2N7002WT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – Small Signal MOSFET 115 mA, 60 V

WILLAS
1.^S0A^mSU^aR^lF^lA^SCE^igMOⁿU^aN^lT ^MSCH^OO^STT^FKY^EB^TARR¹IE¹R⁵RE^mCTI^AFIE^,R⁶S⁰-20^VV- 200V
SOD-123+ PACKAGE
FM120-M+
2N7002W^TT^H1^RU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
N–Channel SOT–323 • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• Hig_•h cWurerednetcclaarpeatbhialittyth, leowmafoterwriaalrodfvporlotadguectdrop.
• High scuorgmepcliaanpcaebiwlitityh. RoHS requirements.
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Gua_•rd_Eri_Sng_Dfo_Pr_ro_ov_te_er_cv_to_el_dta_:g₁e₀p₀r₀o_Vtection.
•
•
Ultr_•a
high-speed switching.
Pb-Free package
is
available
Silicon epitaxial planar chip, metal silicon junction.
• Lead-fRreoeHpSartpsrmodeuetcetnfovirropnamceknintagl sctoadndeasrdusffoixf ”G”
• R^Mo^IH^L-S^Sp^HTr^Do^ad^-l1ouc^9gt^5ef⁰oⁿ⁰r p^f/r2a^ec^2ek⁸in^pg^rc^oo^dd^ue^cs^tu^fff^oix^r "^pG^a" ^{cking code suffix “H”}
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
SOT– 323
Mec_Mh_Aa_XIn_Mi_Uc_Ma_Rl _Ad_Ta_INt_Ga_S
• Epoxy : UL94-V0 rate_Rd_atf_il_na_gme retardant
Symbol Value Unit
0.040(1.0)
Simplified Sc⁰h^.0e²⁴m^(0.6a⁾tic
• Case_D:_raM_ino_–ld_Se_od_urp_cela_Vs_oti_lc_ta, _gS_eOD-123H
V_DSS
60
,
• Term_Din_raa_il_ns_–:_GP_ala_tete_Vd_ot_lte_ar_gm_ei₍n_Ra_Gls_S,₌so_1.l₀de_Mra_Ωb₎le per MIL_V-S_DT_GRD-750 ₆₀
Drain C^Mur^ere^thn^ot ^{d 2026}
• Polarit_–y :_CI_on_nd_ti_inc_ua_ote_ud_s b_Ty_C c₌a₂t₅h_°o_Cde_(Nb_oa_tend_1.)
I_D
±115
I_D
±75
• Mounti^–ng^CoPⁿo^tsⁱⁿi^uti^oo^un^s:^TACn⁼y ^{100°C (Note 1.)}
– Pulsed (Note 2.)
I_DM
±800
Vdc0.031(0.8) Typ.
0.031(0.8) Typ.
Vdc
mAdc
Gate 1
Dimensions in inches and (millimeters)
3 Drain
• Weight : Approximated 0.011 gram
Gate–Source Voltage
M^{– C}A^oXⁿI^tiM^nuU^ouM^s RATINGS AND ELECTR^VIC^GSAL CHA^±2R⁰ ACTE^VR^dcISTICS
– Non–repetitive (tp ≤ 50 µs)
V_GSM
±40
Vpk
Ratings at 25℃ ambient temperature unless otherwise specified.
Source 2
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
(Top View)
THERM^RA^AL^TC^INH^GA^SRACTERISTICS ^{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Rev^Ce^hrs^ae^raV^co^tl^eta^rg^ise^tic
VRRM ^Sym2^b0^{ol M}30^ax
U₄₀nit ₅₀
60
80
100
150
200 Volts
Maximum RMS^TV^oo^talta^l g^De^{evice Dissipation FR–5 Board} VRMS
Maximum
DC
Bloc_D(k^Nein^org_atetV_e3o_a.l⁾t_ba^Tog^Ae_v=e
25°C
25°C
VDC
Maximum Avera_Tg_he_eF_rmor_aw_la_Rrd_esR_ise_tc_ati_nfi_ce_ed_,C_Ju_ur_nr_ce_tn_iot _{n to Ambient}IO
P_D14
20
R_θJA
2₂2₁5
2^m8^W 35
1.8
30
m₄W₀/°C ₅₀
556 °C/W
42
56
70
105
60
80
100
150
1.0 ^{MARKING DIAGRAM}
& PIN ASSIGNMENT
140 ^Volts
200 ^Volts
Amps
Peak Forward Su_Tr_og_te_aC_{l D}ur_ere_vn_ict _e8.3_Dm_iss_sis_pi_ang_til_oe_nhalf sine-wave _IFSM
P_D
superimposed on raAteludmloianda(SJEuDbEsCtramtee,t(hNodo)te 4.) TA = 25°C
Typical Thermal R^Des^ei^rs^ata^tenc^ae^b(^oN^vo^ete²⁵2^°)^C
RΘJA
300
mW
mW/°C
2.4
30
Drain
3
40
Amps
℃/W
Typical Junction_TC_heap_rmac_ai_lta_Rn_ec_se_is(N_tao_nte_ce1_,)_{Junction to Ambien}C_t J _RθJA
417 °C/W
120
PF
Operating Temp_Je_ur_na_ctu_tir_oe_nR_aa_nn_dge_{Storage Temperature}
Storage Temperature Range
TJ _{TJ, Tstg}
TSTG
-55 to +125
-55 to °C
+150
- 65 to +175
-556tCo +150
℃
℃
1
2
1. The_CP_Ho_Aw_Re_Ar_CD_Ti_Ess_Rip_ISa_Tti_Io_Cn_Sof the package_SYm_Ma_By_Ore_Ls_Fu_Mlt₁in₂₀a_-Mlo_Hw_Fe_Mr₁c₃o_0-n_Mti_Hnu_Fo_Mu₁s₄₀d_-Mra_Hin_{FM150-MH FM160-MH FM}^G₁^a₈^t₀^e_{-MH FM1100-MH}^S_F^o_M^ur₁^c₁^e_{50-MH FM1200-MH UNIT}
Maximum For₂w_.ar_Pcd^uuV^rlrso^eelⁿta_Ttg^.ee_sta_:t_P1_u.0_lsA_eD_WC_{idth ≤ 300 µs, Duty}V_CF_{ycle ≤ 2.0%.}
Maximum Ave₃r_.ag_Fe_RR_–e₅v₌ers₁e_.0C_xu₀rr_.e₇n₅t a_xt_0.@₀₆T₂A_i=_n2_. 5℃
IR
0.50
0.70
6C 0.8=5 Device Code0.9
0.5 ^W
=Month Code
0.92 Volts
mAmps
Rated DC Blo4c.kinAgluVmoilntaage= 0.4 x 0.3 x 0@.0T2A5=i1n2959℃.5% alumina.
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
ORDERING INFORMATION
Device
Marking
Shipping
2N7002WT1 6C. 3000 Tape & Reel
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.