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2N7002LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318-08, STYLE 21 SOT-23 (TO-236AB)
WILLAS
Sm1.0aAllSUSRiFgAnCaElMMOUONTSSFCEHTOTT1K1Y5BAmRRAIEmR RpEsCT, IF6IE0RVS -o20lVts- 200V
SOD-123+ PACKAGE
FM120-M+
2N7002LTT1HRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
N–• CLohw paronfinleesulrfSacOe mTo–un2te3d application in order to
optimize board space.
SOD-123H
3
•
• Low power loss, high efficiency.
•WHeigdheccularrreentthcaatpthaebilmitya,telorwialfoorfwparroddvuoclttaagree
Halogen
drop.
Free
and
•coHmigphlisaunrcgee wcaitphaRbioliHtyS. requirements.
• •EGSuDarPdrriontgefcotreodv:1er0v0o0ltVage protection.
0.146(3.7)
0.130(3.3)
1
2
0.012(0.3) Typ.
• •PUblt-rFarheieghp-sapcekeadgsewiitschainvga. ilable
• Silicon epitaxial planar chip, metal silicon junction.
•RLoeHadS-frpereopdaurctst
for packing code suffix ”G”
meet environmental standards
of
SOT–
23
0.071(1.8)
0.056(1.4)
HMaIlLo-gSeTnD-f1re9e50p0r/o2d2u8ct for packing code suffix “H”
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS
• Case : Molded plastic, SOD-123H
Rating
Symbol Value, Unit
• Terminals :Plated terminals, solderable per MIL-STD-750
Drain–Source Voltage
Method 2026
VDSS
60
Vdc
0.031(0.8) Typ.
Simplified Sch0e.0m40a(1.t0i)c
0.024(0.6)
Gate 1
0.031(0.8) Typ.
•DPraoinla–rGitayte: IVnodlitcaagtee(dRbGyS c=a1th.0oMdeΩb) and
VDGR
60
Vdc
Dimensions in inches and (millimeters)
•DMraoinunCtuinrrgenPtosition : Any
ID
±115 mAdc
•
– Continuous TC = 25°C (Note 1.)
W–eCigohnttin: AuopupsroTxCim= 1a0te0d°C0.(0N1o1teg1r.a)m
ID
±75
IDM
±800
– Pulsed (Note 2.)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Gate–Source Voltage
Ratings at–2C5℃ontianmuobuiesnt temperature unless otherwiseVsGpSecified. ±20
Vdc
Single pha–sNe ohna–lfrewpaevteit,iv6e0(Htpz,≤re5s0isµtsiv)e of inductive loaVdG.SM
±40
Vpk
3 Drain
Source 2
(Top View)
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
MaximumTRHMESRVMoAltaLgeCHARACTERISTICS
Maximum DC Blocking VCohltaagraecteristic
VRMS
14
21
28
35
VSDCymbol 20 Max 30 Unit 40
50
42
56
70
105
60 M&APR8IN0KIANSGSDIG1I0AN0GMREANMT 150
140 Volts
200 Volts
Maximum TAovtearlaDgeevFicoerwDairsdsRipeacttioifinedFRCu–r5reBnot ard
Peak Forward(NSourtgee3C.)uTrrAen=t 82.53°mCs single half sine-wave
Derate above 25°C
IO PD
IFSM
225
mW
1.8 mW/°C
1.0
Drain
30
3
Amps
Amps
superimposed on rated load (JEDEC method)
Typical ThTehrmeraml Rael sRisetsainsctaen(cNeo,teJu2n)ction to Ambient
Typical JuTnoctiaolnDCeavpicaeciDtainscseip(aNtoiotne 1)
Operating TeAmlupmeriantaurSeuRbasntrgaete,(Note 4.) TA = 25°C
Storage TemDpeerraattuereabRoavnege25°C
RΘJRAθJA
CJ PD
TJ
TSTG
556 °C/W
300
mW
-55 to m+1W25/°C
2.4
40
120
1
- 65 to G+a1t7e5
702
-55 to +150
2
Source
℃/W
PF
℃
℃
Thermal Resistance, Junction to Ambient
Junction aCnHdASRtAoCraTgEeRTIeSmTIpCeSrature
Maximum Forward Voltage at 1.0A DC
RθJA
417 °C/W
702 = Device Code
SYVMTFBJ,OTLstgFM120-M-+51H55Ft0Mo 130-M0H°.C5F0M140-MH
FM150-MH FM160-MH
0.70
FMW180-MH F=MM1o10n0t-hMCHoFdMe1150-MH
0.85
0.9
FM1200-MH
0.92
UNIT
Volts
Maximum
Rated D1C.
Average Reverse Current at @T A=25℃
BTlohcekiPngowVeorltDagisesipation of the@pTaAc=k1a2g5e℃may
reIsRult
in
a
lower
continuous
drain
0.5
10
current.
mAmps
NOTES: 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
1- Measu34re.. dFAaRltu1–m5MinH=aZ1=a.0n0dx.4a0px.p70l5ie.3dx xr0e.0v0e.60rs22e5invio.nlta9g9e.5o%f 4a.0luVmDiCn.a.
ORDERING INFORMATION
2- Thermal Resistance From Junction to Ambient
Device
Marking
Shipping
2N7002LT1
702
3000 Tape & Reel
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.