2N7002NT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – 30 V, 154 mA, Single

WILLAS
30 V, 154 mA, Single, N−Channel, Gate
1.0A _ESU_SR_DFA_PC_rE_oM_teO_cU_tiN_oT_nS_,C_SH_CO_−T₈TK₉Y BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2N7002N^THT^R1^U
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultr^Fa^eh^aig^tuh-^rs^ep^seed switching.
• Silic•onLeopwitaGxaiatel pClahnaarrgcehfiopr, mFaesttalSswiliictcohninjugnction.
• Lea_•d-f_Sre_me_ap_llar₁t_.s₆m_Xee₁t_.6en_mvi_mron_Fm_ooe_tn_pt_ra_il_ns_ttandards of
• R^Mo^IH^L•-S^Sp^TEr^Do^Sd^-D1uc^9Pt^5rf⁰o^o0r^tep^/c2a^tc^2ek^8din^Gg ^aco^tede suffix "G"
Halo•ge_Pn _bfre_-Fe_rp_er_eod_pu_act_cf_kor_ap_ga_eck_ii_sng_ac_vo_ad_ie_las_bu_lf_efix "H"
Mech_Ra_on_Hi_Sc_pa_rl_odd_ua_ctt_fa_{or packing code suffix ”G”}
• Epoxy_H: U_aL_lo9_g4_e-V_n0_frr_ea_ete_pd_rf_ola_dm_uce_tr_fe_ot_rar_pd_aa_cn_kt_{ing code suffix “H”}
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
S C0 .-082 49( 0 . 6 )
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Applica^Mti^eo^tn^hs^{od 2026}
• Pola_•rit_Py_o:_wIn_ed_ric_Ma_ate_nd_agb_ey_mca_et_nh_to_Ld_oe_ab_dan_Sd_witch
• Mou_•nt_Lin_eg_vP_elo_Ssi_hti_io_fn_t : Any
Dimensions in inches and (millimeters)
Gate 1
• Wei_•gh_Pt _o: A_rtp_ap_br_lo_ex_Aim_pa_pt_le_icd_a0_ti._o0_n1_s1 _sg_ura_chm_{as Cell Phones, Media Players,}
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Drain
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phas^Me h^Aa^Xlf^IMwa^Uv^Me, 6^R0^AH^Tz^I,^Nre^Gs^Sisti⁽v^TeJ o⁼f ²in⁵d^°u^Cc^utivⁿe^lel^so^sa^od^t.^{herwise noted)}
Source 2
For capacitive load, derate cur_Pre_an_rt_ab_my_e2_te0_r%
Symbol Value Unit
Drain−to−^RS^Aou^Tr^Ic^Ne^GV^Soltage
SYMBOL FM1_V2_D0-_SM_SH FM130₃-₀MH FM14_V0-MH FM150-MH FM160-MH FM180-MH FM1⁽1^T0^o0^p-M^VH^ieF^wM⁾1150-MH FM1200-MH UNIT
Marking Code_{Gate−to−Source Voltage}
1_V2_GS 1_"3 ₁₀ 14_V
15
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
Continuous Drain
Maximum RM_CS_uV_rro_elt_na_tg₍e_{Note 1)}
Steady State = 25°C
VRMS
14^ID
154 mA
21
28
35
Maximum DC Blocking Voltage
Power Dissipation
Steady State =^VD2^C5°C ²⁰P_D
30₃₀₀ 4_m0_W
50
Maximum Ave(rNaogteeF1o)rward Rectified Current
IO
16
60
42
60
1.0
18
10
115 120
80
100
150
200
56
70
105
140
80 ^MARK1^I0^N0^{G DIAG}15^R0^AM 200
3
Volts
Volts
Volts
Amps
Peak
Forward
P_Su_urls_ge_ed_CuD_rr_rea_nin_{t 8}C_.3u_mrre_sn_st_ingle
half
sine^tP-w^vave¹⁰
ms
IFSM
superimposed _Oon_pera_rt_ae_td_inlo_ga_Jd_u(_nJE_cD_tioE_nC_am_ne_dth_Sod_to)_{rage Temperature}
Typical Thermal Resistance (Note 2)
RΘJA
Typical Juncti_Con_onC_ta_inp_ua_oc_uit_san_Sc_oe_u(_rN_co_ete_C1_u)_{rrent (Body Diode)} CJ
Operating Tem_Lep_ae_dra_Ttu_er_me _pR_ea_rn_ag_te_{ure for Soldering Purposes}TJ
Storage Temp₍₁er_/8at_″u_fr_re_oR_ma_cn_ag_se_{e for 10 s)}
TSTG
I_DM
618 mA
T_J, −55 to °C
T_STG
150
I_SD
154 mA
-55 to +125
T_L
260 °C
30
T6
40
120
1
2
-55 to +150
TF = Specific Device Code
- 65 to +175_{M = Month Code}
Amps
℃/W
PF
℃
℃
THER_CM_HA_AL_RAR_CE_TS_ERIS_IST_TA_ICN_SCE RATINGS_{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Maximum Forward Voltage at 1.0A_PaD_rC_ameter
VF
Symbol Max^0.50 Unit
Maximum Ave_Jr_ua_ng_ce_tiR_oe_nv_−e_tors_−e_AC_mu_brr_ieen_nt_t a_–t _S@_teaT_dA_y=2_S5_ta℃_{te (NoteIR1)}
Rated DC Blocking Voltage
@T A=125℃
R_qJA
416 °C/W
Maximum ratings are those values beyond which device damage can occur.
NOTES: Maximum ratings applied to the device are individual stress limit values (not
1-
Measured
a^net^ox1_crmeM_eaH_dlZ_eoda^p,n^ed^rdaea^tp_vinp_icgli_ee^cd^ofurⁿe_ndv_ce^ittr^iios_oe^nnsav⁾o_l l^aota^npg^dee_rao_arf_tei4_o.ⁿⁿ0^oV_itsD^vanC^lo.^idt
simultaneously. If
implied, damage
these limits are
may occur and
2- Thermal Re_resi_ls_iata_bn_ilc_ite_yF_mro_am_yJ_bu_enc_ati_fo_fen_cto_teA_dm_. bient
1. Surface−mounted on FR4 board using 1 in sq pad size
0.70
0.85
0.9
0.92 Volts
0.5 ^{ORDERING INFORMATION}
1D0evice
Marking
Shipping
mAmps
17002NT1
T6 3000/Tape&Reel
(Cu area = 1.127 in sq [1 oz] including traces).
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.