1SS400G Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – High Speed SWITCHING Diodes

WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
66^F*^M120-M+
THRU
FM1200-M+
LESHAN RADI_PO_bCO_FM_rePA_eN_PY,_rL_oT_dD_u. _ct
Switching diode ^{Package outline}
Switching diode ^Features
• Batch process design, excellent power dissipation offers
SOD - 723
better reverse leakage current and thermal resistance.
•^•A^Lop^opwp_timl^pic_irzoa_eft^ibli^eo_on^saurs_{drfaspceacmeo.} ^unted
application
in
order_•
t_Ao_pplications
High speed switching
• L_Ho_iw_ghpo_sw_pe_er_el_dos_ss_w, h_iti_cg_hh_ine_gfficiency.
• Features
.042(1.05)
.037(0.95)
•^•F^He^iga^htu^cr^ue^rrs^{ent capability, low forward voltage drop. 1) Extremely small surface mounting type.}
• High surge capability.
2) High Speed.
• G¹⁾ua^Er^xd^tr^ri^eng^mf^eo^lr^yo^sve^mrv^ao^lllt^sa^ug^re^fap^cro^ete^mct^oio^unⁿ.^{ting type. 3) High reliability.}
• U₂l₎tr_Ha_ih_gi_hgh_S-_psp_ee_ee_dd_. switching.
• Construction
•
•
S₃i₎li_Hco_ign_he
Lead-fre
ep^reiptala^iaxritbasillm^iptylea.entaerncvhiripo,nmmeetnatlaslislitcaonndjaurndcstioo•fn^{SW.iliecodnecelpairtaextihaal} tptlahneamr aterial
of
product
• CMoILn-sStTruDc-1ti9o5n00 /228
compliance with RoHS requirements.
• _SR_io_liH_cS_onpr_eod_pu_itc_at _xfo_iar _lpa_pc_laki_nng_arcode suffix "G"
Halogen free product for packing code suffix "H"
M^•e^Dc^eh^via^cen^Mic^aa^rklⁱⁿd^gata
• Device Marking
L1SS400GT1G=3
.057(1.45)
.053(1.35)
SOD-123H
L1SS400GT1G
0.146(3.7)
0.130(3.3)
1
0.012(0.3) Typ.
2
.022(0.55)
0.071(1.8)
0..0015 67((10..44) 5 )
SOD - 723
1
CATHODE
2
ANODE
• Ep¹o^Sxy^S:⁴U⁰L⁰9^G4-⁼V³0^r^Ra^Ut^e^d flame retardant
0.040(1.0)
0.024(0.6)
•
•
C^•a^Ps e^b-:^FM^reo l^ed e^pd^ap^cl^ka^as^gt i^ec , ⁱS^sO^aD^v-^a1ⁱ2^la3^bH^le
ABSOLUTE MAXIMUM
RoHS product
Terminals :Plated
for packing code
terminals, soldera
suffix
ble pe
"G"
r MIL-
ST
Parameter
D^Pe-^a7^k5^re0^{ve, rse}
voltage
RATINGS (Ta = 25°C)
0_S._y0_m31_b(_o0_l.8) Typ.
VRM
.006_Li(_m0_i._t1_s5)MIN.
90
Unit
V
Halogen free product for packing code suffix "H^D"^{C reverse voltage}
VR
80
V
Method 2026
Peak forward current
I FM
225
mA
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Mean rectifying current
Surge current (1s)
D
i
IO
men _{I surge}
s
i
o
n
sDi
100
nmiennc₅s₀hio₀enssainn
mA
din(cMheilsli_mma_Anedt
e(mrsil)limeters)
• Mounting Position : Any
Junction temperature
Tj
125
°C
Storage temperature
Tstg
– 55 ~ +125
°C
• W_ABei_Sg_Oh_Lt :_UA_Tp_Epr_Mo_Axi_Xm_IMat_Ue_Md 0_R.0_A1_T1_INg_Gra_Sm_{(Ta = 25°C)}
Ratings
at
25^PPD℃^aeCraaM_rka^mem^rA_veeeb^tXveri^ese^rIreMn^st^evUt_oe^vlMm_toalp^tgaRe_egr^Aa^et^Tur^Ie^Nu^Gnl^Ses^SAs^yVVo^NmRt_Rh^MbDe^or^lEw^Lis^Ee ^Csp^Te^Rcif^Iie^CELd^LiA98m.^{EFRPC00oaeLirrT}_v^taws_e^RmaC_r^I_sr^{CedetAHevcrLouAlrCtraeHRgnAet ARACCTTEREISURTVVnICIitSSSy(mTTVa}_IbR^{IoF=Cl 25S°C)}
Min.
–
–
SFoinrgcleappahcaitsive_PMeheelaoaala_kf_ndwfr,oa_edrv_cweetria,_fayr6t_dien0_gH_{ccuuzcrr,urrreer}e_rnnest_ti_nsb_ttyiv2e0o%f ind_Iu_IFc_OMtive load.
2^C2^a5^{pacitance between termi}m^naA^{ls CT}
–
Reverse recovery time
trr
–
100
mA
Typ. Max.
–
1.2
–
0.1
0.72 3.0
–
4
Unit
Conditions
V
I F=100mA
µA
VR=80V
pF
VR=0.5V , f=1MHz
ns
VR=6V , IF=10mA , RL=100 Ω
Surge cu^Rrr^Aen^Tt^IN(1^Gs^S)
I surge ^{SYMBOL FM1}5²⁰0^-0^{MH FM130-MH FM14}m⁰A^{-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
Marking CodeJunction temperature
Maximum Rec_Su_tr_ore_rn_at_gP_ee_ta_ek_mR_pe_ev_re_ar_ts_ue_reVoltage
Tj
O¹¹R²D²R⁵ING
13
INFORMATION
14°C
T_stg VRRM – 55²~⁰ +D1ev2ic5e ³⁰ Mark⁴in⁰°gC
15
16
50_Shipping 60
18
10
115 120
80
100
150
200 V
Maximum RMS Voltage
VRMS
1L41SS400GT12G1
3 28
430500/Tape&Re4el2
56
70
105
140 ^V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^V
Maximum A^Ev^Le^Era^Cg^Te^RF^Io^Cr^Awa^Lrd^CR^He^Ac^Rtif^Aie^Cd ^TC^Eur^Rre^ISnt^{TICS (Ta = 25}IO^°C)
Parameter
Symbol
Min.
Peak Forward S_Fu_or_rg_we _aC_ru_drr_ven_ot_lt8_a.3_gems single half sine-wave_{VF IFSM –}
superimposed o_Rn_er_va_ete_rd_seloa_cd_u(_rJ_rE_enD_tEC method)
IR
–
Typical Therm_Cal_aR_pe_as_ci_is_tt_aa_nn_cc_ee _b(N_eo_twte_e2_e)_{n terminals CT} RΘJA _–
Typical Junctio_Rn_eC_veap_rsa_ecit_ra_en_cc_oe_v(_eN_ryot_te_im1)_e
trr ^CJ
–
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Typ. Max.
–
1.2
–
0.1
0.72 3.0
–
4
-55 to +125
1.0
Unit
Conditions
V
I F=100m3A0
µA
VR=80V
pF
VR=0.5V ⁴, ⁰f=1MHz
ns
VR=6V ,I¹F²=⁰10mA , RL=100 Ω
-55 to +150
- 65 to +175
A
A
℃
1/3
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP