1N4151 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

WILLAS
1N4151
SCS
VOL
0.1AMP Scho
1N4151 SIGNAL DIODE _{Pb Free Product}
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings
Reverse Voltage
VR
50
Reverse Recovery trr
2
Time
Power Dissipation
P
500
FEATURES
U_*n_Eit_xtremely
Low
Dimensions
VF
(DO-35)
V
* Extremely thin package
ns
* Low stored charge
1.02(26.0)
m^*W^{Majority carrier conduction}
MIN.
.022(0.55)
.018(0.45)
3.33mW/_°C (25_°C)
Forward Current
IF
300 mA
Junction Temp.
Storage Temp.
Tj -65 to 175
Tstg -65 to 175
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
°^C
.153(3.6)
°^C
.132(3.0)
MECHANICAL DATA
.087(2.2)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
* Terminal : Solder plated, solderab¹l^.e⁰²p_M⁽e²_Ir_N⁶M_.^.0I⁾L-STD-750,
Method 2026
.059 (1.5)
.043 (1.1)
Lead/Finish Double stud/Solder Plating
* Polarity : Indicated by cathode band
Chip
Glass Passivated
* Mounting Position : Any
Dime nsions in mi llime ters
SO
.012
C
* Weight : 0.000159 ounce, 0.0045 gram
Electrical Characteristics (Ta=25_°C)
Ratings
Symbol
Ratings
Unit
Marking C
Breakdown Voltage
BV
V
IR= 5.0uA
Peak Forward Surge Current PW= 1sec.
MAXIMUM _IR_FsA_urgT_eING AN₁D^7.50 ELECTRI_ACAL CHARA
Maximum Forward Voltage
IF= 50mA
Maximum Reverse Current
VR= 50V
Rating 25^oC ambient temp^Ver^Fature unless otherwise specified.
V
Single phase half wave, 60Hz, resistive of induct¹iv^.e⁰load.
For capacitive load, derate^Ic^Rurrent by 20%
uA
0.050
VR= 20V, Tj= 150_°C
Parameter
50
Conditions
Sym
Maximum Junction Capacitance
Repetitive Peak Reverse V^Col^jtage
pF
V_R
VR= 0, f= 1 MHz
Continuous Reverse Voltage
2
Max Reverse Recovery Time
trr
ns
V_R
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_{ΩForward Voltage}
I _F = 10m₂A DC
VF
I _F = 100mA DC
VF
Reverse Current
V_R = 10V DC
I_R
Mean Rectifying Current
IO
Peak forward surge current
I_FS
Capacitance between terminals
CT
Operating Temperature
T_J
Storage Temperature
T_ST
WILLAS ELECTRONIC CORP.