2N7002T Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

WILLAS
SOT-523 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2N7002T^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
M_•O_LbS_oewtF^{t e}E_prrT^roef(^vi _lN^eer-_ssC_uerh^lfeaa^acn^ken^amge_oel)_ucnutrerde ^natpapnl _{idc at} ^ht _{ieornmianlorredsei} ^{sr ttaon c e .}
FE^oA^pT^tiU^mR^izeE^bS^{oard space.}
•
•
L_zow po_Hw_ie_gr_hlo_ds_es,_nh_sig_ith_ye_cff_eic_llie_dn_ec_sy._ign
High current capability, low forward
for
volt
a^log^we d^Rro^Dp^S.^(ON)
• Hzigh sVurogletacgaepacboilintyt.rolled small signal switch
• G_zuard_Rrin_ug_gf_gor_eo_dve_ar_nv_dolt_ra_eg_le_iap_bro_letection.
• Ultra high-speed switching.
• S^zilicon^Heⁱp^gi^htax^si^aal^tupl^ra^an^ta^iorⁿch^cip^u,^rm^reeⁿta^tl^cs^aili^pc^aon^bij^lu^itn^yction.
• Lzead-f_Pre_be_-p_Fa_rr_ets_em_pee_at_ce_kn_avi_gro_enm_isen_ata_vl_ast_ia_lan_bda_lerds of
MIL-STD-19500 /228
• RoHS p^Rro^od^Huc^St fo^pr ^rp^oac^dk^uin^cg^tc^fo^od^re ^psu^aff^cix^k"ⁱGⁿ"^{g code suffix ”G”}
SOD-123H
SOT-⁰5^.142⁶⁽3^3.7)
0.130(3.3)
0.012(0.3) Typ.
1. GATE
2. SOURCE ¹
3. DRAIN
3
0.071(1.8)
0.056(1.4)
2
Haloge_Hn f_are_loe _gpr_eo_ndu_fc_rt_efo_er p_pa_rc_oki_dng_uc_co_td_fe_os_ru_pffi_ax _c"H_k"_{ing code suffix “H”}
Mechanical data
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
• Case : Molded plastic,
MAXIMUM RATINGS
S_(TO_aD₌-₂12₅3_℃H
unless
otherwise
n, oted)
0.031(0.8) Typ.
Marking: K72
• Terminals :Plated terminals, solderable per MIL-STD-750
Symbol
Metho^Pd^ar2^a0^m26^eter
Value Units
0.031(0.8) Typ.
y _{• VPDoSlarity : IndicDartaeidn-bSyocuartcheovdoeltbaagned}
60
V
Dimensions in inches and (millimeters)
r _{• IMDounting PosDitiroanin: CAnuyrrent}
115
mA
a _{• PWDeight : ApprPoxoiwmearteDdis0s.0ip1a1tigornam}
150
mW
R_{θJA ThMerAmXaIlMRUesMistRanAcTeINfroGmSJAunNcDtioEnLtoEACmTbRieICntAL83C3HARA℃C/TWERISTICS}
in Ratings a^Tt^J25℃ ambien^Jt^utⁿem^ctp^ioeⁿra^Ttu^er^me ^pun^el^re^as^ts^uro^etherwise specified. ¹⁵⁰
℃
Single ph_Ta_ss_tge half wave,_S6_to0_rH_az_g, _ere_Ts_eis_mtiv_pe_eo_raf i_tn_ud_ru_ective load.
For capacitive load, derate current by 20%
-55~+150 ℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
lim ^{MEarLkiEngCCTodReICAL CHARACTERISTICS (Ta=25℃ un12less o1t3herwis1e4 spec1i5fied) 16}
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
Parameter
Maximum RMS Voltage
VRRM
20
Symbol
VRMS
14
30
40
50
Test conditions
21
28
35
60
80
100
Min
Typ
42
56
70
150
Max
105
200
Unit
140
Volts
Volts
e _{MaxiDmruaminD-CSoBluorcckiengBVroeltaakgedown Voltage}
r _{MaxiGmuamteA-TvehrraegsehForlwdaVrdoRlteacgtiefied Current}
V^VD^(BC^R)DSS 20^VGS=0 3^V0^{, ID=250}40^µA 50
60 ⁶⁰ 80
100
150
2_V00
Volts
VIO_th(GS) V_DS=V_GS, I_D=250 µA
1.0 1
Amps
P ^{PeakGFoartwea-rbdoSdurygeLCeuarrkeantg8e.3 ms single half sine-wave IFSlMGSS}
V_DS=0 V, V_GS=±25 V
30
±80
nA
Amps
super_Zim_ep_ro_ose_Gd_ao_tn_era_Vte_od_ltlo_aa_gd_e(J_DED_raE_iC_nm_Cet_uh_ro_rd_e) _nt
I_DSS
V_DS=60 V, V_GS=0 V
80
nA
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
Typic^OalⁿJ^-u^sn^tc^at^tio^en^DC^ra^apⁱaⁿcit^Can^uc^re^re(Nⁿo^tte 1)
C^IDJ ^(ON)
V_GS=10 V, V_DS=7 V
12⁵0⁰⁰
mA
PF
Operating Temperature Range
Stora^Dg^re^aTⁱⁿem^-Sp^oer^ua^rtu^cr^ee R^Oaⁿn^-g^Re ^esistance
TJ
TS^RT^DG^S(on)
V_GS^-=⁵1⁵0^toV⁺, ¹I_D²=⁵500mA
V_GS=5 V, I_D=50mA
- 65 to +175
-55 to +150 ₇
7
℃
Ω
℃
Forward TraCnHsAcRoAnCdTuEcRtIaSnTIcCeS
Maximum Forward Voltage at 1.0A DC
MaxiDmruaminA-vseoraugrecReeovenr-sveoClutarrgenet at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBgOfsL FM120V-MDHS=F1M013V0-,MIHD=FM210400m-MAH FM150-MH FM160-MH8F0M180-MH FM1100-MH FM5101500-MH FM1m20s0-MH UNIT
VF
V_GS=10V, I⁰_D^.=⁵5⁰00mA
0.70
0.85
V_IRDS(on)
V_GS=5V, I_D=50mA
0.5
10
3.⁰7^.5⁹
0.375
0_V.92
V
Volts
mAmps
Diode Forward Voltage
NOTES:
V_SD
1- MeIanspuruedt aCt a1pMaHcZitaanndcaepplied reverse voltage of 4.0 VDC. C_iss
I_S=115mA, V_GS=0 V
0.55
1.2
V
50
2- The_Orm_ua_tl_pR_ue_tsi_Csta_an_pc_ae_cF_ir_to_am_nJ_cu_enction to Ambient
C_oss
V_DS=25V, V_GS=0V, f=1MHz
25
pF
Reverse Transfer Capacitance
C_rss
5
SWITCHING TIME
Turn-on Time
2^T0^u1^r2^n--^o0^ff6^Time
t_d(on)
t_d(off)
V_DD=25 V, R_L=50Ω
I_D=500mA,V_GEN=10 V
R_G=25 Ω
20
ns
40
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.