1N4448W Datasheet, PDF (1/3 Pages) Transys Electronics – FAST SWITCHING SURFACE MOUNT DIODE

WILLAS
SOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
1N4448W^THRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
FAST SWITCHING DIODE
Features
Package outline
FEATUR^{• B}E^aS^{tch process design, excellent power dissipation offers}
SOD-123
z
Fas_• t_LbS_oewtw^tepi^rrt^roc^efh^vileein^rssg_uerlfS^eaap_ckee^ame^gd_{oeucnutrerdenatpapnlidc}
thermal resistanc
ation in order to
e.
z SurfoapctiemMizeobuonatrdPsapcackea.ge Ideally Suited for Automatic Insertion
SOD-123H
z
For^••
L_Go_ew_np_eo_rw_ae_lr _Pl o_us s_r,_ph_oi g_sh_ee_Sff i_wc i e_itn_cc_hy._ing
High current capability, low forward
Applications
voltage drop.
z Hig•hHiCghosnudrguecctaapnacbeility.
0.146(3.7)
0.130(3.3)
z _Pb-•_FG_ru_ea_erd_pr_ain_cg_kfo_ar_go_eve_isrvo_al_vta_ag_ie_lap_bro_letection.
RoH^{• U}S^ltp^raro^hd^igu^hc^-st^pf^eo^er^dp^sa^wcⁱk^tcin^hg^ingc^.ode suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Hal•oLgeeand-ffrreeee pparrotsdmuceteftoernvpiarocnkminegntcaol sdteansduafrfdixs o“Hf ”
z Mois^Mtu^ILr^-e^STS^De^-n¹s⁹i⁵t⁰iv⁰i^/t²y²⁸Level 1
z ^{Pol•arRitoyH: SCoplroordubcatnfdordpeancoktiensg ccaotdheodsueffeixn"dG"}
MARKIN^HG^al:^ogT^e5^{n f}&^reeA^p3^{roduct for packing code suffix "H"}
Mechanical data
Maxim^•u^Em^poR^xyat^: i^Un^Lg⁹s^4-a^Vn⁰ d^ratE^edle^fc^lat^mri^ec^ra^el^taC^rdh^aaⁿr^tacteristics, Single Diode @Ta=25℃
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
TerminPaalsra:Pmlaetteedr terminals,
solderabl
eSypmerbMoIlL
,
-STD-750
0.031(0.8) Typ.
Limit
0.031(0.8) Typ.
Unit
Method 2026
Non-Repetitive Peak Reverse Voltage
• Polarity : Indicated by cathode band
Peak R_•e_Mp_oe_uti_nti_tv_ine_gP_Pe_oa_sk_itiR_onev_: e_Ar_ns_ye Voltage
Workin_•g_WP_ee_iga_hk_{t :} R_Ape_pv_re_or_xs_ie_maV_to_el_dta₀g_.0e_{11 gram}
V_RM
V_RRM
V_RWM
100
V
Dimensions in inches and (millimeters)
75
V
DC Blocking Voltage
V_R
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R_RM_atS_ingR_se_av_t e₂r₅s_℃e V_ao_ml_bta_ieg_ne_{t temperature unless otherw}V_iR_se(RM_spS_e) _cified.
53
V
F^Soⁱⁿr^gw^lea^prd^haC^seon^hati^lfn^wu^ao^vu^es^{, 6}C⁰u^Hr^zr^,e^rn^est^{istive of inductive lo}I^aF^dM^.
500
mA
For capacitive load, derate current by 20%
Average Rectified Output Current
RATINGS
I_O
250
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
MPaerakikngFCoordweard Surge Current @t=1.0μs
Maximum Recurrent Peak Reverse V_@olt_ta₌ge_1.0s
V^IFR^SR^MM
12
20
13
30
14
4₁.₅0
16
40
1⁵.⁰5
60
18
80
10
100
A
115
150
120
200 Vol
Maximum RMS Voltage
Power Dissipation
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
Pd
500
VDC
20
30
40
50
60
56
70
105
140 ^Vol
80
mW
100
150
200 ^Vol
M^Ta^hx^eim^rmum^alA^Rve^er^saⁱg^se^taFoⁿr^cw^ear^Jd^uRⁿe^cc^ttiⁱf^oieⁿd C^tourrent
Ambient
Peak Forward Surge Current 8.3 ms single half sine-wave
sSutoperarigmepToesmedpoernartautreedalnodadJ(uJnEcDtiEoCn Tmeemthpoedr)ature
R^I_θ^O_JA
IFSM
T_STG/Tj
250
1.0
30
-55~+150
℃/W
Am
Am
℃
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
ETlyepcictarl iJcuancltiRonaCtainpagcistan@ceT(Nao=te215)℃
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage TemperatPuraeraRmanegeter
Sym^TSb^To^Gl Min Typ Max Unit ^{- 65 to +175} Conditions
℃
Reverse Breakd_Co_Hw_An_RAV_Co_Tlt_Ea_Rg_ISe_TICS
V_{S(YBMR)BROL FM12}7_0-5_{MH FM130-MH FM140-MH FM150-M}V_{H FM160-MH FM180-M}I_HR=_F1_M0₁₁μ₀A_{0-MH FM1150-MH FM1200-MH UN}
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Forward Voltage
@T A=125℃
NOTES:
V_F^V₁^F
V_F^I₂^R
V_F3
0.62
0.50 _0.72
0.855
1.0
V^0.70
0.5
V
10
V
0_I._F8₌5_5mA
0.9
I_F=10mA
I_F=100mA
0.92 Vol
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VD_VC._F4
2- Thermal Resistance From Junction to Ambient
1.25
V
I_F=150mA
Reverse Current
I_R1
2.5
μA
V_R=75V
I_R2
25
nA
V_R=20V
Capacitance Between Terminals
C_T
Reverse Recovery Time
t_rr
2012-06
4
pF
V_R=0V,f=1MHz
I_F=I_R=10mA
4
ns
WIL^IrrL⁼⁰A^.1S^XIE^R,RL^LE⁼¹C⁰T^0ΩRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.