1SS400CST5G Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – SWITCHING Diodes

WILLAS
1SS400C^FS^MT¹5²G^0-M+
THRU
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SWITCHING Diodes
Features
SOD-123+ PACKAGE
LESHAN RADI^PO^bCO^FM^reP^eAN^PY^r,^oL^dT^uD^c. ^t
Package outlin^Se^OD-923
Switching diode ^{• Batch process design, excellent power dissipation offers}
• Applic^ba^ett^ti^eo^rn^res^{verse leakage current and thermal resistance.}
Hig^•h
Lo_sop_pwt_eimepir_dzoefsibl_weo_is_tacur_hdrfias_npcgeacmeo.
unted
applic
atio
n
in
order to
• Applications
• Feat^•u^Lr^oe^ws^{power loss, high efficiency.}
High speed switching
1) E^•x^Htrⁱe^gm^{h c}e^uly^rresⁿm^t a^call^ps^au^brⁱf^lia^tyc^,e^lom^wo^fou^rn^wt^ain^rdg^vt^oy^lp^tae^g.^{e d•rFoepa.tures}
• High surge capability.
2) H_•ig_Gh_uaS_rp_de_rine_gd._{for overvoltage protection.}
1) Extremely small surface mounting type.
2) High Speed.
SOD-123H
.030(0.75)
.033(0.85)
L1SS400GT1G
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.022(0.55)
1
.026(0.65)
3) H^•ig^Uh^ltrr^ae^hliⁱa^gb^hi^-l^sit^py^e. ^{ed switching.}
3) High reliability.
•
Con_••s_LStr_eiu^laicc_dot_-i^nfo_reen_{epiptaaxritasl}
planar chip, metal s
meet environmental
ilicon jun_•c_Cti_oo_nn_s._truction
standards_Sio_licf_{on epitaxial}
planar
SiliconMIeLp-SitaTxDi-a1l9p5l0a0na/2r28
Pb-^•F^RHre^oaHe_loSgp_epa_nrc^ofrdk_eua_ecg^tpfe_roordis^puaca^{ct kf}v_oina_rgi_pl_aca^ocb_kdl_iene_{gsucfofidxe"Gsu"ffix}
•
"H"
We declare that the material of product
compliance with RoHS requirements.
RoH_MS_ep_cro_hd_auc_nt _ifo_cr_ap_la_dck_ain_tg_acode suffix "G" _{• Device Marking}
Halogen free product for packing code suffix "LH1"SS400GT1G=3
.012(0.30)
• Epoxy : UL94-V0 rated flame retardant
.037(0.95)
.041(1.05)
0.071(1.8)
0.056(1.4)
2
SOD - 723
1
CATHODE
0.040(1.0)
0.024(0.6)
2
ANODE
Mar•kCinasge c: Modoled:ed3plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Terminals
:Plated
terminals,
solderable
per
,
MIL_AB-S_SOT_LD_UT-_E75_M0_AXIMUM
RATINGS
(Ta
=
Dimensions
25°C)
in
inches
and
(millimeters)
Method 2026
• Polarity : Indicated by cathode band
Parameter
Peak reverse voltage
DC reverse voltage
Symbol
VRM
VR
Limits
Unit
90
V
Dime₈n₀sions in inches _Vand (millimeters)
Maximu^• m^MoR^una^titⁿin^g g^Ps^osa^itin^od^{n :}E^Alⁿe^yctrical
• Weight : Approximated 0.011 gr
Peak forward current
I FM
Characteristi^Mc^es^an,
am
Surge
re_Sct_iif_nyin_gg _lc_eurre_Dnt_iode
current (1s)
I
I_@O _TA=25
surge
225
100
500
mA
mA
mA
Parameter
MAXIMUM
RATINGS
AND
ELECTRI^JSC^utonrcA^atigoL^{en ttee}C^mmpH^peerrA^aattuuR^rreeACTER^TTsI^jtgLSⁱT^mIC^itS^{s –}
125
55 ~ +125
°C
°C
Unit
PeRaaktingres vate2r5s℃e vamobltieangt etemperature unless otherVwi_Rs_Me specified.
90
Single phase half wave, 60Hz, resistive of inductive load.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Min.
Typ. Max.
Unit
V
Conditions
DCForrecavpearcsitievevlooaldt,adgeerate current by 20%
V_R
Forward voltage
VF80 –
–
1.2
V
V I F=100mA
Reverse current
IR
–
–
0.1
µA
VR=80V
RATINGS
P_Me_aa_rk_kinf_go_Cr_ow_deard current
I 225 mA ^{SYMBOL FCMa1p2a0ci-tManHceFbMe1tw3e0e-nMtHermFMina1l4s0-MCHT FM150-M– H FM01.6702-MH 3F.0M180-MpFH FMV11R=000.-5MVH, f=F1MM1H1z50-MH FM1200-MH U}
FM
Rev₁e₂rse recove₁ry₃time
14 ^trr 15 ^–
16^–
4 ₁₈ ns
V₁R₀=6V , IF=10mA₁,₁R₅L=100 Ω₁₂₀
M^Me^aa^xin^mur^mec^Rt^ei^cf^uy^rri^enⁿg^{t P}c^eau^kr^Rre^evn^et^{rse Voltage}
Maximum RMS Voltage
I^VRRM
V^ORMS
20
14
30
21
40 ₁₀5₀0
28
35
60
42
80
56
100 _mA 150
70
105
200 V
140 ^V
S^Mu^ar^xg^ime^umcu^Dr^Cre^Bln^oct^k(ⁱⁿ1^gs^V)^oltage
I 500 _su^V_rg^D_e^C
ORDR₂IN₀G INFORM₃A₀TION ₄₀
Device
Marking
50
60
Shipping
80
Maximum Average Forward Rectified Current
IO
L1SS400GT1G
3
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
T_j
IFSM
1.0
4000/Tape&Reel
125
30
S^st^uo^pr^ea^rimg^pe^ost^ee^d m^onp^rae^ter^da^lot^au^dr⁽e^{JEDEC method)}
Typical Thermal Resistance (Note 2)
T_stg
RΘJA
-55~+125
40
100 _mA 150
200 ^V
A
A
℃
Typical Junction Capacitance (Note 1)
CJ
120
P
Ele^Oc^petr^raic^tina^gl^TR^ema^pt^ein^rag^tus^re @^RanT^g_A^e=25
Storage Tempe_Pra_atu_rr_ae_mRa_en_tg_ee_r
TJ
TSTG
Symbol
-55 to +125
Min. Typ. Max.
Unit
-55 to +150
- 65 to +175
Conditions
CHARACTERISTICS
FMoarxwimaurmdFvorowaltrad gVoeltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120¹0^/-³MH U
V_{F VF}
0.50 ^1.2
V _0.70
I_F=₀1_.80₅0mA
0.9
0.92 V
Maximum Average Reverse Current at
R_Re_av_tee_dr_Ds_Ce_Bc_lou_ckr_ir_ne_g n_Vot _ltage
@T A=25℃
@T A=125℃
I_R ^IR
0.1 A
0.5
10
V_R=80V
m
C^Na^Op^TEa^Sc^:itance between terminals
C_T
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
R2e- Tvheerrmsael RreesicstoanvceeFrryomtiJmunection to Ambient
t_rr
3.0 pF
V_R=0.5V,f=1MHZ
4
ns V_R=6V,I_F=10mA,R_L=100
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.