1N4148WS Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

WILLAS
SOD-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
1N4148^FW^M_TS¹_H²_R⁰_U^-M+
BAV16_FW_MS_1200-M+
Pb Free Product
Features
Package outline
FAST S^•W^BI^aT^tcC^hH^pI^rN^ocG^esD^{s d}IO^esD^igE^{n, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
FEATUR• ELoSw profile surface mounted application in order to
SOD^SO-3^D2^-13^23H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Pb-Fre^•e^Sip^lica^ocⁿk^ea^pig^tae^xiais^{l p}a^lav^naa^ril^ca^hib^pl^,e^{metal silicon junction.}
• Lead-free parts meet environmental standards of
RoHS p^Mro^ILd^-u^Sc^TDt ^-f¹o⁹r⁵p⁰⁰ac^/2k²i⁸ng code suffix ”G”
Haloge^•n^RHoaf^Hr_loe^Sge_epnrp^ofrdr_euo_ecd^tpfu_roorc_dput^acf^cto^kfor^inrgp_paca^occ_kdik^eni_gsn^ucg^fofidxc_e"o^Gsd_u"fe_fix s_"Hu_"ffix “H”
MoistuMreeScehnsaintivicityalLdevaetla1
Polarity_• :_EC_poo_xl_yo_:r_Ub_La₉n₄d_-Vd₀e_ran_to_et_de_fs_lac_ma_eth_reo_tad_re_dae_nn_t d
MARK•INCGas:eB: AMoVld1e6dWplSas=tTic6, S, O1ND-411243H8WS=T4
0.031(0.8) Typ.
Maxim•uTmermRianatilns g:PslaatenddteErmleincatlrsi,csaolldCerhabalreapcetreMriIsL-tSicTsD,-7S5i0n^,gle Diode @Ta=25℃
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : IPnadricaamteedtebry cathode band
Symbol
DLimimenistions in inches and (millimeters) Unit
Non-R^•ep^Me^ot^uitⁿiv^tie^ngP^Pe^oa^sk^itR^ioeⁿv^:e^Arⁿs^ye Voltage
• Weight : Approximated 0.011 gram
Peak Repetitive Peak Reverse Voltage
V_RM
V_RRM
100
V
Working Peak^MR^Ae^Xve^IMrs^Ue^MVo^Rlta^Ag^Te^{INGS AND ELECT}V^RR^IW^CM^{AL CHARACTERISTICS} 100
V
D^RaC^tinB^gl^soc^atk²in^5℃ g V^ao^mlt^ba^iegⁿe^{t temperature unless otherwise spec}V^ifiR^ed.
Single phase half wave, 60Hz, resistive of inductive load.
R_FoM_r S_caR_pae_cv_ite_ivr_ese_loaV_do_,l_dta_eg_rae_{te current by 20%}
V_R(RMS)
71
V
Forward Continuou^Rs^ATC^INu^Grr^Sent
Marking Code
M^Aa^vx^eim^raum^geR^Rec^eu^crr^teⁱn^fit^eP^dea^Ok^uR^te^pv^uer^ts^Ce ^uVo^rrlt^eaⁿge^t
MPaexaimkuFmoRrwMSarVdolStaugerge Current @t=1.0μs
Maximum DC Blocking Voltage
@ t=1.0s
M_Pa_ox_wim_eu_rm_DA_iv_se_sra_ipg_ae_tF_ioor_nward Rectified Current
SYMBOL _IF_FM_M120-MH FM130-MH FM140-MH FM150-M₃H₀F₀M160-MH FM180-MH FM1100-MH FM_m1_A150-MH FM1200-MH UN
12
13
14
15
16
VRRM ^IO 20
30
40
50 ¹⁵⁰ 60
18
10
115 120
80
100
m₁A₅₀
200 Volt
VRMS
14
21
28
35 2.0 42
VDC ^IFSM20
30
40
50 _1.0 60
56
70
105
140 ^Volt
80
100
A
150
200 ^Volt
IO _Pd
200 ^1.0
mW
Am
P_Te_hak_erF_morw_aa_lr_Rd S_eu_sr_ig_se_taC_nur_cre_ent_J8_u.3_nm_cs_tis_oin_ngle_toha_Alf_msin_be_i-_ew_nav_te
superimposed on rated load (JEDEC method)
TJyupniccaltiTohnermTealmRpeseisrtaatnucree(Note 2)
Typical Junction Capacitance (Note 1)
O^Sp^te^or^ra^ati^gng^eT^Te^em^mpe^pra^et^ru^are^tuR^ra^enge
ESlteorcatgreicTeamlpRerattuirne gRsang@e Ta=25℃
IFSM _RθJA
RΘJA
CJ
TJ
TSTG
T_j
T_STG
-55 to +125
625 ³⁰
150 40
120
-55~+150
- 65 to +175
℃/W
℃
-55 to +150 ^℃
Am
℃/W
PF
℃
℃
PaCrHaAmReAtCeTrERISTICS
Sy^Sm^YMb^Bo^Ol^{L FM12}M^0-i^Mn^{H FM1}T³⁰y^-p^{MH FM14}M^0-a^Mx^{H FM1}U⁵⁰n^-Mit^{H FM160-MH FM180-}C^Mo^H n^FMd¹it¹i⁰o⁰n^-Ms^{H FM1150-MH FM1200-MH UNI}
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @T A=25℃
V_F1
IR
Rated DC Blocking Voltage
@T A=125℃ _VF2
Forward voltage
NOTES:
V_F3
0.50
0.715
0.855
1.0
0.70
V
0.5
V
10
V
0.85
0.9
I_F=1mA
I_F=10mA
I_F=50mA
0.92 Volt
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
V_F4
1.25
V
I_F=150mA
Reverse current
I_R1
1
μA
V_R=75V
I_R2
25
nA
V_R=20V
Capacitance between terminals
C_T
Re₂v₀e₁rs₂e_-r₀e₆covery time
t_rr
2
pF
4 ns
V_R=0V,f=1MHz
I_F=I_R=10mA
WILIrrL=A0.1SXIER,LRLE=C10T0ΩRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.