1SS400 Datasheet, PDF (1/2 Pages) Rohm – Switching diode

WILLAS
66^F^M^120-M+
THRU _{LESHAN RADIO COMPANY, LTD.}
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
6:,7&+,1*'LRGHV
Features
Switch^SOin^D-g¹²d³_P⁺i_ao_c^Pd_k^A_ae^C_g^K_e^A_o^G_uS^E_tOliDne-523
Pb Free Product
• Applications
L1SS400GT1G
• Batch process design, excellent power dissip_Ha_igti_ho_sn_peo_eff_de_sr_ws_itching
•
Applic^ba^ett^ti^eo^rn^res^verse
le
akage
cur
ren
t
a
nd
the
rmal resistanc
• Features
e.
.051(1.30)
SOD-123H
Hig^•h^Los^opp^wte_ime^pird_zoefs^iblw^eoi^st_ac^urh_drfi^asn_pcg^{eacmeo. unted}
application
in
order to
1) Extremely
small
surface
.043(1.10)
mounting type.
1
•
Feat^•u^Lr^oe^ws^{power loss, high efficiency.}
1) E^•x^Htrⁱe^gm^{h c}e^uly^rresⁿm^t a^call^ps^au^brⁱf^lia^tyc^,e^lom^wo^fou^rn^wt^ain^rdg
• High surge capability.
2) High Speed.
3) High reliability.
v_to_yl_pt a_eg_. e_•d_Cr_oo_np_s._truction
0.146(3.7)
0.130(3.3)
2
0.012(0.3) Typ.
.028(0.70)
2) H_•ig_Gh_uaS_rp_de_rine_gd._{for overvoltage protection.}
Silicon epitaxial planar
SO.0D20-(702.530)
3) H^•ig^Uh^ltrr^ae^hliⁱa^gb^hi^-l^sit^py^e. ^{ed switching.}
• We declare that the material of product
•
Con_••s_LStr_eiu^laicc_dot_-i^nfo_reen_{epiptaaxritasl}
planar chip, metal s
meet environmental
ilicon jun^cc^ot^mio^pn^lia. ^{nce with}
standa• rDdesviocef Marking
RoHS
requirements.
SiliconMIeLp-SitaTxDi-a1l9p5l0a0na/2r28
L1SS400GT1G=3
• RoHS product for packing code suffix "G"
.067(1.70)
.059(1.50)
1
CATHODE
0.071(1.8)
0.056(1.4)
2
ANODE
ORDR^HIN^aG^logIN^enFO^frR^eeM^pA^rT^odIO^uN^{ct for packing code suffix "H"}
M_De_evc_ich_e anical _Md_aa_rkt_ina_g
Shipping_{ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)}
.006(0.15)MIN.
0.040(1.0)
1S^•S^E40^po0^x-T^yG^{: UL94-V0 ra}A^{ted flame reta}3^rd0^a00ⁿ/^tTape&Re^PPe^ael^{raakmreetveerrse} _voltage
Pb-^•F^Cre^ase^ep^: a^Mc^ok^lda^eg^de^pi^las^sa^tiv^c,a^Sil^Oa^Db^-le^123H
RoH^• S^Tep^rmroⁱⁿd^au^lsct^:Pfo^lar^tep^da^tc^ek^ri^mnⁱg^nac^lo^s,d^se^ols^du^ef^rf^aix^bl"^eG^p"^er
DC reverse voltage
MIL^P-^eS^akT^fD^orw-7^ar5^d 0^cu,rrent
Mean rectifying current
Symbol
Limits
Unit
0.024(0.6)
VRM
90
V
VR 0.031(0.8) Typ. 80
V
0.031(0.8) Typ.
I FM
225
mA
Dimensions in inches and (Millimeters)
IO
100
mA
Halogen free p^Mro^ed^thu^oc^dt ²fo⁰r²⁶packing code suffix "H^Su"^{rge current (1s)}
I surge
500
mA
• Polarity : Indicated by cathode band
Junction temperature
Tj
125
°C
Dimensions in inches and (millimeters)
Storage temperature
Tstg
– 55 ~ +125
°C
Maximu^• m^MoR^una^titⁿin^g g^Ps^osa^itin^od^{n :}E^Alⁿe^yctrical Characteristics, Single Diode @T_A=25
• Weight : Approximated 0.011 gram
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol ^Parameter
Symb_Lol _imitM_sin.
MAXIMUM RATINGS AND ELECTR^FoI^rwC^arA^d L^voltC^agH^e ARACTER^VIS^F TICS^–
Reverse current
IR
–
PeRaaktingres vate2r5s℃e vamobltieangt etemperature unless otherVwi_Rs_Me specCiafpieadcit.ance between terminals CT 90 –
Typ.
–
–
0.72
Max.
1.2
0.1
3.0
Unit
Co_Undi_ntio_in_ts
V
I F=100mA
µA
VR=80V
pF
V V_R=0.5V , f=1MHz
Single phase half wave, 60Hz, resistive of inductive load. ^{Reverse recovery time}
trr
–
–
4
ns
VR=6V , IF=10mA , RL=100 Ω
DCForrecavpearcsitievevlooaldt,adgeerate current by 20%
V_R
80
V
RATINGS
P_Me_aa_rk_kinf_go_Cr_ow_deard current
M^Me^aa^xin^mur^mec^Rt^ei^cf^uy^rri^enⁿg^{t P}c^eau^kr^Rre^evn^et^{rse Voltage}
Maximum RMS Voltage
I 225 mA ^{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U}
FM ^ORDRIN₁^G₂^INFORMA₁^TI₃^ON
14
15
16
18
10
115 120
Device
Marking
Shipping
I^VRRM
20
V^ORMS
L1SS400GT1G
14
30
3
21
40
100⁵⁰
60
4000/Tape&Reel
28
35
42
80
100 _mA 150
200 V
56
70
105
140 ^V
S^Mu^ar^xg^ime^umcu^Dr^Cre^Bln^oct^k(ⁱⁿ1^gs^V)^oltage
I_su^V_rg^D_e^C
20
30
40 ₅₀5₀0
60
80
100 _mA 150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
A
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
T_j
IFSM
125
30
A
S^st^uo^pr^ea^rimg^pe^ost^ee^d m^onp^rae^ter^da^lot^au^dr⁽e^{JEDEC method)}
T_stg
-55~+125
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Ele^Oc^petr^raic^tina^gl^TR^ema^pt^ein^rag^tus^re @^RanT^g_A^e=25
Storage Tempe_Pra_atu_rr_ae_mRa_en_tg_ee_r
CJ
TJ
TSTG
Symbol
-55 to +125
Min. Typ. Max.
Unit
120
-55 to +150
- 65 to +175
Conditions
P
1/3
CHARACTERISTICS
FMoarxwimaurmdFvorowaltrad gVoeltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V_{F VF}
0.50 ^1.2
V _0.70
I_F=₀1_.80₅0mA
0.9
0.92 V
Maximum Average Reverse Current at
R_Re_av_tee_dr_Ds_Ce_Bc_lou_ckr_ir_ne_g n_Vot _ltage
@T A=25℃
@T A=125℃
I_R ^IR
0.1 A
0.5
10
V_R=80V
m
C^Na^Op^TEa^Sc^:itance between terminals
C_T
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
R2e- Tvheerrmsael RreesicstoanvceeFrryomtiJmunection to Ambient
t_rr
3.0 pF
V_R=0.5V,f=1MHZ
4
ns V_R=6V,I_F=10mA,R_L=100
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.