2SA1201 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SA12^T0^H1^RU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
TRAN^bS^etI^tS^erT^rO^evR^ers(P^e N^leaP^k)^{age current and thermal resistance.}
• Low profile surface mounted application in order to
FEAToUpRtimEiSze board space.
z ^•H^Li^og^wh^pv^oo^wl^eta^r g^loe^{ss, high efficiency.}
• High current capability, low forward voltage drop.
z _•H_Hig_igh_{h s}tr_ua_rgn_esi_ct_aio_pn_abf_ir_le_ityq_.uency
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
z ^•_P^G_b^u_-^a_F^r_r^d_e^ri_e^ng_p^f_a^o_c^{r o}_k^v_a^e_g^rv_e^ol_i^t_s^ag_a^e_v^p_a^r_i^o_la^te_b^c_l^ti_e^on.
••_{RSUoilltHircaSohnip}ge_rhp_o-its_{dapuxeicaetldfpo}slaw_rniptac_{arhccinkhgiinp. ,gmceotadlesislicuoffnixju”nGct”ion.}
2. COLLECTOR
0.071(1.8)
0.056(1.4)
•HLaelaodg-ferenefrpeaertspmroedeut ecnt vfioror npmaecnktianlgstcaonddaerdssuofffix “H”
MIL-STD-19500 /228
MAX^• I^RM^oHU^SM^prR^odA^ucT^tI^fN^orG^paS^ck(ⁱⁿT^ga=^co2^d5^e℃^sufu^fixn^"l^Ge^"ss otherwise noted)
Sym_Mb^Ho_e^al^l_c^og_h^en_a^fr_n^ee_ic^pr_a^od_l^uP_d^ca^tr_a^fa^o_t^rm_a^pe^at^ce^kr^{ing code suffix "H"}Value
Unit
3. EMITTER
V_{CBO• Epoxy :CUoLlle9c4t-oVr-0BarasteeVdoflltaamgee retardant}
-120
V
V_{CEO• Case : MCoollldecetdorp-Elamsittitce,rSVOolDta-g1e23H}
-120
V
V_EBO• Termina_El_ms _i:_tP_tel_ra_-Bte_ad_sete_Vrm_olti_an_ga_els, solderable per M-IL5-STD-750,_V
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
y _IC
Colle^Mct^eo^tr^hC^ou^dr²re⁰n²t ⁶-Continuous
-0.8
A
r _PC
• Polarity : Indicated by cathode band
Collector Power Dissipation
0.5
W
• Mounting Position : Any
a T_J
Junction Temperature
• Weight : Approximated 0.011 gram
150
℃
Dimensions in inches and (millimeters)
T_stg
Storage Temperature
-55-150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
in _{ERSLiantEginleCgspThaRat s2IeC5℃hAaLlfawmCabvHieenA, t6Rt0eHAmzpC,erTerasEtiusRrtievIeSunoTlfeIisCnsdSuocth(tieTvreaw=lios2aed5s.℃pecuifnielde. ss otherwise specified)}
For capacitive_Plo_aa_rad,_md_ee_tra_et_re current by 20%
Symbol Test conditions
Min Typ Max Unit
lim ^RATINGS
M^Car^oki^ln^leg^cC^to^od^re^{-base breakdown voltage}
Maximum Recurrent Peak Reverse Voltage
M^Cax^oim^llu^em^ctR^oM^r-S^emVoⁱl^tt^ta^eg^re ^{breakdown voltage}
e _{MEaxmimitutmerD-bCaBsloeckbinregaVkodltaogwe n voltage}
r _{Maximum Average Forward Rectified Current}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
V_{(BR)CBO 1}I_C2=-1mA₁,₃I_E=0 ₁₄
15
16 ^-121⁰8
10
115 ^V120
VRRM
20
30
40
50
60
80
100
150
200 Volts
V_{V(RBMR)SCEO 1}I_C4=-10m₂A₁,I_B=0 ₂₈
35
42 ^-12056
70
105 ^V 140
Volts
V^V_(B^D_R^C_)EBO ²I_E⁰=-1mA³,I⁰_C=0 ⁴⁰
50
60
-5 ⁸⁰
100
150 _V 200
Volts
IO
1.0
Amps
P ^{PeCaok lFloercwtaordr Scuurgt-eoCfufrcreuntrr8e.3nmts single half sine-wave}
I_CBO
IFSM
V_CB=-120V,I_E=0
-0.1 μA
30
Amps
superimposed on rated load (JEDEC method)
Emitter cut-off current
Typical Thermal Resistance (Note 2)
R^IΘ^EJ^BA^O
V_EB=-5V,I_C=0
-0.1 μA
40
℃/W
Ty_Dp_Cica_cl _uJu_rn_rc_et_nio_tn_gC_aa_ip_nacitance (Note 1)
Operating Temperature Range
C_hJ_FE
TJ
V_CE=-_-5₅₅V,_tI_oC=₊₁-1₂0₅0mA
120 ₈₀
-55 to +150 ²⁴⁰
PF
℃
St_Cor_oa_lg_le_ecT_te_om_rp_-eer_mat_iu_tr_te_eR_r a_sn_ag_te_{uration voltage}
T_VS_CT_EG_{(sat) IC=-500mA,IB=-50mA}
- 65 to +175
-1
V
℃
Base-emitter v^Co^Hlt^Aa^Rg^Ae^CTERISTICS
Maximum Forward Voltage at 1.0A DC
SYM_VB_BO_E L FM12_V0_C-M_E=H_-F₅M_V1_,3_I0_C-₌M_-H₅F₀M₀1_m40_A-MH FM150-MH FM160-MH FM180-MH FM1100-MH F_-M₁1150-MH F_VM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
M_Tax_raim_nu_sm_itA_iov_nera_frg_ee_qR_ue_eve_nr_cse_yCurrent at @T A=25℃
IR^fT
Rated DC Blocking Voltage
@T A=125℃
V_CE=-5V,I_C=-100mA
0.5
120
10
MHz
mAmps
NO^CT^oE^lS^le: ^{ctor output capacitance}
C_ob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V_CB=-10V,I_E=0,f=1MHz
30
pF
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h_FE
Rank
O
Y
Range
80-160
120-240
Marking
DO
2012-06
DY
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.