1N5221B Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Z-Diodes

WILLAS
1N5221B THRU 1N5267B
Silicon Z–Diodes
Unit: inch (mm)
Features
DO-35
D Plannar Die constuction
D 500mW Power Dissipation
D Ideally Suited for Automated Assembly Processes
D V_Z–tolerance ± 5%
Applications
Voltage stabilization
MECHANICAL DATA
Approx. Weight:
1.02(26.0)
MIN.
.022(0.55)
.018(0.45)
.153(3.6)
.132(3.0)
1.02(26.0)
MIN.
.087(2.2)
.067(1.7)
Absolute Maximum Ratings
T_j = 25_C
Parameter
Power dissipation
Z–current
Test ^Conditions
T_amb=25°C
Junction temperature
Storage temperature range
Type
Symbol Value Unit
P_TOT
500
mW
I_Z
P_V/V_Z
mA
T_j
175
°C
T_stg –65...+175 _°C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
l=9.5mm (3/8”), T_L=constant
Symbol
Value
Unit
R_thJA
300
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1.1 V
2010.06
WILLS ELECTRONIC CORP.