1N914B Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

WILLAS
1N914B
SC
VO
0.1AMP Scho
1N914B SIGNAL DIODE _{Pb Free Product}
Absolute Maximum Ratings (Ta=25_°C)
FEATURES
S
Items
Symbol
Ratings
Unit
Dimensions (DO-35)
* Extremely Low VF
.01
Reverse Voltage
VR
75
V * Extremely thin package
Reverse Recovery trr
Time
Power Dissipation
P
3.33mW/_°C (25_°C)
4
500
ns * Low stored charge
* Majority carrier conduction
mW
1.02(26.0)
MIN.
.022(0.55)
.018(0.45)
Forward Current
IF
300 mA
Junction Temp.
Storage Temp.
Tj -65 to 175 _°C
.153(3.6)
Tstg -65 to 175 _°C _{MECHANICAL DATA} ^.132(3.0)
.059 (1.5)
.043 (1.1)
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
* Case:Molded plastic, JEDEC SOD-323(SC-76) .087(2.2)
.067(1.7)
* Terminal : Solder plated, solderable per MIL-STD-750,
Method 2026
1.02(26.0)
MIN.
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
Unit: inch (mm)
Marking
Electrical Characteristics (Ta=25_°C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150_°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_Ω
MAXIMUM^SyR^mA^boT^l ING AN^RaD^tinE^gsLECTRIC^UA^nitL CHARA
BV
V
Rating 25^oC ambient temperature unless otherwis₇e₅specified.
Single phase half wave, 60Hz, resistive of induct₁iv₀e ₀load.
For capacitive load, d_Ie_Fra_st_ue _rc_gur_erent by 20%
0.5
A
Parameter ^VF
Conditions ^V
Sym
Repetitive Peak Reverse Voltage
1.0
V
Continuous Reverse Volt^Ia^Rge
uA
V
Forward Voltage
I_F =
1⁰0^.m⁰A²D⁵C
5.0
V
I _F = 100₅m₀A DC
V
Reverse Current
Cj
V_R = 10V DC
pF
Mean Rectifying Current
4
Peak forward surge curre_tn_rt_r
ns
I_F
Capacitance between terminals
4
C
Operating Temperature
T
Storage Temperature
T_S
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