
V_CE(sat) I_C=-1A, I_B=-50mA
f_T
V_CE=-2V, I_C=-0.5A, f=100MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
MIN TYP MAX UNIT
-50
V
-50
V
-6
V
-0.1 µA
-0.1 µA
82
270
-0.35 V
200
MHz
36
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
AGP
Q
120-270
AGQ
2012-10
WILLAS ELECTRONIC CORP.