2SA1036KXLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – Medium Power Transistor

WILLAS
FM120-M+
2SA1036KxLT1_THRU
Me_1.0d_Aiu_SUm_RFAP_CEo_Mw_Oe_UNr_TT_Sr_Ca_Hn_OTs_Ti_Ks_Yto_BAr_R⁽_R^*_IER³²_RE^V_C^,_T^*_IFIE⁰_R^.5_S^A_-2⁾_{0V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
•
FFeatures
High surge capability.
•
1) Large IC.
Guardring for
overvoltage
protection.
• Ultra^Ih^CMig^axh^. -⁼sp^*e⁵e⁰d⁰s^mw^Aitching.
• S²il⁾ico^Ln^oe^wpi^Vta^CEx⁽i^sa^atl^).p^Il^da^en^aa^lr c^foh^rip^l,^om^w-e^vt^oa^ll^ts^ai^gli^econ junction.
• Lead^o-f^pr^ee^re^ap^tioaⁿrt^.s meet environmental standards of
M₃I₎L-S_WTD_e-_d1_e9_c5_la0_r0_e/2_th2_a8_{t the material of product}
• RoHS _cp_oro_md_pu_lc_iat _nfo_cr_ep_wac_itk_hin_Rg_oc_Hod_Se_rs_eu_qf_ufi_ix_re"G_m"_ents.
Haloge_Pn_bf_-r_Fe_re_ep_ero_pd_au_cc_kt_afo_gr_ep_ia_sc_aki_vn_ag_ilc_ao_bd_le_e suffix "H"
Mech_Ra_oHn_Sic_pra_odl_ud_cta_fot_ra_{packing code suffix ”G”}
• Epoxy_H:_aU_loL_g9_e4_n-V_fr0_eera_pt_re_od_dufl_ca_tm_foe_rr_pe_ata_cr_kd_ina_gnt_{code suffix “H”}
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• PFoSlatrriutyct:uIrnedicated by cathode band
• M^Eo^pu^itn^at^xiⁱn^ag^{l p}P^laoⁿs^ait^rio^tn^yp:^eAny
PNP silicon transistor
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
3
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
1
2
SOT-23
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (m₃illimeters)
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at_F2_D5℃_EVa_ICm_Ebi_Men_At _Rte_Km_INpe_Grature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
2
For capacit¹iv⁾e lo²a^Sd^A, ¹d⁰e³ra⁶t^Ke^Qcu^Lr^Tre¹n⁼t ^Hby^Q20%
2) 2SA10R3A6TKIRNLGTS1 =HR
PNP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Maximum R_FM_AS_bsV_oo_ll_uta_tg_ee_{maximum ratings (Ta = 25_C)}VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured_Fat_O1_RM_DH_EZ_Ran_INd _Gapp_INlie_Fd_Ore_Rve_Mrs_Ae_Tv_Io_Olta_Nge of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Device
Package
Shipping
2SA1036Kx LT1G
SOT-23
3000/Tape & Reel
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.