2N7002DW1T1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – 115 mAmps,60 Volts

WILLAS
1.S0AmSUaRllFASCiEgMnOaUlNMT SOCHSOFTTEKTY B1A1R5RIEmR AREmCTpIFsIE,R6S0-2V0Vo- l2t0s0V
SOD-123+ PACKAGE
FM120-M+
2N7002D^TW^H1^RT^U1
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
bet_Nter_–re_Cve_hrs_ae _nlea_nka_eg_le _Scu_Orre_Tnt_-a₃nd₆t₃hermal resistance.
• Low profile surface mounted application in order to
SOD-123H
opti_•miz_We _ebo_da_er_cd_las_rp_ea_tc_he_a._{t the material of product are Halogen Free and}
• Low po_cw_oe_mr _plo_lis_as_n,_ch_eig_wh_ite_hff_Ric_oie_Hn_Scy_r._equirements.
•
•
•
GHHiiuggahh^••rdscruu^EPirrn^Sgrbgee^D-nfFoct^{Parcrpoaeroavpe}eb^taerib^{plvciitolatyie}lt.^cty^da,^k:gl^1oae^0wgp^0freo0ort^Viwescatr^aido^vnv^a.o^{iltlaagbeledrop.}
0.146(3.7)
0.130(3.3)
• Ultra hi_Rgh_o-_Hsp_See_pd_rs_ow_dit_uc_chi_tn_fg_o. _{r packing code suffix ”G”}
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-fr^Hee^alp^oa^grt^es ⁿme^fre^et ^een^pvi^rr^oo^dnm^ue^cn^t t^fa^ol ^rst^pan^ad^ca^krⁱdⁿs^gof^{code suffix “H”}
MIL-STD-19500 /228
• RoHSMpAroXdIMucUt fMor RpaAcTkiInNgGcSode suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical daRtaating
• EpoxDyra: iUn−LS9o4u-Vrc0erVaotletadgfelame retardant
Symbol
V_DSS
Value
60
Unit
Vdc
3
2 1 ^0.040(1.0)
0.024(0.6)
• CaseD:raMino−ldGeadtepVlaosltatigce, S(RO_GD_S-=1213.0HMW)
V_DGR
60
,
• Termi_Dn_ra_al_is_n :_CP_ula_rrt_ee_nd_t terminals, solderable per MIL-ST_IDD-750 _{± 115}
− CoMnteinthuoouds2T0_C26= 25°C (Note 1)
•
P
o
l
a
−
rity_−:
CP_Inuodlnsite_cind_au_{t(oeNudostbeTyC2c)=a}
100°C
thode
(Note
band
1)
I_D
± 75
I_DM
± 800
Vd₀c_{.031(0.8) Typ.}
mAdc
D₂
G S _{1 0.031(0.81) Typ.}
Dimensions in inches and (millimeters)
• Moun_Gti_an_tg_e−P_So_os_uit_ri_co_en_V:_oA_ltn_ay_ge
• Weight _−: A_Cp_op_nr_tio_nx_ui_om_ua_sted 0.011 gram
V_GS
± 20
Vdc
− Non−repetitive (t_p ≤ 50 ms)
V_GSM
± 40
Vpk
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
S₂
G₂
D₁
Ratings at 25℃ ambient temperature unless otherwise specified.
4
5
6
Single phase half wave, 60Hz, resistive of inductive load.
For capacitiv_Te_Hlo_Ea_Rd,_Mde_Ar_Late_Cc_Hu_Arre_Rn_At _Cby_T2_E0_R%_ISTICS
Ch^Ra^Ara^Tc^INte^Gri^Sstic
Symbol^{SYMBOL FM12}M⁰a^-Mx^{H FM130-MH FM}U¹⁴n⁰i^-t^{MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Marking Code
Maximum Recu^Trr^oe_Ptn^aet^l _rP^DDe^ea_evk_viciR_ceee^Dve^isr^ssⁱe^paV^to^ioltⁿage
Maximum RMS Vo_Fl_Rta_−ge_{5 Board (Note 1)}
P_{D VRRM}
VRMS
12
13
2³²0⁸⁵⁰⁰
30
14
21
14
15
m₄₀W
50
28
35
16
18
10
115 120
60
80
100
150
200 Volts
42 ^OR5^D6 ^ERING70^INFORM1^A0^T5 ^ION 140 ^Volts
Maximum DC Bloc^TkAin⁼g ²V⁵o^°lt^Cage
Maximum Average^DF^eo^rarw^tea^Ard^bR^ove^ecti²fi⁵e^°d^CCurrent
VDC
20
30
40
50
60
80
100
150
200 ^Volts
3.0
mW/°C
Device
Marking
Shipping
IO
1.0
Amps
Thermal Resistance,
R_qJA
328
Peak Forward Surg_Je_uC_nu_cr_tr_ie_on_nt _t8_o.3_Am_ms_bs_ii_en_ng_tle half sine-wave _IFSM
°C/W
2N7₃0₀02DW1T1
702
3000 Tape & Reel_Amps
superimposed on_Jura_nte_cd_tiolo_nad_an(J_dE_SD_tE_oC_ram_ge_ethod)
T_J, T_stg
−55 to +150
°C
Typical Thermal R_Te_es_mist_pa_en_rc_ae_tu(_rN_eo_Rte_a2_n)_ge
RΘJA
40
℃/W
Typical Junct₁io_.n _FC_Rap_−a₅c₌ita₁n_.c₀e_x(N₀o_.7te₅ 1_x)_{0.062 in}
CJ
Operating Temperature Range
TJ
-55 to +125
120
-55 to +150
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.