1N4448WS Datasheet, PDF (1/3 Pages) Won-Top Electronics – SURFACE MOUNT FAST SWITCHING DIODE

WILLAS
SOD-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
1N4448WS^THRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
FAST SWITCHING DIODE
FEATU_•R^F_BE^e_aS_t^a_ch^t
ures
process
design
,
excellent
po
wer
diss
ipa
tion
offers
Package outline
z Fas^bt ^eS^ttw^erit^rec^vh^ei^rn^sg^{e le}S^ap^ke^age^ed^{current and thermal resistance.}
• Low profile surface mounted application in order to
z SurfoapctiemiMzeobuoanrtdPspaacckea. ge Ideally Suited for Automatic Insertion
SOD^SO-3^D2^-13^23H
z Fo^•r^LG^owen^pe^owra^el^{r l}P^osu^sr^,p^ho^igs^he^efS^ficw^ieiⁿtc^cyh^. ing Applications
• High current capability, low forward voltage drop.
z Hig_• h_HigC_ho_sn_ud_rgu_ec_ct_aa_pn_ac_bie_lity.
z _{Pb•-FGrueaerdpriancgkfoargoeveisrvaolvtaagileapbrloetection.}
0.146(3.7)
0.130(3.3)
Ro^•H^US^ltrp^aro^hid^gu^hc^-st^pf^eo^er^dp^sa^wcⁱk^tcin^hg^ingc^.ode suffix ”G”
Ha^•lo^Sg^ile^icn^onfre^epe^itp^ar^xo^iad^lu^pc^latⁿf^ao^rr^cp^ha^ipc^,k^min^eg^tac^l o^sid^lie^cosⁿu^juffⁿix^ct“ⁱH^on”^.
• Lead-free parts meet environmental standards of
z Mois_Mt_Iu_Lr_-Se_TS_De_-1n₉s₅i₀ti₀v_/i₂t₂y₈Level 1
z Pol^•a^Rri^ot^Hy:^SC^pro^ol^do^ur ^cb^t a^fon^rd^pad^ce^knⁱⁿo^gte^cs^odc^ea^sth^uo^ffid^xe^"Ge^"nd
Halogen free product for packing code suffix "H"
MARKI_MNG_e:_cT_h5_{anical data}
Maxim•uEmpoRxyat: iUnLg9s4-aVn0 dratEedlefclatmriecraeltaCrdhaanrtacteristics, Single Diode @Ta=25℃
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Termin^Pa^als^ra:P^mla^et^te^ed^r terminals,
so
lderable^Syp^mer^bM^oI^lL
,
-STD-750
0.031(0.8) Typ.
Limit
0.031(0.8) Typ.
Unit
Non-Repetitive Pe^Mak^etR^hoe^dve²r⁰s²e⁶ Voltage
• Polarity : Indicated by cathode band
Peak R_•e_Mp_oe_uti_nti_tv_ine_gP_Pe_oa_sk_itiR_onev_: e_Ar_ns_ye Voltage
Workin_•g_WP_ee_iga_hk_t R_{: A}e_pv_pe_rr_os_xe_imV_ao_tl_eta_dg₀e_{.011 gram}
V_RM
V_RRM
V_RWM
100
V
Dimensions in inches and (millimeters)
75
V
DC Blocking Voltage
V_R
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RMS Reverse
Ratings at 25℃
Voltage
ambient temperature
unless
otherw^Vi^Rse^(RMsp^Se⁾ cified.
53
V
FSoinrgwleaprdhaCseonhatilfnwuaovues, 6C0uHrzr,ernestistive of inductive loIaFdM.
500
mA
For capacitive load, derate current by 20%
Average Rectified Output Current
RATINGS
M^Pa^er^aki^kng^FC^oo^rd^we^{ard Surge Current @t=1.0μs}
Maximum Recurrent Peak Reverse V_@olt_ta₌ge_1.0s
I_O
250
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
I_FSM
12
13
14
4₁.₅0
16
VRRM
20
30
40
1⁵.⁰5
60
18
10
A ¹¹⁵
120
80
100
150
200 Vol
M_Pa_ox_wim_eu_rm_DR_isM_sS_ipV_ao_tlt_ia_og_ne
V_PR_dMS
14
21
28
2³0⁵0
42
56
70 _mW105
140 ^Vol
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Vol
Thermal Resistance Junction to
Maximum Average Forward Rectified Current
Ambient
R^I_θ^O_JA
625
1.0
℃/W
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
s^Su^tp^oe^rri^am^gpo^ese^Td^eo^mn ^pra^ete^rd^al^to^ua^rd^e(JEDEC method)
T^IF_S^S_T^M_G
-55~+150
30
℃
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
E_Tl_ye_pc_ict_ar_l i_Jc_ua_ncl_tiR_ona_Ct_ain_pag_cis_tan@_ceT_(Na_o=_te2₁5₎℃
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperat^Pur^ae^raR^man^ege^ter
SymTSbToGl Min Typ Max Unit - 65 to +175 Conditions
℃
Reverse breakd_Co_Hw_An_RAvo_CTlt_Ea_Rg_Ie_STICS
V_SY(MBRB)OL
75 V
IR=10μA
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
R_Fa_ote_rwd D_aC_rdB_vlo_oc_lk_ti_ang_geVoltage
@T A=125℃
NOTES:
V_F^V₁^F
V_F^I₂^R
V_F3
0.62
0.50 _0.72
0.855
1.0
V^0.70
0.5
V
10
V
0_I._F8₌5_5mA
0.9
I_F=10mA
I_F=100mA
0.92 Vol
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VD_VC._F4
2- Thermal Resistance From Junction to Ambient
I_R1
Reverse current
I_R2
1.25
V
2.5
μA
25
nA
I_F=150mA
V_R=75V
V_R=20V
Capacitance between terminals
C_T
4
pF
V_R=0V,f=1MHz
Reverse recovery time
t_rr
2012-06
I_F=I_R=10mA
4
ns
WIL^IrrL⁼⁰A^.1S^XIE^R,RL^LE⁼¹C⁰T^0ΩRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.