2SA1037AKXLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
FM120-M+
2SA1037AKxLT1_THRU
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
PNP Silicon • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
Feat^or^pu^te^ims^{ize board space.}
• Low power loss, high efficiency.
z• H^Wig^eh^dc^eu^cr^lare^rent^thc^aa^tp^ta^hb^eil^mity^a,^tl^eo^rw^ialfo^or^fw^pa^rord^duv^co^tlta^cog^me ^pd^lrⁱo^anp^c. ^{e with RoHS requirements.}
• H^Pi^bgh^-Fs^ru^er^ege^pc^aa^cp^ka^ab^gil^eityⁱ.^{s available}
• GRuoaHrdSripngrofdour cotveforvr oplatacgkeinpgroctoedcteiosnu. ffix ”G”
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• U_Hlt_ar_la_oh_gi_eg_nh-_fs_repe_ee_pd_rosw_duitc_ch_t i_fn_og_r._{packing code suffix “H”}
• Silicon epitaxial planar chip, metal silicon junction.
OR_•D_LE_eR_aI_dN_-G_freIN_e F_pO_arR_tsM_mA_eT_eIO_{t e}N_{nvironmental standards of}
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• Ro^DH^eS^vp^icr^eoduct for packing c^Po^ad^ce^kasu^gf^efix "G"
Shipping
2^HS^aA^lo1^g0^e3ⁿ7^fA^reK^eX^pL^roT^d1^{uct for p}S^acO^kTⁱⁿ-^g23^{code suff}3^ix00^"H0^"/Tape & Reel
SOT– 23
Mechanical data
MAXIMUM RATINGS
• Epoxy : UL94-V0 rated flame retardant
• Case ^R: M^atoⁱⁿld^ged plastic, SOD-1^S2^y3^mH^{bol Value}
Unit
•CToelrlemcitnora–lEs m:PitltaetreVdoltteargmeinals, soVldCeErOable pe–r5M0IL-STD-V750,
0.031(0.8) Typ.
0.040(1.0)
0₃.024(0.6)
COLLECTOR
0.031(0.8) Typ.
1
Collector–Ba^Mse^eV^tho^olta^dg²e⁰²⁶
V CBO
–60
V
BASE
• _EP_mo_il_ta_ter_ri_–t y_B:_aI_sn_ed_Vi c_oa_ltt_ae_gd_e b y
cathode
V^b
and
EBO
• Mounting Position : Any
Collector Current — Continuous I _C
• Weight : Approximated 0.011 gram
Collector power dissipation
P_C
–6.0
–150
0.2
V
mAdc
W
Dimensions in inches and (millimeters)
2
EMITTER
Junction^Mte^Am^Xpe^IMrat^Uur^Me ^RATINGS T^A_j^{ND ELE}1^C50^TRICAL°C^{CHARACTERISTICS}
Ratings a_St_to2_r5_a℃_{ge t}a_em_mb_pi_ee_rn_at_tute_rm_e perature unles_Ts_sto_g therw_-5i₅se_~sp₊e₁c₅i₀fied. _°C
Single phase half wave, 60Hz, resistive of inductive load.
For c^Dap^Ea^Vc^Iit^Civ^Ee ^Mloa^Ad^R, d^Ke^Ir^Na^Gte current by 20%
2SA1037AKRQALT1IN=GFSQ 2SA1037AKSLTS1YM=GBO3FL FM122S0-AM1H0F3M71A3K0-RMLHTF1M=1F40R-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH _U
Markin_Eg_LC_Eo_Cde_{TRICAL CHARACTERISTICS}
Maximum Recurrent Peak Reverse Voltage
(T_A
=
25°C unless
VRRM
1_o2_therwise1_n3_oted.)
20
30
14
40
15
50
16
60
18
10
115 120
80
100
150
200 Vo
Maximum RMS Voltage
Characteristic
VRMS
14 ^Sym2^b1^ol
2^M8ⁱⁿ
35^Typ 42^Max 56^Unit 70
105
140 ^Vo
MaximumCDoClleBclotocrk–inEgmVitoteltar gBereakdown Voltage
VDC
20 _{V (BR}3_)C0_EO
4_–0₅₀ 50_— 60 _— 80 _V 100
150
200 ^Vo
Maximum⁽A^ICve⁼ra^–g¹e^mF^Aor⁾ward Rectified Current
IO
1.0
A
Emitter–Base Breakdown Voltage
V _(BR)EBO
–6
—
—
V
Peak Forw₍a_Ir_Ed₌Su_–rg₅e₀C_µu_Arr₎ent 8.3 ms single half sine-wave _IFSM
30
A
superimpos_Ce_od_llo_en_ctr_oat_re_–d_Bl_ao_sa_ed (_BJ_rE_eD_aE_kC_dom_we_nth_Vo_od)_ltage
V _(BR)CBO
– 60
—
—
V
Typical Th₍e_ICrm₌al_–R₅e₀si_µst_Aa₎nce (Note 2)
RΘJA
40
℃
Typical JuCncotliloenctCoar pCauctiotaffnCceu(rNreontte 1)
Operating₍T_Ve_Cm_B =pe–ra6tu0reV)Range
CJ
TJ
-^I5^C5^BOto +125 ^—
—
–¹²0⁰.1
µA
-55 to +150
P
℃
Storage TeEmmpiteterartucuretoRffacnugrerent
TSTG
I _EBO
—
— ^{- 65}– ^t0^o.1⁺¹⁷⁵ µA
℃
(V_EB = – 6 V)
Collector-^Cem^HAitt^Re^Ar ^Csa^Tt^Eur^Ra^It^Sio^Tn^ICv^Soltage
Maximum ₍F_ICo_/rw_IBa₌rd _–Vo₅l₀ta_mge_Aa_/t _–1.₅0_mA D_AC₎
SYMBOL FM120-MH_VFM_CE1_(s3_a0_t)-MH FM14_—0-MH FM150_—-MH FM160_--₀M_.5H FM180-_VMH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
Maximum _DA_Cve_cra_ug_rre_eR_nte_tv_re_ar_ns_se_feC_ru_rr_are_tin_ot at @T A=25℃
IR
h _FE
120
––
5⁰6^.50
––
mA
Rated DC(BVlo_Cc_Ek=ing–V6oVlta, gI e_C= –1mA) @T A=125℃
10
Transition frequency
N1-OMTeEaSs:ure_{(dVaCt E1=MH–Z1a2nVd ,aIppE=lie2dmreAve, rfs=e3v0oMltaHgze}
)
of
4.0
VDC.
Output capacitance
2- Thermal ₍R_Ves_Ci_Bs₌tan_–ce₁F₂ro_Vm_{, I}J_Eu₌nc₀ti_Aon_{, f}to₌A₁m_Mb_Hie_zn₎t
f_T
—
140
––
MHz
C _ob
—
4.0
5.0
pF
h _FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.