1N4448 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

WILLAS
1N4448
SCS
VOL
0.1AMP Schot
1N4448 SIGNAL DIODE _{Pb Free Product}
FEATURES
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol
Ratings
U*nEixt tremely
Low
Dimensions
VF
(DO-35)
Reverse Voltage
VR
Reverse Recovery trr
Time
Power Dissipation
P
75
4
500
*^VExtremely thin package
*ⁿL^sow stored charge
* Majority carrier conduction
mW
1.02(26.0)
MIN.
.022(0.55)
.018(0.45)
3.33mW/_°C (25_°C)
Forward Current
IF
500 mA
Junction Temp.
Storage Temp.
Mechanical Data
Tj
Tstg
-65 to 175
-65 to 175
°^C
.153(3.6)
°^C
.132(3.0)
MECHANICAL DATA
* Case:Molded plastic, JEDEC SOD-323(SC-76)
.087(2.2)
.067(1.7)
.059 (1.5)
.043 (1.1)
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
* Terminal : Solder plated, soldera1b.l0e2p(2e6r.M0)IL-STD-750,
MIN.
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
SO
.012
C
* Weight : 0.000159 ounce, 0.0045 gram
Marking C
Electrical Characteristics (Ta=25_°C)
Ratings
Symbol
Ratings
Unit
Minimum Breakdown Voltage
BV
V
IR= 5.0uA
IR= 100uA
MAXIMUM RATING AND75ELECTRICAL CHARA
100
Peak Forward Surge Current PW= 1sec. Rating 25^oC ambient temIFpesruartugree unless otherwis1e.0specified.
A
Maximum Forward Voltage
Single phase half wave, 60H_Vz_F, resistive of inductive load.
V
IF= 100mA
For capacitive load, derate current by 20%
1.0
Maximum Reverse Current
VR= 20V
IR
Parameter
0.025
uA
Conditions
Symb
VR= 75V
Repetitive Peak Reverse Voltage
5.0
V_RM
VR= 20V, Tj= 150_°C
Continuous Reverse Voltage
50
V_R
Maximum Junction Capacitance
Cj
I _F = 10mA DC
pF
VR= 0, f= 1 MHz
Forward Voltage
4
VF
Maximum Reverse Recovery Time
trr
I _F = 100mA DC
ns
V F2
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_Ω^{Reverse Current}
V_R = 10V₄DC
I_R
Mean Rectifying Current
IO
Peak forward surge current
I_FSM
Capacitance between terminals
CT
Operating Temperature
Storage Temperature
T_J
T_STG
WILLAS ELECTRONIC CORP.