2N7002KLT1 Datasheet, PDF (1/8 Pages) WILLAS ELECTRONIC CORP – 380mA N-Channel Small Signal MOSFET - 60V

380mA N-Channel Small Signal MOSFET - 60V
2N7002KLT1
PRIMARY CHARACTERISTICS
V_(BR)DSS
R_DS(on) MAX ^I_D ^MAX
(Note 1)
60 V
2.3 W @ 10 V 380 mA
2.7 W @ 5.0 V
FEATURES
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• We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
SOT-23 PACKAGE
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
RK
Simplified Schematic
Gate 1
1
2
Gate
Source
3 Drain
RK
= Device Code
W
=Month Code
Source 2
(Top View)
APPLICATIONS
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MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Steady State
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GS
I_D
Value
60
±20
320
230
Unit
V
V
mA
t<5s
T_A = 25°C
T_A = 85°C
Power Dissipation (Note 1)
Steady State
t<5s
Pulsed Drain Current (t_p = 10 ms)
Operating Junction and Storage
Temperature Range
P_D
I_DM
T_J, T_STG
380
270
300
420
1.5
−55 to
+150
mW
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
300
mA
T_L
260
°C
Gate−Source ESD Rating
(HBM, Method 3015)
ESD
2000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Junction−to−Ambient − Steady State
(Note 1)
Symbol
R_qJA
Max
417
Unit
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
R_qJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2014.11
www.willas.com.tw
Rev. >0Ï­
P1