1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

WILLAS
1N4148
SCS5
VOLT
0.1AMP Schottk
1N4148 SIGNAL DIODE
Pb Free Product
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings
Reverse Voltage
VR
75
Reverse Recovery trr
4
FEATURES
Unit
Dimensions (DO-35)
*_VExtremely Low VF
*_nE_sxtremely thin package
.022(0.55)
.018(0.45)
Time
Power Dissipation
P
500
* Low stored charge
m* MWajority carrier conduction
1.02(26.0)
MIN.
3.33mW/_°C (25_°C)
Forward Current
IF
300 mA
Junction Temp.
Storage Temp.
Tj -65 to 175 _°C
Tstg -65 to 175 _°C
.153(3.6)
.132(3.0)
.059 (1.5)
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
MECHANICAL DATA
* Case:Molded plastic, JEDEC SOD-323(SC-76)
.087(2.2)
.067(1.7)
* Terminal : Solder plated, solderab¹l^.e⁰p²⁽e²r⁶M^.0I⁾L-STD-750,
MIN.
Method 2026
.043 (1.1)
Lead/Finish Double stud/Solder Plating
* Polarity : Indicated by cathode band
Chip
Glass Passivated
* Mounting Position : Any
Dimensions in millimeters
SOD-
.012 (0.
Cat
* Weight : 0.000159 ounce, 0.0045 gram
Marking Cod
Electrical Characteristics (Ta=25_°C)
Ratings
Symbol
Ratings
Unit
Minimum Breakdown Voltage
BV
V
IR= 5.0uA
IR= 100uA
MAXIMUM RATING AND75ELECTRICAL CHARAC
100
Peak Forward Surge Current PW= 1sec. Rating 25^oC ambient temIpFesrautrugreeunless otherwise1.s0pecified.
A
Maximum Forward Voltage
Single phase half wave, 60H_Vz_F, resistive of inductive load.
V
IF= 10mA
For capacitive load, derate current by 20%
1.0
Maximum Reverse Current
VR= 20V
IR
Parameter
uA
0.025 ^Conditions
Symbol
VR= 75V
Repetitive Peak Reverse Voltage
5.0
V_RM
VR= 20V, Tj= 150_°C
Continuous Reverse Voltage
50
V_R
Maximum Junction Capacitance
Cj
I _F = 10mA DC
pF
VR= 0, f= 1 MHz
Forward Voltage
I _F = 100m⁴A DC
VF1
V F2
Maximum Reverse Recovery Time
Reverse Current
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_Ω
trr
V_R = 10V ₄DC
ns
Mean Rectifying Current
I_R
IO
Peak forward surge current
I_FSM
Capacitance between terminals
CT
Operating Temperature
Storage Temperature
T_J
T_STG
WILLAS ELECTRONIC CORP.