1N4148M Datasheet, PDF (1/2 Pages) Semtech Corporation – SILICON EPITAXIAL PLANAR DIODE

WILLAS
FM120-M
THRU
150mA SMALL
1.0A SURFACE
SIGNAL SWITCHING DIODE - 100V
MOUNT SCHOTTK_DY _OBA_-3R₄RI_PER_ACR_KEC_AT_GIF_EIERS
-20V-
1N4148M
200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
VOLTAGE^{• Low p}1^o0^w0^erV^loo^slt^ss^{, high e}P^ffO^icW^ieE^ncR^y. 500 mWatts
• High current capability, low forward voltage drop.
FEATUR_•E_HS_{igh surge capability.}
DO-34
• Fast sw^•itc^Ghi^un^ag^rdS^rpⁱⁿe^ged^f.^{or overvoltage protection.}
• Electrica^•lly^Ul^ld^te^rant^hicⁱa^gl^ht^-o^sS^pt^ea^en^dde^sr^wd ⁱJ^tcE^hDⁱE^ngC^.
• High Con^• d^Suⁱc^lit^ca^onⁿce^{epitaxial planar chip, metal silicon junction.}
• Lead-free parts meet environmental standards of
• Axial lead _MPa_ILck_-Sag_Te_Dl_-d₁e₉a₅lly₀₀Su_/2it₂e₈d for Automatic lnsertion.
• Both nor_•m_Ra_ol _Han_Sd_pP_rob_df_ure_cte_fop_ro_pd_au_cc_kt_ina_gre_coa_dv_eail_sa_ub_fl_fe_ix:_"G"
Normal : 8H0a~lo9g5e%n Sfrne,e5p~r2o0d%uctPfbor packing code suffix "H"
Pb freeM: 98e.5c%hSannabiocvae l data
• Epoxy : UL94-V0 rated flame retardant
MECHA_•N_CIC_asA_eL_:D_MA_oT_ldA_{ed plastic, SOD-123H}
•
Case:
Mo_•ld_Te_ed_rmG_inla_as_ls_sD_:PO_l-_a3_t4_ed
terminals,
solderable
per
MIL-S
,
TD-750
Package outline
SOD-123H
0.146(_U3._n7_i)_{t: inch (mm)}
0.130(3.3)
0.012(0.3) Typ.
.018(0.45)
.014(0.35)
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Terminals: SolderableMpeetrhMoIdL2-S0T2D6-202E, Method 208
• Polarity:^•S^Pe^oe^laD^ria^itg^yr^:a^Im^ndB^ice^alo^tew^{d by cathode band}
Dimensions in inches and (millimeters)
.087(2.20)
• Approx. ^•W^Mei^og^uhⁿt:^ti0ⁿ.^g09^Pog^sra^itm^ios^{n : Any}
.067(1.70)
• Mounting^• P^Wo^esⁱi^gti^ho^tn^:: ^AA^pn^py^{roximated 0.011 gram}
• Pb-Free package is available
RoHS product for ^Mpa^Ack^Xin^Ig^Mc^Uod^Me s^Ru^Affi^Tx ^I”^NG”^{GS AND ELECTRICAL CHARACTERISTICS}
Ha^Rlo^ag^tine^gn^sfr^ae^te²p⁵r^℃odu^ac^mt f^bo^ier ⁿp^ta^tc^ek^min^pg^ec^rao^td^ue^res^uuⁿffi^lx^es“^sH^o” ^{therwise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Dimensions in inches and (millimeters)
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
MA^MX^aI^xM^imU^umM^DR^C A^BlT^ocIN^kinG^gS^VoA^ltaN^geD
ELECTRICAL
CHA^VR^DCACTE²R⁰ISTIC³S⁰(TJ
40
=25°C
50
60
unless otherwise noted)
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forwar^Pd^AS^Ru^Arg^Me ^ECu^Tr^Ere^Rnt 8.3 ms single half sine-wave
ReverssuepVeorilmtapgoesed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Peak Reverse Voltage
Typical Junction Capacitance (Note 1)
RM S V_Oo_plt_ea_rg_ae_{ting Temperature Range}
M axim^Su^tm^orA^agve^era^Tg^ee^mF^po^er^rw^aa^turd^reC^Rur^areⁿn^gt^eatTa=25^O C And f> 50Hz
SYM BO L
IFSM
VR
RΘJA
VRM
CJ
TJ^{V RM S}
TSTG_{IA V}
-55 to +125
1N4148M
30
67
40
90
120
45
130
- 65 to +175
U N ITS
V
V
-55 to +150V
mA
Surge Forward C urrentatt<_CH1s_Aa_Rn_Ad_CT_Tj=_E2_R5_IS^O_TC_ICS
SYMB^IFO^SL^M FM120-MH FM130-MH FM140-MH FM1⁵5⁰0⁰-MH FM160-MH FM180-MH FM1100-M^mH^AFM1150-MH FM1200-
Powe^MrD^ai^xsⁱs^mip^ua^mtio^Fn^oa^rt^wT^aa^rm^db^V=^o2^lt5^agOeC^{at 1.0A DC}
VF_{P TO T}
0.50
500 ^0.70
0.85
m W ^0.9
0.92
Maximum Average Reverse Current at @T A=25℃
M axim_Ru_am_teF_do_Drw_Car_Bd_lV_oco_klta_ing_ge_Va_ot_lI_Fta=_g1_e0m A
@T A=125℃
IR _VF
M axim um Leakage C urrent
atV_R =_N2_O0_TV_ES:
atV =75V
IR
R
atV _R
=¹2^- 0^MV^ea,T^sJ^u=^re1^d50^atO1C^MHZ
and
applied
reverse
voltage
of
4.0
VDC.
M axim^2-um^ThC^era^mp^aa^lc^Rita^en^sc^ise^ta(N^nco^ete^F1^ro)^{m Junction to Ambient}
CJ
0.5
1.0
10
V
nA
25
µA
5
µA
50
4
pF
M axim um Reverse Recovery Tim e (Note 2)
TR R
4
ns
M axim um Therm alResistance
Junction Tem perature and Storage Tem perature Range
NOTE:
1. CJ at2V0R=102, f-=01M6HZ
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
2012-1
R θJA
TJ,TS
350
-55 to +150
O _{C /W}
O_C
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.