2SA1576AXT1 Datasheet, PDF (1/4 Pages) –

SOT-323 Plastic-Encapsulate Transistors
2SA1576AxT1
TRANSISTOR (PNP)
FEATURES
z Excellent h_FE linearity
z Pb-Free package is available
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
z Moisture Sensitivity Level 1
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25 ^℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-150
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA,I_C=0
Collector cut-off current
I_CBO
V_CB=-60V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-6V,I_C=0
DC current gain
h_FE
V_CE=-6V,I_C=-1mA
Collector-emitter saturation voltage
V_CE(sat) I_C=-50mA,I_B=-5mA
Transition frequency
f_T
V_CE=-12V,I_C=-2mA,f=30MHz
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
C_ob
V_CB=-12V,I_E=0,f=1MHz
Q
120-270
FQ
R
180-390
FR
Min Typ
-60
-50
-6
120
140
4
Max Unit
V
V
V
-0.1 μA
-0.1 μA
560
-0.5
V
MHz
5
pF
S
270-560
FS
2012-
WILLAS ELECTRONIC CORP.