1H1 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 1.0A MINIATURE HIGH EFFICIENCY RECTIFIER

WILLAS ^FM12
FM120 ^{$03+,*+()),&,(1&<5(&7,),(5WR9ROWV}
+7+58+
1.0A SURFACE MOUNT SCHOTTKY BARRIER5RECPTAICFIKEARGSE-20V- 200V
THR
SOD-123+ PACKAGE
Pb Free
Features
•^FB^Ea^At^Tc^Uh^Rp^Ero^Scess design, excellent power dissipation offers
* _bLo_ew_ttep_ro_rw_ee_vr_el_ro_ss_es,_leh_aig_kh_age_effi_cci_ue_rn_rc_ey_{nt and thermal resistance.}
•^* L^Lo^oww ^lp^er^ao^kf^ai^gle^e surface mounted application in order to
* _oLo_pw_timfo_ir_zw_ea_brd_oavo_rdlta_sg_pe_ace.
•^* L^Ho^igw^h p^co^uw^rreeⁿr^tlo^cs^as^p,^abhⁱi^lg^ith^y efficiency.
• ^**
High
H_Hi_igg_hh
speed switching
s^cu^ur^rg^re^enc^ta^cp^aab^pi^ali^bty^ility,
low
forward
voltage
drop.
•_* H_Hi_ig_ghh _rs_eu_lir_ag_be_ilc_ita_y pability.
• Guardring for overvoltage protection.
•^MU^Elt^Cra^Hh^Aig^Nh^I-^Csp^Ae^Led^Ds^Aw^Ti^Atching.
• ^**
Case: Molded plastic
S_Ei_pl_oic_xo_yn_{: U}e_Lpi₉ta_4Vxi_-a_Ol _rp_al_ta_en_fa_lar_mc_ehi_rp_e,_tam_rde_ata_ntl
silicon
junction.
•_* L_Le_eaa_dd_:-_Mfre_ILe_-Sp_Ta_Drt_-s₂₀m₂e_Ee_mt _ee_tn_hv_oi_dro₂n₀m_8Cen_gt_ua_al_ras_nta_ten_ed_dards of
* ^MMo^ILu^-n^Sti^Tng^Dp^-1o⁹si⁵ti⁰on⁰:^/A²n²y⁸
•_* R_Wo_eH_igS_htp_:r₀o_.d₁u₂c_gt _rfo_ar_mpacking code suffix "G"
* ^HP^ab^l-^oF^gre^eeⁿp^fa^rec^eka^pg^re^oi^ds^ua^cv^ta^fi^ola^rb^ple^{acking code suffix "H"}
M^Re^oHc^Sh^pra^odn^uci^t c^fora^pl^acd^kina^{g c}t^oa^{de suffix "G"}
Halogen free product for packing code suffix "H"
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
R-1
0.146(3.7)
0.130(3.3)
.025(0.64)
.021(0.53)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.126(3.20)
.106(2.70)
.102(2.60)
.091(2.30)
0.040(1.0)
0.024(0.6)
•_MC_Aa_Xs_IMe_U:_MM_Ro_Ald_Te_INd_Gp_Sla_As_Nti_Dc,_ES_LO_ECD_T-_R12_IC3_AH_{L CHARACTERISTICS}
•^RaT^teⁱⁿr^gm^{s a}in^{t 2}a⁵ls^oC:P^amla^bt^ieeⁿd^{t t}t^ee^mr^pm^eri^an^tua^rl^es^u, ⁿs^leo^sl^sd^oe^thra^erb^wlⁱe^sep^se^per^cM^ifieIL^d.-STD-750,
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive lo^Mad^e,^thde^or^date²⁰cu²r⁶rent by 20%.
