AO4485 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4485
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS= 15V
I_D= -10A
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
Q_g (nC)
Figure 7: Gate-Charge Characteristics
4000
3500
3000
2500
2000
1500
1000
500
0
0
C_iss
C_rss
C_oss
10
20
30
40
-V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10µs
10
100µs
1
0.1
0.01
R_DS(ON)
limited
T_J(Max)=150°C
T_A=25°C
0.1
1
1ms
10ms
100ms
10s
DC
I_F=-6₁₀.5A, dI/dt=10₁0₀A₀/µs
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1000
100
T_J(Max)=150°C
T_A=25°C
10
1
0.0001
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R_θJA=75°C/W
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DPOD ES NOT ASSUME ANY LIABILITY ARISING
OUT OF SU0C.0H1APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHSOinUgTleNPOuTlsIeCE.
T_on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
1000
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