1N4150 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes"

WILLAS
1N4150
SC
VO
0.1AMP Sch
1N4150 SIGNAL DIODE
Pb Free Product
Absolute Maximum Ratings (Ta=25°C)
FEATU_DR_imE_enS_{sions (DO-35)}
Items
Symbol Ratings Unit
* Extremely Low VF
.0
Reverse Voltage
VR
Reverse Recovery trr
50
V
4
ns ^{* Extremely thin package}
.022(0.55)
.018(0.45)
T im e
* Low stored charge
1.02(26.0)
Power Dissipation
P
500
MIN.
mW ^{* Majority carrier conduction}
3.33mW /°C (25°C)
Forward Current
IF
200
mA
Junction Temp.
Storage Temp.
Tj -65 to 200 °C
Tstg -65 to 200 °C
.153(3.6)
.132(3.0)
.059 (1.5)
Mechanical Data
Item s
Materials
Package
DO-35
MECHANICAL DATA
.087(2.2)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
1.02(26.0)
* Terminal : Solder plated, soldera^Mb^INle^. per MIL-STD-750,
.043 (1.1)
Case
Lead/Finish
Chip
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW = 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
* Weight : 0.000159 ounce, 0.0045 gram
Markin
Symbol
Ratings
Unit
BV
V
50
MAXIMUM^IFsR^urgA^eTING AN¹D^.0 ELECTRIC^A AL CHAR
VF
V
Rating 25^oC ambient temperature unless otherw₁i_.s₀e specified.
Single phase half wave_I,_R60Hz, resistive of inductive load.
uA
For capacitive load, derate current by 20% _0.10
100
Parameter_{C j}
Conditions _pF
Sy
Repetitive Peak Reverse Voltage
2.5
Continuous Reverse Vo^tl^rta^r ge
ns
Forward Voltage
I _F = 10⁴mA DC
I _F = 100mA DC
Reverse Current
V_R = 10V DC
Mean Rectifying Current
Peak forward surge current
Capacitance between terminals
Operating Temperature
Storage Temperature
T
WILLAS ELECTRONIC CORP.