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimension^Ds^imin ^einⁿc^shⁱe^os^nsanⁱⁿd (ⁱⁿm^cil^hlim^eset^aerⁿs^d) ^{(millimeters)}
• Mounting Position : Any
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
• Weight : Approximated 0.011 gram
RATINGS
SYMBOL 1H1 1H2 1H3 1H4 1H5 1H5P 1H6 1H7 1H8 UNITS
Maximum
Maximum
Recurrent Peak Reverse Voltage
RM^MS V^Aol^Xtag^Ie^{MUM RATINGS}
AND
ELECTRI^VVC^RRRMA^MS L
CH⁵³A⁰⁵ RA¹⁷⁰C₀₀ TE²¹⁰⁴R⁰⁰ IS³²T⁰¹⁰⁰ICS⁴²⁰⁸⁰⁰
400
280
600
420
800 1000 Volts
560 700 Volts
Rating^Ms^axa^imt ^u2^m5℃^{DC B}a^lom^ckbⁱⁿie^g n^Vt^olt^te^agm^e perature unless otherwise specifie^Vd^DC.
50 100 200 300 400 400 600 800 1000 Volts
Single_a^M_tp^a_T^xh_A^ima₌s^u₅^me₀^Ah_oCva^el^rf^agw^ea^Fv^oe^rw,^a6^rd0H^Rez^c,^tifrⁱe^edsi^Cs^ut^ri^rv^ee^nt of inductive load.
IO
1.0
Amps
For ca_Pp_ea_akci_Ft_oiv_rwe_al_ro_d a_Sd_ur,_gede_Cr_ua_rrt_ee_ntc₈u_.3rr_me_sn_st_inb_gy_le 2_ha0_lf%_sine-wave
superimposed on rated load (JEDEC method)
IFSM
25
Amps
Typical Junction Capa^Rci^Ata^Tnc^Ie^N(^GNo^Ste 2)
SYMBOL FM_C1_J20-MH FM130-MH FM140₂-₀MH FM150-MH FM160-MH FM₁1₅80-MH FM1_p1_F00-MH FM1150-MH
MarkingOpCeroadtineg and Storage Temperature Range
TJ, T1S2TG
13
14
-5155to + 150 16
18
1⁰ C0
115
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
Maxim^Eu^LEm^CTR^RM^ICS^ALV^Co^Hlt^Aa^Rg^Ae^{CTERISTICS (At TA = 25oC unless otherwise}V^noR^teM^dS⁾
14
21
28
35
42
56
70
105
Maximum DC Blocking Vo^Clt^Ha^Ag^Re^ACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
MaximuMmaxiAmvuemraDgCeRFeoverrwsearCdurRreenct tified Current
at Rated DC Blocking Voltage TA = 25^oC
VDC
IO
Peak Fo^Mr^aw^xa^imrd^umSu^Fr^ug^lle^LoC^au^drr^Re^en^vt^er8^s.^e3^Cm^us^rresⁿin^t gle half sine-wave
Average, Full Cycle .375” (9.5mm) lead length at TL = 55^oC
superim_Mp_ao_xs_imed_umon_Rera_vete_rsd_elo_Ra_ed_co(_vJ_eE_ryD_TE_imC_em_(Ne_oth_teo₁d₎)
IFSM
TypicaNlOTThESer:m1a.lTReset Csoisntdaitinocnse: I(FN=o0t.e5A2, I)R = 1.0A, IRR = 0.25A
RΘJA
Typical Junctio²n^{. M}C^eaa^sp^ura^ec^di^ata^{t 1}nc^Me^HZ(^aNⁿo^dt^ae^pp1^lie)^{d reverse voltage of 4.0 volt}C^s J
Operating Temperature Range
TJ
SYM₂B₀OL
VF
IR
trr
1H₃1₀ 1H2 1₄H₀3
1.0
1H4 ₅₀1H5
1.3
5.0
150
50
-55 to +125
1H5₆P₀ 1H6
1.0
1.0
30
40
120
1H₈7₀ 1H8 U₁N₀IT₀S
1.70
Volts
uAmps
uAmps
75
nSec
-55 to +150
150
Storage Temperature Range
2012-10
TSTG
- 65 to +175
WILLAS ELECTRONIC CORP.
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
VF
0.50
0.70
0.85
0.9