|
2N7002ELT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – 310 mAmps, 60 Volts | |||
|
WILLAS
1S.0mAaSlUlRSFAigCnE aMlOMUNOTSSCFHEOTTT3K1Y0BAmRRAIEmRpRsEC, T6IF0IEVRoS l-t2s0V- 200V
SOD-123+ PACKAGE
FM120-M+
2N7002ELTH1RU
FM1200-M+
Pb Free Product
Features
⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
NâChannel SOTâ23 ⢠Low profile surface mounted application in order to
optimize board space.
⢠Low power loss, high efficiency.
⢠P⢠bH-iFghreceurrpeanct ckaapgaebiliisty,alvowaifloarbwlaerd voltage drop.
R⢠oHHigSh spurrogdeuccatpafobriliptya. cking code suffix âGâ
⢠Guardring for overvoltage protection.
H⢠aUllotrgaehnigfhr-esepeperdosdwuictcthfionrg.packing code suffix âHâ
⢠Silicon epitaxial planar chip, metal silicon junction.
⢠Lead-free parts meet environmental standards of
MIL-STD-19500 /228
⢠RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAMXIeMcUhMaRnATicINaGlSdata
⢠Epoxy : UL94R-aVt0inrgated flame retardantSymbol Value Unit
Drâ¢aiCnâaSseou:rMceoVldoeltdagpelastic, SOD-123H
VDSS
60
Vdc
Drâ¢aiTneârGmaitneaVlsol:tPaglaete(RdGtSer=m1i.n0aMlsâ¦, s) olderableVpDeGrRMIL-STD60-750, Vdc
Drain Current Method 2026
â¢âPCoolnatrinituyo:uIsndTiCc=at2e5d°Cby(Ncaotteho1d.)e band
ID
â¢ââMCPoounulstnientiunogtu<sPo1s0iutsion : Any
IDM
310
1200
mAdc
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOTâ 23
0.031(0.8) Typ.
310 mAMPS
60 VOLTS 0.040(1.0)
R = 1.5 W 0.024(0.6)
DS(on)
V = 1.8 V GS(th)
0.031(0.8) Typ.
N - Channel
Dimensions in inches and (millimeters)
3
Gaâ¢teWâeSioguhrtc:eAVpopltraogxeimated 0.011 gram
â
â
Continuous
NonâreMpeAtiXtivIeM(tUpM⤠5R0 AµsT) INGS
AND
EVLVGEGSSMCTRIC±±A24L00
Vdc
CHAVRpAk CTERISTICS
1
Ratings at 25â ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
2
Marking Code
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM18M0-MAHRFKMI1N1G00-MDHIAFGM1R15A0M-MH FM1200-MH UNIT
12
13
14
15
16
18& PIN A1S0SIGNM1E1N5T 120
MaximuTmHREeRcuMrrAenLt PCeHakARReAveCrsTeEVRoIltSaTgeICS
VRRM
20
30
40
50
60
80
10D0rain 150
200 Volts
Maximum RMS VoltageCharacteristic
VSRyMmSbol 14Max 21Unit 28
35
42
56
70 3
105
140 Volts
MaximumToDtaCl DBelovcikciengDVisoslitpaagetion FRâ5 Board
VDPCD
20225 30 mW 40
50
60
80
100
150
200 Volts
Maximum A(Nveortaeg2e.)FToArw=ar2d5R°Cectified Current
IO
1.8 mW/°C
1.0
801
Amps
Derate above 25°C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimpTohseedrmonalraRteedsilsotaadn(cJeE,DJEuCncmtieothnotdo) Ambient
Typical TThoetarml DaleRviecseisDtainscseip(aNtiootne 2)
IFRSθMJA
RÎPJAD
556 °C/W
300
mW
30
1
Gate
40
2
Source
Amps
â/W
Typical JunDAcletuiormantienCaaapbSaoucvbietsat2nrac5et°eC(,N(Nootete1)3.) TA = 25°C
CJ
Operating Temperature Range
TJ
mW/°C
2.4 -55 to +125
120
801 = Device Code
PF
W-55 to +=15W0ork Week
â
Storage TTheemrpmearal tRureesiRsatanngcee, Junction to Ambient TSRTθGJA
417 °C/W
- 65 to +175
â
Junction and Storage Temperature
CHARACTERISTICS
TJ, Tstg
âo55 to
°C
SYMBOL FM120+-1M5H0FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
1. The Power Dissipation of the package may result in a lower continuous drain
MaximumcAuvrreernagt.e Reverse Current at @T A=25â
IR
Rated2D. CFBRloâc5ki=ng1.V0oxlta0g.7e5 x 0.062 in.@T A=125â
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
NOTES:
0.70
0.85
0.9
0.92 Volts
0.5
10 ORDERING INFORMATION
mAmps
Device
Marking
Shipping
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2N7002ELT1
801
3000 Tape & Reel
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
|
▷ |