1SS184 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

WILLAS
Ultra High Speed Switching
Application
1SS184
Featrues
Low forward voltage : V_{F (3)} = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
We declare that the material of product
compliance with RoHS requirements.
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Device Marking
1SS184 = B3
Maximum Ratings (T_A = 25°C)
Characteristic
Symbol
Maximum (peak) reverse voltage
VRM
Reverse voltage
VR
Maximum (peak) forward current
IFM
Average forward current
IO
Surge current (10ms)
IFSM
Power dissipation
P
Junction temperature
Tj
Storage temperature range
Tstg
* : Unit rating. Total rating = Unit rating × 0.7.
Rating
85
80
300 *
100 *
2*
150
125
-55~+125
Electrical Characteristics (T_A = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Forward voltage
Reverse current
Total capacitance
VF (1)
–
VF (2)
–
VF (3)
–
IR (1)
–
IR (2)
–
CT
–
IF = 1mA
–
IF = 10mA
–
IF = 100mA
–
VR = 30V
–
VR = 80V
–
VR = 0, f = 1MHz
–
Reverse recovery time
trr
–
IF = 10mA (Fig.1)
–
SOT –23
3
CATHODE
ANODE
1
2
ANODE
Unit
V
V
mA
mA
A
mW
°C
°C
Typ.
Max Unit
0.60
–
0.72
–
V
0.90
1.20
–
0.1
µA
–
0.5
0.9
3.0
pF
1.6
4.0
ns